GB1025320A - Radiant energy responsive display device - Google Patents
Radiant energy responsive display deviceInfo
- Publication number
- GB1025320A GB1025320A GB20834/64A GB2083464A GB1025320A GB 1025320 A GB1025320 A GB 1025320A GB 20834/64 A GB20834/64 A GB 20834/64A GB 2083464 A GB2083464 A GB 2083464A GB 1025320 A GB1025320 A GB 1025320A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- photo
- conductive
- thick
- activated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011230 binding agent Substances 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- 239000004593 Epoxy Substances 0.000 abstract 1
- 239000000020 Nitrocellulose Substances 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 abstract 1
- WCTSEESBGKAXFE-UHFFFAOYSA-J [F-].[Mn+2].[Zn+2].[F-].[F-].[F-] Chemical compound [F-].[Mn+2].[Zn+2].[F-].[F-].[F-] WCTSEESBGKAXFE-UHFFFAOYSA-J 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 229920001220 nitrocellulos Polymers 0.000 abstract 1
- 229940079938 nitrocellulose Drugs 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000003973 paint Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- -1 silver activated zinc cadmium sulphide Chemical class 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- 239000011787 zinc oxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Abstract
An image converter having a photo-conductive and an electroluminescent layer between suitable electrodes also has a luminescent layer such that incident radiation excites the luminescent layer, the radiations from which have a wavelength in the region of maximum sensitivity of the photo-conductive material. The device may comprise a base-plate 1, e.g. glass, a conductive layer 2, e.g. tin oxide, an electroluminescent layer 3, e.g. zinc oxide activated by copper or manganese, a reflective layer 13 of e.g. titanium oxide or barium titanate which also serves to prevent electrical breakdown, an opaque layer 4 of e.g. carbon in a plastic organic binder, 1-10m thick, to prevent optical feed-back, a photo-conductive layer 5 <PICT:1025320/C4-C5/1> e.g. of cadmium sulphide activated by copper or chlorine in a binder, 5-100 m thick, a grid electrode 6, e.g. of gold-plated tungsten wires 10-30 m diameter, 50-100 m mesh, or 10-150 m diameter, 250-700 m mesh, a luminescent layer 101, e.g. of zinc manganese fluoride for cathode luminescence, or of silver activated zinc cadmium sulphide in a glass, epoxy or nitro-cellulose binder, 20-200 m thick, a transparent impedance layer 103, e.g. a plastic or glass film, and an electrode layer 7, e.g. vapour deposited aluminium or silver paint. Since the luminescent layer 101 should be thin, to avoid self-absorption, a transparent dielectric layer may be included between the layers 101 and the photo-conductive layer 5. Variations of the magnitudes and phases of the voltages V1 and V2 enable a positive, a negative, or an intermediate (U-shaped) response characteristic to be obtained.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2724863 | 1963-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1025320A true GB1025320A (en) | 1966-04-06 |
Family
ID=12215758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB20834/64A Expired GB1025320A (en) | 1963-05-22 | 1964-05-20 | Radiant energy responsive display device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3348056A (en) |
| DE (1) | DE1489113C3 (en) |
| GB (1) | GB1025320A (en) |
| NL (1) | NL6405716A (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3800156A (en) * | 1966-08-15 | 1974-03-26 | Matsushita Electric Ind Co Ltd | Infrared image converting device |
| GB1208308A (en) * | 1966-10-27 | 1970-10-14 | Matsushita Electric Ind Co Ltd | Electroluminescent display devices |
| US3571654A (en) * | 1967-12-28 | 1971-03-23 | Matsushita Electric Ind Co Ltd | Electroluminescent display system including a preselectably applied low resistance material means |
| JPS4813277B1 (en) * | 1968-02-02 | 1973-04-26 | ||
| US3710127A (en) * | 1971-04-19 | 1973-01-09 | Matsushita Electric Ind Co Ltd | Solid-state image converter having composite energy sensing element |
| DE3312264A1 (en) * | 1983-04-05 | 1984-10-11 | Siemens AG, 1000 Berlin und 8000 München | DEVICE FOR TAKING X-RAY IMAGES |
| JP2003332560A (en) * | 2002-05-13 | 2003-11-21 | Semiconductor Energy Lab Co Ltd | Semiconductor device and microprocessor |
| JP4373063B2 (en) | 2002-09-02 | 2009-11-25 | 株式会社半導体エネルギー研究所 | Electronic circuit equipment |
| JP4094386B2 (en) * | 2002-09-02 | 2008-06-04 | 株式会社半導体エネルギー研究所 | Electronic circuit equipment |
| JP4574118B2 (en) * | 2003-02-12 | 2010-11-04 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
| CN100502609C (en) * | 2004-12-29 | 2009-06-17 | 郑岩 | Electroluminescence wire |
| DE102007030108A1 (en) * | 2007-06-28 | 2009-01-02 | Lyttron Technology Gmbh | Inorganic thick film AC electroluminescent element with at least two feeds and manufacturing process and application |
| DE102010028206A1 (en) * | 2010-04-26 | 2011-10-27 | Tesa Se | Optically continuous, deep-drawable electrode and surface element containing it for EL film / lamps |
| CN114077134A (en) * | 2020-08-17 | 2022-02-22 | 深圳市绎立锐光科技开发有限公司 | Wavelength conversion device and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1033812B (en) * | 1955-10-14 | 1958-07-10 | Philips Nv | Solid image intensifier with a radiation-sensitive and an electro-luminous layer |
| US2929950A (en) * | 1955-12-30 | 1960-03-22 | Electronique & Automatisme Sa | Electroluminescence devices |
| US3217168A (en) * | 1960-12-29 | 1965-11-09 | Philips Corp | Photosensitive solid-state image intensifier |
| US3101408A (en) * | 1961-01-18 | 1963-08-20 | John W Taylor | Ionizing radiation detector of the scintillation photoconductive type |
-
1964
- 1964-05-20 US US368906A patent/US3348056A/en not_active Expired - Lifetime
- 1964-05-20 GB GB20834/64A patent/GB1025320A/en not_active Expired
- 1964-05-22 NL NL6405716A patent/NL6405716A/xx unknown
- 1964-05-22 DE DE1489113A patent/DE1489113C3/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1489113A1 (en) | 1969-04-24 |
| DE1489113B2 (en) | 1973-12-20 |
| NL6405716A (en) | 1964-11-23 |
| DE1489113C3 (en) | 1974-07-11 |
| US3348056A (en) | 1967-10-17 |
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