Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
  • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
  • H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
  • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
  • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
  • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
  • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
  • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/67—Complementary BJTs
  • H10D84/673—Vertical complementary BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
  • H10D89/211—Design considerations for internal polarisation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
  • H10D89/211—Design considerations for internal polarisation
  • H10D89/311—Design considerations for internal polarisation in bipolar devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/95—Circuit arrangements
  • H10F77/953—Circuit arrangements for devices having potential barriers
  • H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/01—Manufacture or treatment
  • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/30—Isolation regions comprising PN junctions
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S136/00—Batteries: thermoelectric and photoelectric
  • Y10S136/291—Applications

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Semiconductor Integrated Circuits (AREA)
• Bipolar Integrated Circuits (AREA)
• Photovoltaic Devices (AREA)
• Bipolar Transistors (AREA)
• Electrodes Of Semiconductors (AREA)
• Light Receiving Elements (AREA)

Applications Claiming Priority (3)

Publications (1)

Family

ID=27258789

Family Applications (3)

Family Applications Before (2)

Country Status (7)

Families Citing this family (9)

Family Cites Families (9)

• 0
  • NL NL281945D patent/NL281945A/xx unknown
  • NL NL270243D patent/NL270243A/xx unknown
  • BE BE621278D patent/BE621278A/xx unknown
  • NL NL270244D patent/NL270244A/xx unknown
• 1960
  • 1960-10-14 GB GB35316/60A patent/GB995727A/en not_active Expired
  • 1960-10-14 GB GB35315/60A patent/GB998165A/en not_active Expired
• 1961
  • 1961-10-10 DE DE19611414858 patent/DE1414858A1/de active Pending
  • 1961-10-10 DE DEJ20636A patent/DE1236077B/de active Pending
  • 1961-10-12 CH CH1183961A patent/CH406431A/de unknown
  • 1961-10-12 US US144649A patent/US3280333A/en not_active Expired - Lifetime
  • 1961-10-12 FR FR875780A patent/FR1308083A/fr not_active Expired
  • 1961-10-13 CH CH1190561A patent/CH406432A/de unknown
• 1962
  • 1962-08-01 DE DEJ22192A patent/DE1279854B/de active Pending
  • 1962-08-06 CH CH934462A patent/CH415857A/de unknown
  • 1962-08-08 FR FR906471A patent/FR82164E/fr not_active Expired

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