NL269311A - - Google Patents
Info
- Publication number
- NL269311A NL269311A NL269311DA NL269311A NL 269311 A NL269311 A NL 269311A NL 269311D A NL269311D A NL 269311DA NL 269311 A NL269311 A NL 269311A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES70427A DE1162329B (de) | 1960-09-20 | 1960-09-20 | Verfahren zum Herstellen von langgestreckten, insbesondere dendritischen Halbleiterkoerpern und Vorrichtung zur Durchfuehrung dieses Verfahrens |
| DES73416A DE1202248B (de) | 1960-09-20 | 1961-04-11 | Verfahren zum Herstellen von bandfoermigen Halbleiterkristallen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL269311A true NL269311A (en:Method) |
Family
ID=25996215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL269311D NL269311A (en:Method) | 1960-09-20 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3293001A (en:Method) |
| CH (2) | CH386395A (en:Method) |
| DE (2) | DE1162329B (en:Method) |
| GB (2) | GB930432A (en:Method) |
| NL (1) | NL269311A (en:Method) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1242578B (de) * | 1960-09-29 | 1967-06-22 | Siemens Ag | Vorrichtung zum Herstellen von bandfoermigen, dendritisch gewachsenen, hochreinen Halbleiterkristallen |
| NL6411697A (en:Method) * | 1963-10-15 | 1965-04-20 | ||
| US3275417A (en) * | 1963-10-15 | 1966-09-27 | Texas Instruments Inc | Production of dislocation-free silicon single crystals |
| US4040890A (en) * | 1975-06-27 | 1977-08-09 | Bell Telephone Laboratories, Incorporated | Neodymium oxide doped yttrium aluminum garnet optical fiber |
| US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
| CN105002556A (zh) * | 2014-04-21 | 2015-10-28 | 洛阳金诺机械工程有限公司 | 一种拉制硅芯时提高硅芯结晶速度的装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE500569A (en:Method) * | 1950-01-13 | |||
| AT194444B (de) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung |
| US2927008A (en) * | 1956-10-29 | 1960-03-01 | Shockley Transistor Corp | Crystal growing apparatus |
| US2897329A (en) * | 1957-09-23 | 1959-07-28 | Sylvania Electric Prod | Zone melting apparatus |
| FR1235341A (fr) * | 1958-03-05 | 1960-07-08 | Siemens Ag | Procédé et appareil de fabrication continue de tiges mono-cristallines minces |
| US3096158A (en) * | 1959-09-25 | 1963-07-02 | Gerthart K Gaule | Apparatus for pulling single crystals in the form of long flat strips from a melt |
-
0
- NL NL269311D patent/NL269311A/xx unknown
-
1960
- 1960-09-20 DE DES70427A patent/DE1162329B/de active Pending
-
1961
- 1961-04-11 DE DES73416A patent/DE1202248B/de active Pending
- 1961-08-04 CH CH915161A patent/CH386395A/de unknown
- 1961-09-19 GB GB33494/61A patent/GB930432A/en not_active Expired
- 1961-09-20 US US139400A patent/US3293001A/en not_active Expired - Lifetime
- 1961-12-19 CH CH1472261A patent/CH401919A/de unknown
-
1962
- 1962-04-11 GB GB13919/62A patent/GB944192A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH401919A (de) | 1965-11-15 |
| GB930432A (en) | 1963-07-03 |
| US3293001A (en) | 1966-12-20 |
| DE1202248B (de) | 1965-10-07 |
| CH386395A (de) | 1965-01-15 |
| DE1162329B (de) | 1964-02-06 |
| GB944192A (en) | 1963-12-11 |