BE676602A - - Google Patents
Info
- Publication number
- BE676602A BE676602A BE676602DA BE676602A BE 676602 A BE676602 A BE 676602A BE 676602D A BE676602D A BE 676602DA BE 676602 A BE676602 A BE 676602A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6501946A NL6501946A (xx) | 1965-02-17 | 1965-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE676602A true BE676602A (xx) | 1966-08-16 |
Family
ID=19792391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE676602D BE676602A (xx) | 1965-02-17 | 1966-02-16 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3436620A (xx) |
| AT (1) | AT273227B (xx) |
| BE (1) | BE676602A (xx) |
| CH (1) | CH444974A (xx) |
| DE (1) | DE1564383A1 (xx) |
| GB (1) | GB1135632A (xx) |
| NL (1) | NL6501946A (xx) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
| DE2706623A1 (de) * | 1977-02-16 | 1978-08-17 | Siemens Ag | Mis-fet fuer hohe source-drain-spannungen |
| JPS54154289A (en) * | 1978-05-26 | 1979-12-05 | Matsushita Electric Ind Co Ltd | Manufacture of thin-film transistor array |
| US4343081A (en) * | 1979-06-22 | 1982-08-10 | L'etat Francais Represente Par Le Secretaire D'etat Aux Postes Et Telecommunications Et A La Telediffusion (Centre National D'etudes Des Telecommunications) | Process for making semi-conductor devices |
| JP3548237B2 (ja) * | 1994-08-29 | 2004-07-28 | シャープ株式会社 | 薄膜トランジスタ |
| US5648671A (en) * | 1995-12-13 | 1997-07-15 | U S Philips Corporation | Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2951191A (en) * | 1958-08-26 | 1960-08-30 | Rca Corp | Semiconductor devices |
| DE1228343B (de) * | 1963-10-22 | 1966-11-10 | Siemens Ag | Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie |
| US3328601A (en) * | 1964-04-06 | 1967-06-27 | Northern Electric Co | Distributed field effect devices |
| US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
-
1965
- 1965-02-17 NL NL6501946A patent/NL6501946A/xx unknown
-
1966
- 1966-02-03 US US524925A patent/US3436620A/en not_active Expired - Lifetime
- 1966-02-11 CH CH200766A patent/CH444974A/de unknown
- 1966-02-12 DE DE19661564383 patent/DE1564383A1/de active Pending
- 1966-02-14 AT AT132066A patent/AT273227B/de active
- 1966-02-14 GB GB6385/66A patent/GB1135632A/en not_active Expired
- 1966-02-16 BE BE676602D patent/BE676602A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1135632A (en) | 1968-12-04 |
| NL6501946A (xx) | 1966-08-18 |
| CH444974A (de) | 1967-10-15 |
| DE1564383A1 (de) | 1969-09-04 |
| AT273227B (de) | 1969-08-11 |
| US3436620A (en) | 1969-04-01 |