NL6501946A - - Google Patents

Info

Publication number
NL6501946A
NL6501946A NL6501946A NL6501946A NL6501946A NL 6501946 A NL6501946 A NL 6501946A NL 6501946 A NL6501946 A NL 6501946A NL 6501946 A NL6501946 A NL 6501946A NL 6501946 A NL6501946 A NL 6501946A
Authority
NL
Netherlands
Application number
NL6501946A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6501946A priority Critical patent/NL6501946A/xx
Priority to US524925A priority patent/US3436620A/en
Priority to CH200766A priority patent/CH444974A/de
Priority to DE19661564383 priority patent/DE1564383A1/de
Priority to GB6385/66A priority patent/GB1135632A/en
Priority to AT132066A priority patent/AT273227B/de
Priority to BE676602D priority patent/BE676602A/xx
Priority to FR49928A priority patent/FR1468416A/fr
Publication of NL6501946A publication Critical patent/NL6501946A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6501946A 1965-02-17 1965-02-17 NL6501946A (pl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL6501946A NL6501946A (pl) 1965-02-17 1965-02-17
US524925A US3436620A (en) 1965-02-17 1966-02-03 Tapered insulated gate field-effect transistor
CH200766A CH444974A (de) 1965-02-17 1966-02-11 Halbleitervorrichtung
DE19661564383 DE1564383A1 (de) 1965-02-17 1966-02-12 Halbleitervorrichtung
GB6385/66A GB1135632A (en) 1965-02-17 1966-02-14 Improvements in and relating to semiconductor devices
AT132066A AT273227B (de) 1965-02-17 1966-02-14 Halbleitervorrichtung
BE676602D BE676602A (pl) 1965-02-17 1966-02-16
FR49928A FR1468416A (fr) 1965-02-17 1966-02-17 Dispositif semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6501946A NL6501946A (pl) 1965-02-17 1965-02-17

Publications (1)

Publication Number Publication Date
NL6501946A true NL6501946A (pl) 1966-08-18

Family

ID=19792391

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6501946A NL6501946A (pl) 1965-02-17 1965-02-17

Country Status (7)

Country Link
US (1) US3436620A (pl)
AT (1) AT273227B (pl)
BE (1) BE676602A (pl)
CH (1) CH444974A (pl)
DE (1) DE1564383A1 (pl)
GB (1) GB1135632A (pl)
NL (1) NL6501946A (pl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2703877C2 (de) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
DE2706623A1 (de) * 1977-02-16 1978-08-17 Siemens Ag Mis-fet fuer hohe source-drain-spannungen
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
GB2054264B (en) * 1979-06-22 1983-11-02 France Etat Service Postale Deposition and etching process for making semi-conductor components
JP3548237B2 (ja) * 1994-08-29 2004-07-28 シャープ株式会社 薄膜トランジスタ
US5648671A (en) * 1995-12-13 1997-07-15 U S Philips Corporation Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor

Also Published As

Publication number Publication date
AT273227B (de) 1969-08-11
GB1135632A (en) 1968-12-04
BE676602A (pl) 1966-08-16
US3436620A (en) 1969-04-01
DE1564383A1 (de) 1969-09-04
CH444974A (de) 1967-10-15

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