Classifications

• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
  • H04L13/00—Details of the apparatus or circuits covered by groups H04L15/00 or H04L17/00
  • H04L13/02—Details not particular to receiver or transmitter
  • H04L13/08—Intermediate storage means
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S1/00—Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith
  • G01S1/02—Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith using radio waves
  • G01S1/08—Systems for determining direction or position line
  • G01S1/44—Rotating or oscillating beam beacons defining directions in the plane of rotation or oscillation
  • G01S1/54—Narrow-beam systems producing at a receiver a pulse-type envelope signal of the carrier wave of the beam, the timing of which is dependent upon the angle between the direction of the receiver from the beacon and a reference direction from the beacon; Overlapping broad beam systems defining a narrow zone and producing at a receiver a pulse-type envelope signal of the carrier wave of the beam, the timing of which is dependent upon the angle between the direction of the receiver from the beacon and a reference direction from the beacon
  • G01S1/58—Narrow-beam systems producing at a receiver a pulse-type envelope signal of the carrier wave of the beam, the timing of which is dependent upon the angle between the direction of the receiver from the beacon and a reference direction from the beacon; Overlapping broad beam systems defining a narrow zone and producing at a receiver a pulse-type envelope signal of the carrier wave of the beam, the timing of which is dependent upon the angle between the direction of the receiver from the beacon and a reference direction from the beacon wherein a characteristic of the beam transmitted or of an auxiliary signal is varied in time synchronously with rotation or oscillation of the beam
  • G01S1/64—Varying pulse timing, e.g. varying interval between pulses radiated in pairs
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
  • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
  • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
  • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
  • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
  • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03G—CONTROL OF AMPLIFICATION
  • H03G1/00—Details of arrangements for controlling amplification
  • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
  • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
  • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H11/00—Networks using active elements
  • H03H11/02—Multiple-port networks
  • H03H11/24—Frequency-independent attenuators
  • H03H11/245—Frequency-independent attenuators using field-effect transistor
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
  • H03H9/30—Time-delay networks
  • H03H9/36—Time-delay networks with non-adjustable delay time
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
  • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
  • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
  • H04L12/00—Data switching networks
  • H04L12/54—Store-and-forward switching systems 

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Networks & Wireless Communication (AREA)
• General Physics & Mathematics (AREA)
• Signal Processing (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Computer Hardware Design (AREA)
• Radar, Positioning & Navigation (AREA)
• Acoustics & Sound (AREA)
• Remote Sensing (AREA)
• Ceramic Engineering (AREA)
• Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
• Amplifiers (AREA)
• Networks Using Active Elements (AREA)
• Small-Scale Networks (AREA)
• Synchronisation In Digital Transmission Systems (AREA)
• Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
• Control Of Amplification And Gain Control (AREA)

Applications Claiming Priority (3)

Publications (1)

Family

ID=27401619

Family Applications (4)

Family Applications Before (3)

Country Status (9)

Families Citing this family (38)

Family Cites Families (17)

• 0
  • NL NL132570D patent/NL132570C/xx active
• 1963
  • 1963-03-07 US US263605A patent/US3229218A/en not_active Expired - Lifetime
  • 1963-03-18 US US265752A patent/US3254317A/en not_active Expired - Lifetime
• 1964
  • 1964-02-19 GB GB6976/64A patent/GB1043621A/en not_active Expired
  • 1964-03-03 BE BE644656A patent/BE644656A/xx unknown
  • 1964-03-04 BR BR157316/64A patent/BR6457316D0/pt unknown
  • 1964-03-06 NL NL6402302A patent/NL6402302A/xx unknown
  • 1964-03-06 DE DER37392A patent/DE1257218B/de active Pending
  • 1964-03-06 SE SE2864/64A patent/SE315018B/xx unknown
  • 1964-03-06 NL NL6402304A patent/NL6402304A/xx unknown
  • 1964-03-10 GB GB10084/64A patent/GB1038651A/en not_active Expired
  • 1964-03-12 FR FR967062A patent/FR1385185A/fr not_active Expired
  • 1964-03-17 DE DEP1268A patent/DE1268750B/de active Pending
  • 1964-03-18 BE BE645370A patent/BE645370A/xx unknown
  • 1964-03-18 CH CH345764A patent/CH435372A/fr unknown
  • 1964-10-14 BE BE654386D patent/BE654386A/xx unknown
  • 1964-10-20 DE DEW37790A patent/DE1295621B/de active Pending
  • 1964-10-21 SE SE12683/64A patent/SE304772B/xx unknown
  • 1964-10-21 GB GB42850/64A patent/GB1078333A/en not_active Expired
  • 1964-10-22 NL NL6412302A patent/NL6412302A/xx unknown

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