NL6410080A - - Google Patents

Info

Publication number
NL6410080A
NL6410080A NL6410080A NL6410080A NL6410080A NL 6410080 A NL6410080 A NL 6410080A NL 6410080 A NL6410080 A NL 6410080A NL 6410080 A NL6410080 A NL 6410080A NL 6410080 A NL6410080 A NL 6410080A
Authority
NL
Netherlands
Application number
NL6410080A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6410080A priority Critical patent/NL6410080A/xx
Priority to US479556A priority patent/US3394085A/en
Priority to DEP1272A priority patent/DE1272452B/de
Priority to AT785265A priority patent/AT270748B/de
Priority to GB36653/65A priority patent/GB1043689A/en
Priority to CH1199365A priority patent/CH477915A/de
Priority to SE11160/65A priority patent/SE321298B/xx
Priority to FR29697A priority patent/FR1445408A/fr
Priority to BE668878A priority patent/BE668878A/xx
Publication of NL6410080A publication Critical patent/NL6410080A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901Structure
    • H01L2224/4903Connectors having different sizes, e.g. different diameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/107Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Catalysts (AREA)
NL6410080A 1964-08-29 1964-08-29 NL6410080A (enrdf_load_stackoverflow)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL6410080A NL6410080A (enrdf_load_stackoverflow) 1964-08-29 1964-08-29
US479556A US3394085A (en) 1964-08-29 1965-08-13 Methods of producing zinc-doped gallium phosphide
DEP1272A DE1272452B (de) 1964-08-29 1965-08-25 Halbleiterstrahlungsquelle aus zinkdotiertem Galliumphosphid und Verfahren zu ihrer Herstellung
AT785265A AT270748B (de) 1964-08-29 1965-08-26 Injektionsstrahlungsquelle mit zinkdotiertem Galliumphosphid und Verfahren zu deren Herstellung
GB36653/65A GB1043689A (en) 1964-08-29 1965-08-26 Improvements in and relating to zinc-doped gallium phosphide
CH1199365A CH477915A (de) 1964-08-29 1965-08-26 Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle
SE11160/65A SE321298B (enrdf_load_stackoverflow) 1964-08-29 1965-08-26
FR29697A FR1445408A (fr) 1964-08-29 1965-08-27 Source de rayonnement de recombinaison à injection
BE668878A BE668878A (enrdf_load_stackoverflow) 1964-08-29 1965-08-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6410080A NL6410080A (enrdf_load_stackoverflow) 1964-08-29 1964-08-29

Publications (1)

Publication Number Publication Date
NL6410080A true NL6410080A (enrdf_load_stackoverflow) 1966-03-01

Family

ID=19790909

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6410080A NL6410080A (enrdf_load_stackoverflow) 1964-08-29 1964-08-29

Country Status (8)

Country Link
US (1) US3394085A (enrdf_load_stackoverflow)
AT (1) AT270748B (enrdf_load_stackoverflow)
BE (1) BE668878A (enrdf_load_stackoverflow)
CH (1) CH477915A (enrdf_load_stackoverflow)
DE (1) DE1272452B (enrdf_load_stackoverflow)
GB (1) GB1043689A (enrdf_load_stackoverflow)
NL (1) NL6410080A (enrdf_load_stackoverflow)
SE (1) SE321298B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549401A (en) * 1966-12-20 1970-12-22 Ibm Method of making electroluminescent gallium phosphide diodes
CA920280A (en) * 1970-11-16 1973-01-30 Omron Tateisi Electronics Co. Semiconductive transducer
JP2698891B2 (ja) * 1992-11-07 1998-01-19 信越半導体株式会社 GaP系発光素子基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT228858B (de) * 1961-02-07 1963-08-12 Philips Nv Elektro-optische Halbleitervorrichtung
US3293513A (en) * 1962-08-08 1966-12-20 Texas Instruments Inc Semiconductor radiant diode
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light

Also Published As

Publication number Publication date
AT270748B (de) 1969-05-12
SE321298B (enrdf_load_stackoverflow) 1970-03-02
US3394085A (en) 1968-07-23
DE1272452B (de) 1968-07-11
GB1043689A (en) 1966-09-21
CH477915A (de) 1969-09-15
BE668878A (enrdf_load_stackoverflow) 1966-02-28

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