NL281568A - - Google Patents

Info

Publication number
NL281568A
NL281568A NL281568DA NL281568A NL 281568 A NL281568 A NL 281568A NL 281568D A NL281568D A NL 281568DA NL 281568 A NL281568 A NL 281568A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL281568A publication Critical patent/NL281568A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
NL281568D 1961-08-16 NL281568A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US131771A US3144366A (en) 1961-08-16 1961-08-16 Method of fabricating a plurality of pn junctions in a semiconductor body

Publications (1)

Publication Number Publication Date
NL281568A true NL281568A (OSRAM)

Family

ID=22450959

Family Applications (1)

Application Number Title Priority Date Filing Date
NL281568D NL281568A (OSRAM) 1961-08-16

Country Status (6)

Country Link
US (1) US3144366A (OSRAM)
BE (1) BE621451A (OSRAM)
CH (1) CH402194A (OSRAM)
DE (1) DE1266609B (OSRAM)
GB (1) GB992671A (OSRAM)
NL (1) NL281568A (OSRAM)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377215A (en) * 1961-09-29 1968-04-09 Texas Instruments Inc Diode array
GB1052379A (OSRAM) * 1963-03-28 1900-01-01
US3291640A (en) * 1963-05-27 1966-12-13 Chemclean Corp Ultrasonic cleaning process
DE1290925B (de) * 1963-06-10 1969-03-20 Philips Nv Verfahren zum Abscheiden von Silicium auf einem Halbleiterkoerper
NL136562C (OSRAM) * 1963-10-24
US3352726A (en) * 1964-04-13 1967-11-14 Philco Ford Corp Method of fabricating planar semiconductor devices
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
US3372071A (en) * 1965-06-30 1968-03-05 Texas Instruments Inc Method of forming a small area junction semiconductor
US3447238A (en) * 1965-08-09 1969-06-03 Raytheon Co Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion
US3383251A (en) * 1965-12-10 1968-05-14 Rca Corp Method for forming of semiconductor devices by masking and diffusion
US3468729A (en) * 1966-03-21 1969-09-23 Westinghouse Electric Corp Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity
US3489956A (en) * 1966-09-30 1970-01-13 Nippon Electric Co Semiconductor device container
US3419746A (en) * 1967-05-25 1968-12-31 Bell Telephone Labor Inc Light sensitive storage device including diode array
US3442012A (en) * 1967-08-03 1969-05-06 Teledyne Inc Method of forming a flip-chip integrated circuit
US3772102A (en) * 1969-10-27 1973-11-13 Gen Electric Method of transferring a desired pattern in silicon to a substrate layer
FR2252638B1 (OSRAM) * 1973-11-23 1978-08-04 Commissariat Energie Atomique
DE2415290A1 (de) * 1974-03-29 1975-10-09 Licentia Gmbh Maske zur bearbeitung einer halbleiteranordnung
US6087263A (en) * 1998-01-29 2000-07-11 Micron Technology, Inc. Methods of forming integrated circuitry and integrated circuitry structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE505362A (OSRAM) * 1950-09-06
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
DE1047911B (de) * 1955-06-07 1958-12-31 Dr Erwin Daniels Verfahren zur Herstellung temperaturempfindlicher Hochohmwiderstaende geringer Waermetraegheit, insbesondere zur Strahlungsmessung
US2995461A (en) * 1956-04-02 1961-08-08 Libbey Owens Ford Glass Co Protective coatings
DE1097039B (de) * 1958-07-02 1961-01-12 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleiteranordnungen
US2961354A (en) * 1958-10-28 1960-11-22 Bell Telephone Labor Inc Surface treatment of semiconductive devices
NL255154A (OSRAM) * 1959-04-15

Also Published As

Publication number Publication date
CH402194A (de) 1965-11-15
US3144366A (en) 1964-08-11
GB992671A (en) 1965-05-19
DE1266609B (de) 1968-04-18
BE621451A (OSRAM)

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