NL255530A - - Google Patents

Info

Publication number
NL255530A
NL255530A NL255530DA NL255530A NL 255530 A NL255530 A NL 255530A NL 255530D A NL255530D A NL 255530DA NL 255530 A NL255530 A NL 255530A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL255530A publication Critical patent/NL255530A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL255530D 1959-09-11 NL255530A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES64875A DE1278413B (de) 1959-09-11 1959-09-11 Verfahren zum Ziehen duenner stabfoermiger Halbleiterkristalle aus einer Halbleiterschmelze

Publications (1)

Publication Number Publication Date
NL255530A true NL255530A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family

ID=7497558

Family Applications (1)

Application Number Title Priority Date Filing Date
NL255530D NL255530A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1959-09-11

Country Status (6)

Country Link
US (1) US3157472A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH390554A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1278413B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB900562A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL255530A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE301794B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1222476B (de) * 1961-03-09 1966-08-11 Siemens Ag Verfahren zum Herstellen von langgestreckten, insbesondere dendritischen Halbleiterkoerpern durch Ziehen aus einer Schmelze
NL6411697A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-10-15 1965-04-20
US3428436A (en) * 1963-12-16 1969-02-18 Monsanto Co Methods and apparatus for zone melting
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
DE1170150B (de) 1959-04-23 1964-05-14 Siemens Ag Verfahren und Vorrichtung zum Ziehen von stabfoermigen Halbleiterkristallen, insbesondere von Germanium, aus der Schmelze

Also Published As

Publication number Publication date
US3157472A (en) 1964-11-17
CH390554A (de) 1965-04-15
DE1278413B (de) 1968-09-26
GB900562A (en) 1962-07-11
SE301794B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-06-24

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