NL302322A - - Google Patents

Info

Publication number
NL302322A
NL302322A NL302322DA NL302322A NL 302322 A NL302322 A NL 302322A NL 302322D A NL302322D A NL 302322DA NL 302322 A NL302322 A NL 302322A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL302322A publication Critical patent/NL302322A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2902Materials being Group IVA materials
    • H10P14/2905Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/10Lift-off masking
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/105Masks, metal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/147Silicides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/945Special, e.g. metal
NL302322D 1963-02-08 NL302322A (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB523263 1963-02-08
GB5233/63A GB998199A (en) 1963-02-08 1963-02-08 Improvements in or relating to the manufacture of semiconductor devices

Publications (1)

Publication Number Publication Date
NL302322A true NL302322A (https=)

Family

ID=26239738

Family Applications (2)

Application Number Title Priority Date Filing Date
NL302322D NL302322A (https=) 1963-02-08
NL302323D NL302323A (https=) 1963-02-08

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL302323D NL302323A (https=) 1963-02-08

Country Status (6)

Country Link
US (1) US3306788A (https=)
BE (2) BE643485A (https=)
CH (1) CH418466A (https=)
DE (1) DE1544306A1 (https=)
GB (2) GB998199A (https=)
NL (2) NL302323A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634150A (en) * 1969-06-25 1972-01-11 Gen Electric Method for forming epitaxial crystals or wafers in selected regions of substrates
JPS4926747B1 (https=) * 1970-10-09 1974-07-11
DE2151127C3 (de) * 1970-12-16 1981-04-16 International Business Machines Corp., 10504 Armonk, N.Y. Verfahren zum Abscheiden eines Metallisierungsmusters und seine Anwendung
DE2160008B2 (de) * 1971-12-03 1973-11-15 Robert Bosch Gmbh, 7000 Stuttgart Verfahren und Vorrichtung zur Herstellung eines Musters in einer auf einem Träger aufgedampften Metallschicht und dessen Verwendung
FR2252638B1 (https=) * 1973-11-23 1978-08-04 Commissariat Energie Atomique
FR2459551A1 (fr) * 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque
US4453306A (en) * 1983-05-27 1984-06-12 At&T Bell Laboratories Fabrication of FETs
US4637129A (en) * 1984-07-30 1987-01-20 At&T Bell Laboratories Selective area III-V growth and lift-off using tungsten patterning

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL242671A (https=) * 1959-08-25
US3140965A (en) * 1961-07-22 1964-07-14 Siemens Ag Vapor deposition onto stacked semiconductor wafers followed by particular cooling
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching

Also Published As

Publication number Publication date
NL302323A (https=)
DE1544306A1 (de) 1969-07-10
US3306788A (en) 1967-02-28
GB1051451A (https=)
GB998199A (en) 1965-07-14
BE643485A (https=) 1964-08-07
CH418466A (de) 1966-08-15
BE643486A (https=) 1964-08-07

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