GB1006450A - Improvements in or relating to arrangements comprising a solid-state image intensifier - Google Patents

Improvements in or relating to arrangements comprising a solid-state image intensifier

Info

Publication number
GB1006450A
GB1006450A GB46651/61A GB4665161A GB1006450A GB 1006450 A GB1006450 A GB 1006450A GB 46651/61 A GB46651/61 A GB 46651/61A GB 4665161 A GB4665161 A GB 4665161A GB 1006450 A GB1006450 A GB 1006450A
Authority
GB
United Kingdom
Prior art keywords
layer
electrodes
thick
electrode
opaque
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46651/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1006450A publication Critical patent/GB1006450A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Luminescent Compositions (AREA)
  • Apparatus For Radiation Diagnosis (AREA)

Abstract

<PICT:1006450/C4-C5/1> A solid-state image intensifier comprises a photo-conductive layer 8 positioned between an electroluminescent layer 5 and a transparent dielectric layer 10, and has electrodes (a) 4, on the outer side of the e.l. layer 5; (b) 11, on the outer side of the dielectric layer 10; and (c) 9, on or in the photo-conductive layer 8, the electrodes (a) and (b) being transparent and (c) being gridlike; and the intensifier has a supply source 2 to apply a voltage V2 between electrodes (a) and (b), and a voltage V1 between electrodes (a) and (c), V1 and V2 being both D.C. or both A.C. of the same frequency, but means being provided to vary the two voltages if D.C., or to vary their amplitude or phase difference if A.C. The electrode 9 may comprise two sets of adjacent parallel wires, alternate ones having differing voltages (Fig. 5, not shown). Use of the device to provide variable contrast, and image inversion, is described. A reflective layer 6 and an opaque layer 7, may be provided to prevent, or limit, feed-back from the e.l. to the p.c. layer. The electroluminescent material may comprise e.g. ZnS activated by Cu and Al, in an epoxy resin binder 50 m thick. The electrodes 4 and 11 may be tin oxide or vapour-deposited gold, and the electrode 9 may consist of parallel tungsten wires, 10m diameter spaced 250m apart. The reflective layer 6, 20 m thick, may be barium titanate or titanium dioxide in an epoxy resin, the opaque layer 7 may comprise carbon in an epoxy binder, and the dielectric layer 10, 70m thick, may be a glass foil, or an epoxy sheet. The electrode 11 may comprise an opaque aluminium plate, for use with incident X-rays.
GB46651/61A 1960-12-29 1961-12-29 Improvements in or relating to arrangements comprising a solid-state image intensifier Expired GB1006450A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5163960 1960-12-29

Publications (1)

Publication Number Publication Date
GB1006450A true GB1006450A (en) 1965-10-06

Family

ID=12892400

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46651/61A Expired GB1006450A (en) 1960-12-29 1961-12-29 Improvements in or relating to arrangements comprising a solid-state image intensifier

Country Status (3)

Country Link
US (1) US3217168A (en)
CH (1) CH413145A (en)
GB (1) GB1006450A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3315080A (en) * 1962-11-20 1967-04-18 Matsushita Electric Ind Co Ltd Solid-state image intensifier with variable contrast ratio
US3348056A (en) * 1963-05-22 1967-10-17 Matsushita Electric Ind Co Ltd Wavelength converting type radiant energy responsive display device
US3495088A (en) * 1965-10-25 1970-02-10 Matsushita Electric Ind Co Ltd Energy-sensitive luminous display device
US3440428A (en) * 1966-09-29 1969-04-22 Xerox Corp Image converter using charged photoemissive layer
FR1557227A (en) * 1967-02-24 1969-02-14
JPS4813277B1 (en) * 1968-02-02 1973-04-26

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2975294A (en) * 1957-10-31 1961-03-14 Rca Corp Electroluminescent apparatus
US2916630A (en) * 1958-11-28 1959-12-08 Westinghouse Electric Corp Electroluminescent device
US3070702A (en) * 1960-07-15 1962-12-25 Gen Telephone & Elect Electroluminescent arithmetic circuit

Also Published As

Publication number Publication date
US3217168A (en) 1965-11-09
CH413145A (en) 1966-05-15

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