NL299821A - - Google Patents

Info

Publication number
NL299821A
NL299821A NL299821DA NL299821A NL 299821 A NL299821 A NL 299821A NL 299821D A NL299821D A NL 299821DA NL 299821 A NL299821 A NL 299821A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL299821A publication Critical patent/NL299821A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • B23K15/08Removing material, e.g. by cutting, by hole drilling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3005Observing the objects or the point of impact on the object
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/2633Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00Severing by tearing or breaking
    • Y10T225/10Methods
    • Y10T225/12With preliminary weakening

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • Mining & Mineral Resources (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
NL299821D 1962-10-31 NL299821A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23437362 US3112850A (en) 1962-10-31 1962-10-31 Dicing of micro-semiconductors

Publications (1)

Publication Number Publication Date
NL299821A true NL299821A (es) 1900-01-01

Family

ID=22881112

Family Applications (1)

Application Number Title Priority Date Filing Date
NL299821D NL299821A (es) 1962-10-31

Country Status (3)

Country Link
US (1) US3112850A (es)
GB (1) GB1057127A (es)
NL (1) NL299821A (es)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552675A (en) * 1959-04-08 1996-09-03 Lemelson; Jerome H. High temperature reaction apparatus
US3226527A (en) * 1963-10-23 1965-12-28 William H Harding Apparatus for perforating sheet material
US3207198A (en) * 1963-10-25 1965-09-21 Jr Clement T Beeson Method and apparatus for breaking and separating eggs
CH451355A (de) * 1965-03-30 1968-05-15 Steigerwald Gmbh K H Verfahren zur Materialbearbeitung mit Strahlungsenergie
US3384279A (en) * 1966-08-23 1968-05-21 Western Electric Co Methods of severing brittle material along prescribed lines
US3469076A (en) * 1967-06-01 1969-09-23 Producto Machine Co The Apparatus for removing flashing from molded plastic articles
US3629545A (en) * 1967-12-19 1971-12-21 Western Electric Co Laser substrate parting
US3701880A (en) * 1968-11-29 1972-10-31 Westinghouse Electric Corp Method for sculpturing an indicia or decorative design in the surface of an article with a beam of corpuscular energy
CH528238A (fr) * 1969-06-03 1972-09-30 Velcro Sa Soulie Procédé pour effectuer la coupe de boucles en fils de matière synthétique placées sur un support pour en faire des crochets
US3696742A (en) * 1969-10-06 1972-10-10 Monsanto Res Corp Method of making a stencil for screen-printing using a laser beam
US3610871A (en) * 1970-02-19 1971-10-05 Western Electric Co Initiation of a controlled fracture
US3695497A (en) * 1970-08-26 1972-10-03 Ppg Industries Inc Method of severing glass
US3824678A (en) * 1970-08-31 1974-07-23 North American Rockwell Process for laser scribing beam lead semiconductor wafers
US3818577A (en) * 1971-01-15 1974-06-25 Caterpillar Tractor Co Connecting rod manufacturing
US3952404A (en) * 1973-07-30 1976-04-27 Sharp Kabushiki Kaisha Beam lead formation method
US3863333A (en) * 1973-08-31 1975-02-04 Bell Telephone Labor Inc Methods for making semiconductor devices
US4019248A (en) * 1974-06-04 1977-04-26 Texas Instruments Incorporated High voltage junction semiconductor device fabrication
US3997964A (en) * 1974-09-30 1976-12-21 General Electric Company Premature breakage resistant semiconductor wafer and method for the manufacture thereof
US3970819A (en) * 1974-11-25 1976-07-20 International Business Machines Corporation Backside laser dicing system
US4174561A (en) * 1976-02-09 1979-11-20 Semicon, Inc. Method of fabricating high intensity solar energy converter
NL7609815A (nl) * 1976-09-03 1978-03-07 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4203127A (en) * 1977-07-18 1980-05-13 Motorola, Inc. Package and method of packaging semiconductor wafers
US4401876A (en) 1980-05-20 1983-08-30 Martin Cooper Working gemstones
US4473424A (en) * 1981-06-17 1984-09-25 Sorko Ram Paul O Decorative mirrored article
US4694568A (en) * 1982-01-07 1987-09-22 North American Philips Corporation Method of manufacturing chip resistors with edge around terminations
US4661718A (en) * 1984-06-07 1987-04-28 Nippondenso Co., Ltd. Information and electrical power transmission system and method for vehicle
RU2024441C1 (ru) * 1992-04-02 1994-12-15 Владимир Степанович Кондратенко Способ резки неметаллических материалов
DE59408996D1 (de) * 1993-03-02 2000-01-20 Ceramtec Ag Verfahren zum Herstellen von unterteilbaren Platten aus sprödem Material mit hoher Genauigkeit
US5932119A (en) 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system
WO1997029509A1 (en) * 1996-02-09 1997-08-14 Philips Electronics N.V. Laser separation of semiconductor elements formed in a wafer of semiconductor material
JPH10305420A (ja) 1997-03-04 1998-11-17 Ngk Insulators Ltd 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法
US6268641B1 (en) 1998-03-30 2001-07-31 Kabushiki Kaisha Toshiba Semiconductor wafer having identification indication and method of manufacturing the same
TR200201402T2 (tr) 1999-11-24 2003-03-21 Applied Photonics, Inc. Metalik olmayan materyallerin ayrılması için yöntem ve cihaz.
US6919531B2 (en) * 2002-03-25 2005-07-19 Agilent Technologies, Inc. Methods for producing glass substrates for use in biopolymeric microarrays
JP2005019667A (ja) * 2003-06-26 2005-01-20 Disco Abrasive Syst Ltd レーザ光線を利用した半導体ウエーハの分割方法
JP4601403B2 (ja) * 2004-11-25 2010-12-22 パナソニック株式会社 半導体レーザ素子の製造方法及びその製造装置
US20140339280A1 (en) * 2013-05-20 2014-11-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method and Device for Scribing and Breaking Glass Substrate
JP6391471B2 (ja) 2015-01-06 2018-09-19 株式会社ディスコ ウエーハの生成方法
JP2017055012A (ja) * 2015-09-11 2017-03-16 株式会社東芝 デバイスの製造方法
JP6858587B2 (ja) * 2017-02-16 2021-04-14 株式会社ディスコ ウエーハ生成方法
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
CN114347281A (zh) * 2022-01-18 2022-04-15 锦州神工半导体股份有限公司 一种单晶硅片切割方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2337569A (en) * 1939-05-20 1943-12-28 Pietschack Ernst Method of producing mosaic electrodes
DE896827C (de) * 1951-09-08 1953-11-16 Licentia Gmbh Verfahren zur formgebenden Bearbeitung von kristallenen Halbleiterkoerpern
US2970730A (en) * 1957-01-08 1961-02-07 Motorola Inc Dicing semiconductor wafers
NL245195A (es) * 1958-12-11

Also Published As

Publication number Publication date
US3112850A (en) 1963-12-03
GB1057127A (en) 1967-02-01

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