NL265823A - - Google Patents

Info

Publication number: NL265823A
Authority: NL; Netherlands

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1960-06-13

Publication of NL265823A publication Critical patent/NL265823A/xx

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/129—Pulse doping
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/979—Tunnel diodes

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Ceramic Engineering (AREA)
Photovoltaic Devices (AREA)

NL265823D 1960-06-13 NL265823A (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DES68909A DE1185293B (de)	1960-06-13	1960-06-13	Verfahren zum Herstellen einer Halbleiteranordnung

Publications (1)

Publication Number	Publication Date
NL265823A true NL265823A (ja)

Family

ID=7500602

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL265823D NL265823A (ja)	1960-06-13

Country Status (5)

Country	Link
US (1)	US3208888A (ja)
CH (1)	CH432656A (ja)
DE (1)	DE1185293B (ja)
GB (1)	GB923801A (ja)
NL (1)	NL265823A (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3381114A (en) *	1963-12-28	1968-04-30	Nippon Electric Co	Device for manufacturing epitaxial crystals
US3523046A (en) *	1964-09-14	1970-08-04	Ibm	Method of epitaxially depositing single-crystal layer and structure resulting therefrom
US3502515A (en) *	1964-09-28	1970-03-24	Philco Ford Corp	Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime
US3502516A (en) *	1964-11-06	1970-03-24	Siemens Ag	Method for producing pure semiconductor material for electronic purposes
DE1289833B (de) *	1964-12-29	1969-02-27	Siemens Ag	Verfahren zum epitaktischen Abscheiden einer Halbleiterschicht
DE1287047B (de) *	1965-02-18	1969-01-16	Siemens Ag	Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3522164A (en) *	1965-10-21	1970-07-28	Texas Instruments Inc	Semiconductor surface preparation and device fabrication
US3486949A (en) *	1966-03-25	1969-12-30	Massachusetts Inst Technology	Semiconductor heterojunction diode
US3517643A (en) *	1968-11-25	1970-06-30	Sylvania Electric Prod	Vapor deposition apparatus including diffuser means
US3660180A (en) *	1969-02-27	1972-05-02	Ibm	Constrainment of autodoping in epitaxial deposition
US3603284A (en) *	1970-01-02	1971-09-07	Ibm	Vapor deposition apparatus
US3858548A (en) *	1972-08-16	1975-01-07	Corning Glass Works	Vapor transport film deposition apparatus
US3970037A (en) *	1972-12-15	1976-07-20	Ppg Industries, Inc.	Coating composition vaporizer
US3900345A (en) *	1973-08-02	1975-08-19	Motorola Inc	Thin low temperature epi regions by conversion of an amorphous layer
US4115163A (en) *	1976-01-08	1978-09-19	Yulia Ivanovna Gorina	Method of growing epitaxial semiconductor films utilizing radiant heating
US4075043A (en) *	1976-09-01	1978-02-21	Rockwell International Corporation	Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique
US4326898A (en) *	1978-11-13	1982-04-27	Massachusetts Institute Of Technology	Method for forming material surfaces
US4421576A (en) *	1981-09-14	1983-12-20	Rca Corporation	Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
CN112626615A (zh) *	2020-12-09	2021-04-09	黄梦蕾	一种半导体分立器用硅外延生长扩散辅助设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2702523A (en) *	1947-06-09	1955-02-22	Rene J Prestwood	Apparatus for vapor coating base material in powder form
NL99536C (ja) *	1951-03-07	1900-01-01
DE885756C (de) *	1951-10-08	1953-06-25	Telefunken Gmbh	Verfahren zur Herstellung von p- oder n-leitenden Schichten
US2763581A (en) *	1952-11-25	1956-09-18	Raytheon Mfg Co	Process of making p-n junction crystals
US2817311A (en) *	1955-04-14	1957-12-24	Ohio Commw Eng Co	Catalytic nickel plating apparatus
US2895858A (en) *	1955-06-21	1959-07-21	Hughes Aircraft Co	Method of producing semiconductor crystal bodies
DE1029941B (de) *	1955-07-13	1958-05-14	Siemens Ag	Verfahren zur Herstellung von einkristallinen Halbleiterschichten
BE562490A (ja) *	1956-03-05	1900-01-01
US2879188A (en) *	1956-03-05	1959-03-24	Westinghouse Electric Corp	Processes for making transistors
US2944321A (en) *	1958-12-31	1960-07-12	Bell Telephone Labor Inc	Method of fabricating semiconductor devices
NL256300A (ja) *	1959-05-28	1900-01-01
US3089794A (en) *	1959-06-30	1963-05-14	Ibm	Fabrication of pn junctions by deposition followed by diffusion

0
- NL NL265823D patent/NL265823A/xx unknown
1960
- 1960-06-13 DE DES68909A patent/DE1185293B/de active Pending
1961
- 1961-05-30 CH CH627661A patent/CH432656A/de unknown
- 1961-06-09 US US116039A patent/US3208888A/en not_active Expired - Lifetime
- 1961-06-13 GB GB21279/61A patent/GB923801A/en not_active Expired

Also Published As

Publication number	Publication date
CH432656A (de)	1967-03-31
US3208888A (en)	1965-09-28
GB923801A (en)	1963-04-18
DE1185293B (de)	1965-01-14

Publication	Publication Date	Title
FR1310138A (ja)	1963-03-06
DK120033B (ja)	1971-03-29
FI41800B (ja)	1969-10-31
FI41060B (ja)	1969-04-30
DK130619C (ja)	1975-08-25
DE1142900C2 (ja)	1963-08-08
JPS3810131Y1 (ja)	1963-05-27
DE1412370B2 (ja)	1969-12-18
FI41458B (ja)	1969-07-31
FI41912B (ja)	1969-12-01
FI43990B (ja)	1971-04-30
FI44114B (ja)	1971-06-01
FR1308780A (ja)	1963-02-20
DE1160550C2 (ja)	1964-07-16
FR1561902A (ja)	1969-04-04
FR1590054A (ja)	1970-04-13
DE1115048C2 (ja)	1962-04-19
CS102292B5 (ja)	1961-07-15
BE641767A (ja)	1964-04-16
BE625683A (ja)
BE610140A (ja)
BE609863A (ja)
BE611592A (ja)
BE608732A (ja)
BE611444A (ja)