NL288409A - - Google Patents
Info
- Publication number
- NL288409A NL288409A NL288409DA NL288409A NL 288409 A NL288409 A NL 288409A NL 288409D A NL288409D A NL 288409DA NL 288409 A NL288409 A NL 288409A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P95/00—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES77852A DE1236481B (de) | 1962-02-02 | 1962-02-02 | Verfahren zur Herstellen einer Halbleiteranordnung durch Abscheiden des Halbleiterstoffes aus der Gasphase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL288409A true NL288409A (cg-RX-API-DMAC10.html) |
Family
ID=7507071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL288409D NL288409A (cg-RX-API-DMAC10.html) | 1962-02-02 |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH408876A (cg-RX-API-DMAC10.html) |
| DE (1) | DE1236481B (cg-RX-API-DMAC10.html) |
| GB (1) | GB970456A (cg-RX-API-DMAC10.html) |
| NL (1) | NL288409A (cg-RX-API-DMAC10.html) |
| SE (1) | SE325641B (cg-RX-API-DMAC10.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3372671A (en) * | 1965-05-26 | 1968-03-12 | Westinghouse Electric Corp | Apparatus for producing vapor growth of silicon crystals |
| JPS5277590A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Semiconductor producing device |
| NL187414C (nl) * | 1978-04-21 | 1991-09-16 | Philips Nv | Werkwijze voor het aanbrengen van een epitaxiale laag. |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE943422C (de) * | 1949-04-02 | 1956-05-17 | Licentia Gmbh | Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz |
| DE853926C (de) * | 1949-04-02 | 1952-10-30 | Licentia Gmbh | Verfahren zum Herstellen von Trockengleichrichtern mit Silizium als halbleitender Substanz |
| NL99536C (cg-RX-API-DMAC10.html) * | 1951-03-07 | 1900-01-01 | ||
| DE950848C (de) * | 1953-03-19 | 1956-10-18 | Heraeus Gmbh W C | Verfahren zur Herstellung von reinem Silicium |
| DE1057845B (de) * | 1954-03-10 | 1959-05-21 | Licentia Gmbh | Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen |
| DE966471C (de) * | 1954-07-14 | 1957-08-08 | Heraeus Gmbh W C | Verfahren zur Herstellung von reinem Silicium |
| DE1063870B (de) * | 1956-06-28 | 1959-08-20 | Gustav Weissenberg | Verfahren und Vorrichtung zum tiegellosen Zuechten von Einkristallen aus hochreinem Silicium oder Germanium |
| NL268294A (cg-RX-API-DMAC10.html) | 1960-10-10 |
-
0
- NL NL288409D patent/NL288409A/xx unknown
-
1962
- 1962-02-02 DE DES77852A patent/DE1236481B/de active Pending
-
1963
- 1963-01-31 CH CH123363A patent/CH408876A/de unknown
- 1963-02-01 SE SE01158/63A patent/SE325641B/xx unknown
- 1963-02-01 GB GB4147/63A patent/GB970456A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH408876A (de) | 1966-03-15 |
| SE325641B (cg-RX-API-DMAC10.html) | 1970-07-06 |
| GB970456A (en) | 1964-09-23 |
| DE1236481B (de) | 1967-03-16 |