NL275889A - - Google Patents

Info

Publication number
NL275889A
NL275889A NL275889DA NL275889A NL 275889 A NL275889 A NL 275889A NL 275889D A NL275889D A NL 275889DA NL 275889 A NL275889 A NL 275889A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL275889A publication Critical patent/NL275889A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
NL275889D 1961-03-14 NL275889A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0072962 DE1262979B (de) 1961-03-14 1961-03-14 Verfahren und Vorrichtung zum Herstellen einkristalliner Schichten durch Aufdampfen

Publications (1)

Publication Number Publication Date
NL275889A true NL275889A (fr)

Family

ID=7503587

Family Applications (1)

Application Number Title Priority Date Filing Date
NL275889D NL275889A (fr) 1961-03-14

Country Status (5)

Country Link
CH (1) CH395680A (fr)
DE (1) DE1262979B (fr)
FR (1) FR1317607A (fr)
GB (1) GB948997A (fr)
NL (1) NL275889A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298512B (de) * 1964-03-13 1969-07-03 Telefunken Patent Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen
US3514320A (en) * 1969-02-10 1970-05-26 William H Vaughan Method of forming single crystal films by nonepitaxial growth

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE514927A (fr) * 1952-01-22
DE1057845B (de) * 1954-03-10 1959-05-21 Licentia Gmbh Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen
DE1054802B (de) * 1956-03-05 1959-04-09 Westinghouse Electric Corp Verfahren zur Verdampfung von Stoffen, insbesondere zur Erzeugung der UEbergangszonen (junctions) von Transistoren
BE555438A (fr) * 1956-03-05

Also Published As

Publication number Publication date
CH395680A (de) 1965-07-15
GB948997A (en) 1964-02-05
FR1317607A (fr) 1963-05-08
DE1262979B (de) 1968-03-14

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