GB1063484A - Solid-state image intensifier - Google Patents

Solid-state image intensifier

Info

Publication number
GB1063484A
GB1063484A GB45435/63A GB4543563A GB1063484A GB 1063484 A GB1063484 A GB 1063484A GB 45435/63 A GB45435/63 A GB 45435/63A GB 4543563 A GB4543563 A GB 4543563A GB 1063484 A GB1063484 A GB 1063484A
Authority
GB
United Kingdom
Prior art keywords
layer
photo
electroluminescent
microns thick
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45435/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1063484A publication Critical patent/GB1063484A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/141—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Electroluminescent Light Sources (AREA)
  • Radiation-Therapy Devices (AREA)
  • Luminescent Compositions (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)

Abstract

An electroluminescent photo-conductive device comprises an electroluminescent layer (3, Fig. 1), a photo-conductive layer (6) and an electrical impedance layer (8), and means for applying two variable A.C. voltages V1 and V2 across the three layers (3, 6 and 8) and the two, photo-conductive and electroluminescent, layers (3 and 6) respectively, the voltages being out of phase and the phase difference variable, to vary the contrast obtainable in the electroluminescent screen. The device may be mounted between glass plates (1, 11) and have electrodes (2, 7 and 9). The electroluminescent material may be e.g. ZnS with Cu or Al as activator, mixed with an epoxy resin to give a layer 60 microns thick. The photo-conductive layers, sensitive to X-rays, alpha, beta or gamma rays, an electron beam, or visible or infra-red rays, may be, e.g. CuS with copper chloride activator, mixed with an epoxy resin to give a layer 60 microns thick. The device may have an opaque reflective layer (4), e.g. BaTiO3, mixed with epoxy resin, 20 microns thick, and an opaque layer (5) 10 microns thick, of black organic resin paint. The impedance element (8) may be made of a transparent poly-ester, of capacitive impedance only, 50 microns thick. Transparent electrodes (2 and 9) may be of tin oxide. One electrode (7) may be a wire grid or mesh, and alternate wires may have, across them, a small D.C. potential to reduce deterioration in the conductivity of the photo-conductive layer. To produce a "negative image, the photo-conductive layer may be one, e.g. CdS activated with silver and gallium, whose conductivity increases with visible, ultra-violet, alpha or X-rays, but decreases with infra-red radiation, the screen being kept irradiated with infra-red. Suitable circuits, comprising an oscillator (12), phase shifter (13, 14) and amplifiers (15, 16) are described.
GB45435/63A 1962-11-20 1963-11-18 Solid-state image intensifier Expired GB1063484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5225462 1962-11-20

Publications (1)

Publication Number Publication Date
GB1063484A true GB1063484A (en) 1967-03-30

Family

ID=12909589

Family Applications (1)

Application Number Title Priority Date Filing Date
GB45435/63A Expired GB1063484A (en) 1962-11-20 1963-11-18 Solid-state image intensifier

Country Status (3)

Country Link
US (1) US3315080A (en)
DE (1) DE1464274C3 (en)
GB (1) GB1063484A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150351A (en) * 1983-11-22 1985-06-26 Sharp Kk Photoconductive member

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931595B1 (en) * 1967-03-31 1974-08-22
GB1245595A (en) * 1967-09-11 1971-09-08 Matsushita Electric Ind Co Ltd Energy-responsive luminescent device
US3426209A (en) * 1967-09-11 1969-02-04 Texas Instruments Inc Light responsive variable capacitor
JPS4813277B1 (en) * 1968-02-02 1973-04-26
US3828186A (en) * 1972-08-09 1974-08-06 Vocon Inc Apparatus for intensifying radiation images
JPS5437800B2 (en) * 1973-06-19 1979-11-16
US4785143A (en) * 1987-08-17 1988-11-15 Miller Norman K Safety edge for a door

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3015731A (en) * 1954-08-21 1962-01-02 Philips Corp Radiation indicating device
US3247390A (en) * 1955-12-01 1966-04-19 Rca Corp Electroluminescent device
US2905830A (en) * 1955-12-07 1959-09-22 Rca Corp Light amplifying device
US2883556A (en) * 1956-05-31 1959-04-21 Rca Corp Light inverters
US2989641A (en) * 1957-10-30 1961-06-20 Rca Corp Storage light amplifier
US3217168A (en) * 1960-12-29 1965-11-09 Philips Corp Photosensitive solid-state image intensifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150351A (en) * 1983-11-22 1985-06-26 Sharp Kk Photoconductive member

Also Published As

Publication number Publication date
DE1464274A1 (en) 1969-09-04
US3315080A (en) 1967-04-18
DE1464274B2 (en) 1974-06-06
DE1464274C3 (en) 1975-01-30

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