NL246541A - - Google Patents
Info
- Publication number
- NL246541A NL246541A NL246541DA NL246541A NL 246541 A NL246541 A NL 246541A NL 246541D A NL246541D A NL 246541DA NL 246541 A NL246541 A NL 246541A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US892088XA | 1959-01-20 | 1959-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL246541A true NL246541A (en:Method) |
Family
ID=22216326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL246541D NL246541A (en:Method) | 1959-01-20 |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1188040B (en:Method) |
| FR (1) | FR1244045A (en:Method) |
| GB (1) | GB892088A (en:Method) |
| NL (1) | NL246541A (en:Method) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2939459A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleitereigenschaften aufweisendem, mit antimon hochdotiertem silicium |
| DE2939492A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleitereigenschaften aufweisendem, mit indium hochdotiertem silicium |
| DE10255981A1 (de) * | 2002-11-26 | 2004-06-17 | Forschungsverbund Berlin E.V. | Vorrichtung zum Ziehen von Kristallen nach der Czochralski-Methode |
| CN119456967B (zh) * | 2024-11-14 | 2025-10-03 | 四川大学 | 一种用于微下拉法生长贵金属细丝材和薄片材的复合引棒 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1044768B (de) * | 1954-03-02 | 1958-11-27 | Siemens Ag | Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers |
| NL218610A (en:Method) * | 1956-07-02 |
-
0
- NL NL246541D patent/NL246541A/xx unknown
-
1959
- 1959-12-18 FR FR813533A patent/FR1244045A/fr not_active Expired
- 1959-12-18 DE DEI17405A patent/DE1188040B/de active Pending
-
1960
- 1960-01-19 GB GB1882/60A patent/GB892088A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1188040B (de) | 1965-03-04 |
| FR1244045A (fr) | 1960-10-21 |
| GB892088A (en) | 1962-03-21 |