NL275313A - - Google Patents

Info

Publication number
NL275313A
NL275313A NL275313DA NL275313A NL 275313 A NL275313 A NL 275313A NL 275313D A NL275313D A NL 275313DA NL 275313 A NL275313 A NL 275313A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL275313A publication Critical patent/NL275313A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/039Displace P-N junction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/919Compensation doping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/923Diffusion through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
NL275313D 1961-05-10 NL275313A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0073904 DE1141724C2 (de) 1961-05-10 1961-05-10 Verfahren zum Herstellen eines p-n-UEbergangs in einer einkristallinen Halbleiteranordnung

Publications (1)

Publication Number Publication Date
NL275313A true NL275313A (es)

Family

ID=7504268

Family Applications (1)

Application Number Title Priority Date Filing Date
NL275313D NL275313A (es) 1961-05-10

Country Status (6)

Country Link
US (1) US3260624A (es)
CH (1) CH415856A (es)
DE (1) DE1141724C2 (es)
FR (1) FR1321379A (es)
GB (1) GB966257A (es)
NL (1) NL275313A (es)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE633263A (es) * 1962-06-06
GB1052447A (es) * 1962-09-15
GB1051720A (es) * 1963-03-07 1900-01-01
DE1227154B (de) * 1963-07-23 1966-10-20 Siemens Ag Verfahren zur Herstellung eines pn-UEbergangs in einer einkristallinen Halbleiteranordnung
BR6462522D0 (pt) * 1963-10-28 1973-05-15 Rca Corp Dispositivos semicondutores e processo de fabrica-los
GB1071294A (en) * 1963-12-17 1967-06-07 Mullard Ltd Improvements in and relating to the manufacture of transistors
US3327181A (en) * 1964-03-24 1967-06-20 Crystalonics Inc Epitaxial transistor and method of manufacture
US3327136A (en) * 1964-03-30 1967-06-20 Abraham George Variable gain tunneling
US3354009A (en) * 1965-06-29 1967-11-21 Ibm Method of forming a fabricating semiconductor by doubly diffusion
US3418473A (en) * 1965-08-12 1968-12-24 Honeywell Inc Solid state junction device for ultraviolet detection
US3422322A (en) * 1965-08-25 1969-01-14 Texas Instruments Inc Drift transistor
US3463972A (en) * 1966-06-15 1969-08-26 Fairchild Camera Instr Co Transistor structure with steep impurity gradients having fast transition between the conducting and nonconducting state
US3481801A (en) * 1966-10-10 1969-12-02 Frances Hugle Isolation technique for integrated circuits
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
GB1101909A (en) * 1967-01-13 1968-02-07 Standard Telephones Cables Ltd Method for producing gallium arsenide devices
US3488235A (en) * 1967-04-25 1970-01-06 Westinghouse Electric Corp Triple-epitaxial layer high power,high speed transistor
US3663319A (en) * 1968-11-20 1972-05-16 Gen Motors Corp Masking to prevent autodoping of epitaxial deposits
SE372375B (es) * 1970-01-26 1974-12-16 Gen Electric
US3879230A (en) * 1970-02-07 1975-04-22 Tokyo Shibaura Electric Co Semiconductor device diffusion source containing as impurities AS and P or B
US3856578A (en) * 1972-03-13 1974-12-24 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3798079A (en) * 1972-06-05 1974-03-19 Westinghouse Electric Corp Triple diffused high voltage transistor
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA629213A (en) * 1961-10-17 Hoselitz Kurt Manufacture of semi-conductor device
BE509317A (es) * 1951-03-07 1900-01-01
DE1058632B (de) * 1955-12-03 1959-06-04 Deutsche Bundespost Verfahren zur beliebigen Verringerung des Sperrwiderstandes einer Legierungs-elektrode von Halbleiteranordnungen
BE557168A (es) * 1956-05-02
US2899344A (en) * 1958-04-30 1959-08-11 Rinse in
NL229074A (es) * 1958-06-26
BE580254A (es) * 1958-07-17
US3085033A (en) * 1960-03-08 1963-04-09 Bell Telephone Labor Inc Fabrication of semiconductor devices

Also Published As

Publication number Publication date
DE1141724B (de) 1962-12-27
GB966257A (en) 1964-08-06
US3260624A (en) 1966-07-12
DE1141724C2 (de) 1963-07-25
FR1321379A (fr) 1963-03-15
CH415856A (de) 1966-06-30

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