NL246541A - - Google Patents

Info

Publication number
NL246541A
NL246541A NL246541DA NL246541A NL 246541 A NL246541 A NL 246541A NL 246541D A NL246541D A NL 246541DA NL 246541 A NL246541 A NL 246541A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL246541A publication Critical patent/NL246541A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL246541D 1959-01-20 NL246541A (en))

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US892088XA 1959-01-20 1959-01-20

Publications (1)

Publication Number Publication Date
NL246541A true NL246541A (en))

Family

ID=22216326

Family Applications (1)

Application Number Title Priority Date Filing Date
NL246541D NL246541A (en)) 1959-01-20

Country Status (4)

Country Link
DE (1) DE1188040B (en))
FR (1) FR1244045A (en))
GB (1) GB892088A (en))
NL (1) NL246541A (en))

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939492A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitereigenschaften aufweisendem, mit indium hochdotiertem silicium
DE2939459A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitereigenschaften aufweisendem, mit antimon hochdotiertem silicium
DE10255981A1 (de) * 2002-11-26 2004-06-17 Forschungsverbund Berlin E.V. Vorrichtung zum Ziehen von Kristallen nach der Czochralski-Methode
CN119456967A (zh) * 2024-11-14 2025-02-18 四川大学 一种用于微下拉法生长贵金属细丝材和薄片材的复合引棒

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1134967B (de) * 1954-03-02 1962-08-23 Siemens Ag Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers
NL218610A (en)) * 1956-07-02

Also Published As

Publication number Publication date
GB892088A (en) 1962-03-21
FR1244045A (fr) 1960-10-21
DE1188040B (de) 1965-03-04

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