NL268503A - - Google Patents

Info

Publication number
NL268503A
NL268503A NL268503DA NL268503A NL 268503 A NL268503 A NL 268503A NL 268503D A NL268503D A NL 268503DA NL 268503 A NL268503 A NL 268503A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL268503A publication Critical patent/NL268503A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/922Static electricity metal bleed-off metallic stock
    • Y10S428/9335Product by special process
    • Y10S428/934Electrical process
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/922Static electricity metal bleed-off metallic stock
    • Y10S428/9335Product by special process
    • Y10S428/938Vapor deposition or gas diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12444Embodying fibers interengaged or between layers [e.g., paper, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583Component contains compound of adjacent metal
    • Y10T428/1259Oxide

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
NL268503D 1960-12-09 NL268503A (US20090192370A1-20090730-C00001.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74872A US3106489A (en) 1960-12-09 1960-12-09 Semiconductor device fabrication

Publications (1)

Publication Number Publication Date
NL268503A true NL268503A (US20090192370A1-20090730-C00001.png)

Family

ID=22122171

Family Applications (2)

Application Number Title Priority Date Filing Date
NL128768D NL128768C (US20090192370A1-20090730-C00001.png) 1960-12-09
NL268503D NL268503A (US20090192370A1-20090730-C00001.png) 1960-12-09

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL128768D NL128768C (US20090192370A1-20090730-C00001.png) 1960-12-09

Country Status (8)

Country Link
US (1) US3106489A (US20090192370A1-20090730-C00001.png)
JP (1) JPS387274B1 (US20090192370A1-20090730-C00001.png)
BE (1) BE606680A (US20090192370A1-20090730-C00001.png)
CH (1) CH422161A (US20090192370A1-20090730-C00001.png)
DE (1) DE1200439B (US20090192370A1-20090730-C00001.png)
FR (1) FR1298148A (US20090192370A1-20090730-C00001.png)
GB (1) GB991174A (US20090192370A1-20090730-C00001.png)
NL (2) NL268503A (US20090192370A1-20090730-C00001.png)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3261984A (en) * 1961-03-10 1966-07-19 Philco Corp Tunnel-emission amplifying device and circuit therefor
US3376163A (en) * 1961-08-11 1968-04-02 Itek Corp Photosensitive cell
US3518066A (en) * 1962-12-26 1970-06-30 Philips Corp Metallizing non-metals
US3310685A (en) * 1963-05-03 1967-03-21 Gtc Kk Narrow band emitter devices
NL134170C (US20090192370A1-20090730-C00001.png) * 1963-12-17 1900-01-01
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
FR1450654A (fr) * 1965-07-01 1966-06-24 Radiotechnique Perfectionnements aux dispositifs semi-conducteurs de détection de radiations ionisantes
US3390969A (en) * 1966-04-27 1968-07-02 Infrared Ind Inc Noble metal coated ceramic substrate for glass seals and electronic connector elements
US3629776A (en) * 1967-10-24 1971-12-21 Nippon Kogaku Kk Sliding thin film resistance for measuring instruments
US3465211A (en) * 1968-02-01 1969-09-02 Friden Inc Multilayer contact system for semiconductors
US3471756A (en) * 1968-03-11 1969-10-07 Us Army Metal oxide-silicon diode containing coating of vanadium pentoxide-v2o5 deposited on n-type material with nickel electrodes
FR2014594B1 (US20090192370A1-20090730-C00001.png) * 1968-07-15 1974-02-22 Ibm
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US4016589A (en) * 1971-11-10 1977-04-05 Omron Tateisi Electronics Co., Ltd. Semiconductor device
US4011577A (en) * 1972-03-21 1977-03-08 Omron Tateisi Electronics Co. Mechanical-electrical force transducer with semiconductor-insulating layer-tin oxide composite
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
NL163370C (nl) * 1972-04-28 1980-08-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.
US3983284A (en) * 1972-06-02 1976-09-28 Thomson-Csf Flat connection for a semiconductor multilayer structure
JPS5120277B2 (US20090192370A1-20090730-C00001.png) * 1972-08-17 1976-06-23
US3977905A (en) * 1973-02-13 1976-08-31 Communications Satellite Corporation (Comsat) Solar cell with niobium pentoxide anti-reflective coating
CA1017840A (en) * 1973-02-13 1977-09-20 Communications Satellite Corporation Niobium pentoxide anti-reflective coating
US4082568A (en) * 1977-05-10 1978-04-04 Joseph Lindmayer Solar cell with multiple-metal contacts
US4153518A (en) * 1977-11-18 1979-05-08 Tektronix, Inc. Method of making a metalized substrate having a thin film barrier layer
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
US4392010A (en) * 1979-01-16 1983-07-05 Solarex Corporation Photovoltaic cells having contacts and method of applying same
US4235644A (en) * 1979-08-31 1980-11-25 E. I. Du Pont De Nemours And Company Thick film silver metallizations for silicon solar cells
US4471405A (en) * 1981-12-28 1984-09-11 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US4871617A (en) * 1984-04-02 1989-10-03 General Electric Company Ohmic contacts and interconnects to silicon and method of making same
US4702967A (en) * 1986-06-16 1987-10-27 Harris Corporation Multiple-layer, multiple-phase titanium/nitrogen adhesion/diffusion barrier layer structure for gold-base microcircuit interconnection
US5532031A (en) * 1992-01-29 1996-07-02 International Business Machines Corporation I/O pad adhesion layer for a ceramic substrate
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US6690044B1 (en) * 1993-03-19 2004-02-10 Micron Technology, Inc. Approach to avoid buckling BPSG by using an intermediate barrier layer
WO1995002900A1 (en) * 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
US6051879A (en) 1997-12-16 2000-04-18 Micron Technology, Inc. Electrical interconnection for attachment to a substrate
US7637801B2 (en) * 2000-09-28 2009-12-29 Sharp Kabushiki Kaisha Method of making solar cell
US6563185B2 (en) * 2001-05-21 2003-05-13 The Regents Of The University Of Colorado High speed electron tunneling device and applications
JP2006310348A (ja) * 2005-04-26 2006-11-09 Sanyo Electric Co Ltd 積層型光起電力装置
JP2008021750A (ja) * 2006-07-11 2008-01-31 Matsushita Electric Ind Co Ltd 抵抗変化素子およびその製造方法、ならびにそれを用いた抵抗変化型メモリ
JP5191527B2 (ja) * 2010-11-19 2013-05-08 日本発條株式会社 積層体および積層体の製造方法
US9166004B2 (en) 2010-12-23 2015-10-20 Intel Corporation Semiconductor device contacts
CN113223953B (zh) * 2021-03-31 2022-09-27 青岛惠科微电子有限公司 一种快恢复芯片的制造方法、制造设备和快恢复芯片
CN113223944B (zh) * 2021-03-31 2022-09-27 青岛惠科微电子有限公司 一种快恢复芯片的制造方法、制造设备和快恢复芯片
CN113178385B (zh) * 2021-03-31 2022-12-23 青岛惠科微电子有限公司 一种芯片的制造方法、制造设备和芯片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2799600A (en) * 1954-08-17 1957-07-16 Noel W Scott Method of producing electrically conducting transparent coatings on optical surfaces
NL98125C (US20090192370A1-20090730-C00001.png) * 1954-08-26 1900-01-01
DE1067131B (de) * 1954-09-15 1959-10-15 Siemens &. Halske Aktiengesell schatt Berlin und München Verfahren zum Herstellen einer Halbleiteranordnung mit einer zwischen einer Metallschicht und der Oberflache des Halbleiterkristalls erzeugten Randschicht
US2922092A (en) * 1957-05-09 1960-01-19 Westinghouse Electric Corp Base contact members for semiconductor devices
GB829170A (en) * 1957-06-03 1960-02-24 Sperry Rand Corp Method of bonding an element of semiconducting material to an electrode

Also Published As

Publication number Publication date
DE1200439B (de) 1965-09-09
NL128768C (US20090192370A1-20090730-C00001.png)
BE606680A (fr) 1961-11-16
CH422161A (de) 1966-10-15
US3106489A (en) 1963-10-08
JPS387274B1 (US20090192370A1-20090730-C00001.png) 1963-05-28
GB991174A (en) 1965-05-05
FR1298148A (fr) 1962-07-06

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