NL274830A - - Google Patents
Info
- Publication number
- NL274830A NL274830A NL274830DA NL274830A NL 274830 A NL274830 A NL 274830A NL 274830D A NL274830D A NL 274830DA NL 274830 A NL274830 A NL 274830A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Bipolar Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US102515A US3204160A (en) | 1961-04-12 | 1961-04-12 | Surface-potential controlled semiconductor device |
US401602A US3418493A (en) | 1961-04-12 | 1964-10-05 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
NL274830A true NL274830A (ru) |
Family
ID=26799459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL274830D NL274830A (ru) | 1961-04-12 |
Country Status (5)
Country | Link |
---|---|
US (2) | US3204160A (ru) |
CH (1) | CH406434A (ru) |
DE (1) | DE1279196B (ru) |
GB (1) | GB954947A (ru) |
NL (1) | NL274830A (ru) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL274830A (ru) * | 1961-04-12 | |||
US3268827A (en) * | 1963-04-01 | 1966-08-23 | Rca Corp | Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability |
US3289009A (en) * | 1963-05-07 | 1966-11-29 | Ibm | Switching circuits employing surface potential controlled semiconductor devices |
US3302076A (en) * | 1963-06-06 | 1967-01-31 | Motorola Inc | Semiconductor device with passivated junction |
GB1082519A (en) * | 1963-06-18 | 1967-09-06 | Plessey Uk Ltd | Multi-emitter transistors and circuit arrangements incorporating same |
GB1070288A (en) * | 1963-07-08 | 1967-06-01 | Rca Corp | Semiconductor devices |
US3328651A (en) * | 1963-10-29 | 1967-06-27 | Sylvania Electric Prod | Semiconductor switching device and method of manufacture |
US3391354A (en) * | 1963-12-19 | 1968-07-02 | Hitachi Ltd | Modulator utilizing an insulated gate field effect transistor |
US3404341A (en) * | 1964-04-03 | 1968-10-01 | Xerox Corp | Electrometer utilizing a dual purpose field-effect transistor |
US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
US3339086A (en) * | 1964-06-11 | 1967-08-29 | Itt | Surface controlled avalanche transistor |
GB1086128A (en) * | 1964-10-23 | 1967-10-04 | Motorola Inc | Fabrication of four-layer switch with controlled breakdown voltage |
GB1129531A (en) * | 1964-12-16 | 1968-10-09 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
DE1514398A1 (de) * | 1965-02-09 | 1969-09-11 | Siemens Ag | Halbleiteranordnung |
US3456168A (en) * | 1965-02-19 | 1969-07-15 | United Aircraft Corp | Structure and method for production of narrow doped region semiconductor devices |
US3397326A (en) * | 1965-03-30 | 1968-08-13 | Westinghouse Electric Corp | Bipolar transistor with field effect biasing means |
US3600648A (en) * | 1965-04-21 | 1971-08-17 | Sylvania Electric Prod | Semiconductor electrical translating device |
US3371290A (en) * | 1965-04-30 | 1968-02-27 | Bell Telephone Labor Inc | Field effect transistor product modulator |
US3461360A (en) * | 1965-06-30 | 1969-08-12 | Ibm | Semiconductor devices with cup-shaped regions |
US3412297A (en) * | 1965-12-16 | 1968-11-19 | United Aircraft Corp | Mos field-effect transistor with a onemicron vertical channel |
US3539839A (en) * | 1966-01-31 | 1970-11-10 | Nippon Electric Co | Semiconductor memory device |
US3407343A (en) * | 1966-03-28 | 1968-10-22 | Ibm | Insulated-gate field effect transistor exhibiting a maximum source-drain conductance at a critical gate bias voltage |
US3463977A (en) * | 1966-04-21 | 1969-08-26 | Fairchild Camera Instr Co | Optimized double-ring semiconductor device |
US3423606A (en) * | 1966-07-21 | 1969-01-21 | Gen Instrument Corp | Diode with sharp reverse-bias breakdown characteristic |
US3432731A (en) * | 1966-10-31 | 1969-03-11 | Fairchild Camera Instr Co | Planar high voltage four layer structures |
US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
US4032956A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Transistor circuit |
JPS57658B2 (ru) * | 1974-04-16 | 1982-01-07 | ||
JPS5714064B2 (ru) * | 1974-04-25 | 1982-03-20 | ||
JPS5711147B2 (ru) * | 1974-05-07 | 1982-03-02 | ||
JPS5712303B2 (ru) * | 1974-05-09 | 1982-03-10 | ||
JPS5722222B2 (ru) * | 1974-05-10 | 1982-05-12 | ||
JPS5648983B2 (ru) * | 1974-05-10 | 1981-11-19 | ||
US4037243A (en) * | 1974-07-01 | 1977-07-19 | Motorola, Inc. | Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data |
US4109169A (en) * | 1976-12-06 | 1978-08-22 | General Electric Company | Avalanche memory triode and logic circuits |
DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
EP0057336A3 (en) * | 1981-01-29 | 1982-08-18 | American Microsystems, Incorporated | Bipolar transistor with base plate |
US4590664A (en) * | 1983-07-29 | 1986-05-27 | Harris Corporation | Method of fabricating low noise reference diodes and transistors |
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
US5594372A (en) * | 1989-06-02 | 1997-01-14 | Shibata; Tadashi | Source follower using NMOS and PMOS transistors |
JP2662559B2 (ja) * | 1989-06-02 | 1997-10-15 | 直 柴田 | 半導体装置 |
US5621336A (en) * | 1989-06-02 | 1997-04-15 | Shibata; Tadashi | Neuron circuit |
GB2239752B (en) * | 1990-01-05 | 1993-10-06 | Plessey Co Plc | An improved mixer circuit |
FR2706620B1 (fr) * | 1993-06-11 | 1995-07-21 | Sgs Thomson Microelectronics | Circuit intégré comportant un circuit de détection du niveau d'une tension de service. |
US5889307A (en) * | 1996-04-29 | 1999-03-30 | Micron Technology, Inc. | Sacrificial discharge device |
WO2012139633A1 (en) * | 2011-04-12 | 2012-10-18 | X-Fab Semiconductor Foundries Ag | Bipolar transistor with gate electrode over the emitter base junction |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE534505A (ru) * | 1953-12-30 | |||
NL202404A (ru) * | 1955-02-18 | |||
US2791761A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Electrical switching and storage |
NL251064A (ru) * | 1955-11-04 | |||
US2918628A (en) * | 1957-01-23 | 1959-12-22 | Otmar M Stuetzer | Semiconductor amplifier |
US3060372A (en) * | 1957-04-02 | 1962-10-23 | Centre Nat Rech Scient | Electrical prospection |
US3097308A (en) * | 1959-03-09 | 1963-07-09 | Rca Corp | Semiconductor device with surface electrode producing electrostatic field and circuits therefor |
US3017613A (en) * | 1959-08-31 | 1962-01-16 | Rca Corp | Negative resistance diode memory |
NL265382A (ru) * | 1960-03-08 | |||
US3112411A (en) * | 1960-05-02 | 1963-11-26 | Texas Instruments Inc | Ring counter utilizing bipolar field-effect devices |
US3090873A (en) * | 1960-06-21 | 1963-05-21 | Bell Telephone Labor Inc | Integrated semiconductor switching device |
NL267831A (ru) * | 1960-08-17 | |||
NL274830A (ru) * | 1961-04-12 | |||
NL293292A (ru) * | 1962-06-11 |
-
0
- NL NL274830D patent/NL274830A/xx unknown
-
1961
- 1961-04-12 US US102515A patent/US3204160A/en not_active Expired - Lifetime
-
1962
- 1962-01-17 GB GB1668/62A patent/GB954947A/en not_active Expired
- 1962-02-06 DE DEF35946A patent/DE1279196B/de active Pending
- 1962-02-12 CH CH167162A patent/CH406434A/de unknown
-
1964
- 1964-10-05 US US401602A patent/US3418493A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB954947A (en) | 1964-04-08 |
DE1279196B (de) | 1968-10-03 |
CH406434A (de) | 1966-01-31 |
US3418493A (en) | 1968-12-24 |
US3204160A (en) | 1965-08-31 |