NL6405716A - - Google Patents
Info
- Publication number
- NL6405716A NL6405716A NL6405716A NL6405716A NL6405716A NL 6405716 A NL6405716 A NL 6405716A NL 6405716 A NL6405716 A NL 6405716A NL 6405716 A NL6405716 A NL 6405716A NL 6405716 A NL6405716 A NL 6405716A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2724863 | 1963-05-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6405716A true NL6405716A (enrdf_load_stackoverflow) | 1964-11-23 |
Family
ID=12215758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6405716A NL6405716A (enrdf_load_stackoverflow) | 1963-05-22 | 1964-05-22 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3348056A (enrdf_load_stackoverflow) |
DE (1) | DE1489113C3 (enrdf_load_stackoverflow) |
GB (1) | GB1025320A (enrdf_load_stackoverflow) |
NL (1) | NL6405716A (enrdf_load_stackoverflow) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3800156A (en) * | 1966-08-15 | 1974-03-26 | Matsushita Electric Ind Co Ltd | Infrared image converting device |
GB1208308A (en) * | 1966-10-27 | 1970-10-14 | Matsushita Electric Ind Co Ltd | Electroluminescent display devices |
US3571654A (en) * | 1967-12-28 | 1971-03-23 | Matsushita Electric Ind Co Ltd | Electroluminescent display system including a preselectably applied low resistance material means |
JPS4813277B1 (enrdf_load_stackoverflow) * | 1968-02-02 | 1973-04-26 | ||
US3710127A (en) * | 1971-04-19 | 1973-01-09 | Matsushita Electric Ind Co Ltd | Solid-state image converter having composite energy sensing element |
DE3312264A1 (de) * | 1983-04-05 | 1984-10-11 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur aufnahme von roentgenbildern |
JP2003332560A (ja) * | 2002-05-13 | 2003-11-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及びマイクロプロセッサ |
JP4094386B2 (ja) * | 2002-09-02 | 2008-06-04 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
JP4373063B2 (ja) | 2002-09-02 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
JP4574118B2 (ja) * | 2003-02-12 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
CN100502609C (zh) * | 2004-12-29 | 2009-06-17 | 郑岩 | 场致发光线 |
DE102007030108A1 (de) * | 2007-06-28 | 2009-01-02 | Lyttron Technology Gmbh | Anorganisches Dickfilm-AC Elektrolumineszenzelement mit zumindest zwei Einspeisungen und Herstellverfahren und Anwendung |
DE102010028206A1 (de) * | 2010-04-26 | 2011-10-27 | Tesa Se | Optisch durchgängige, tiefziehfähige Elektrode und diese enthaltendes Flächenelement für EL-Folie/-Lampen |
CN114077134A (zh) * | 2020-08-17 | 2022-02-22 | 深圳市绎立锐光科技开发有限公司 | 波长转换装置及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1033812B (de) * | 1955-10-14 | 1958-07-10 | Philips Nv | Feststoffbildverstaerker mit einer strahlungsempfindlichen und einer elektroleuchtenden Schicht |
US2929950A (en) * | 1955-12-30 | 1960-03-22 | Electronique & Automatisme Sa | Electroluminescence devices |
US3217168A (en) * | 1960-12-29 | 1965-11-09 | Philips Corp | Photosensitive solid-state image intensifier |
US3101408A (en) * | 1961-01-18 | 1963-08-20 | John W Taylor | Ionizing radiation detector of the scintillation photoconductive type |
-
1964
- 1964-05-20 US US368906A patent/US3348056A/en not_active Expired - Lifetime
- 1964-05-20 GB GB20834/64A patent/GB1025320A/en not_active Expired
- 1964-05-22 NL NL6405716A patent/NL6405716A/xx unknown
- 1964-05-22 DE DE1489113A patent/DE1489113C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1489113A1 (de) | 1969-04-24 |
DE1489113B2 (de) | 1973-12-20 |
GB1025320A (en) | 1966-04-06 |
DE1489113C3 (de) | 1974-07-11 |
US3348056A (en) | 1967-10-17 |