NL246189A - - Google Patents
Info
- Publication number
- NL246189A NL246189A NL246189DA NL246189A NL 246189 A NL246189 A NL 246189A NL 246189D A NL246189D A NL 246189DA NL 246189 A NL246189 A NL 246189A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES60887A DE1139812B (de) | 1958-12-09 | 1958-12-09 | Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper und Verfahren zum Betrieb dieser Vorrichtung |
DES81031A DE1220391B (de) | 1958-12-09 | 1962-08-22 | Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper |
Publications (1)
Publication Number | Publication Date |
---|---|
NL246189A true NL246189A (es) |
Family
ID=25995608
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL124906D NL124906C (es) | 1958-12-09 | ||
NL295321D NL295321A (es) | 1958-12-09 | ||
NL246189D NL246189A (es) | 1958-12-09 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL124906D NL124906C (es) | 1958-12-09 | ||
NL295321D NL295321A (es) | 1958-12-09 |
Country Status (6)
Country | Link |
---|---|
US (2) | US3134695A (es) |
CH (1) | CH411804A (es) |
DE (1) | DE1220391B (es) |
GB (1) | GB997336A (es) |
NL (3) | NL246189A (es) |
SE (1) | SE309575B (es) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3169892A (en) * | 1959-04-08 | 1965-02-16 | Jerome H Lemelson | Method of making a multi-layer electrical circuit |
NL124906C (es) * | 1958-12-09 | |||
DE1223804B (de) * | 1961-01-26 | 1966-09-01 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium |
DE2050076C3 (de) * | 1970-10-12 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial |
US3756193A (en) * | 1972-05-01 | 1973-09-04 | Battelle Memorial Institute | Coating apparatus |
JPS5656649U (es) * | 1980-06-13 | 1981-05-16 | ||
US4805556A (en) * | 1988-01-15 | 1989-02-21 | Union Carbide Corporation | Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane |
US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1066564B (de) * | 1959-10-08 | Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München | Verfahren zur Herstellung von reinstem Silicium für Halbleiteranordnungen | |
US1439410A (en) * | 1921-06-14 | 1922-12-19 | James H Gray | Refractory material and furnace wall built thereof |
US1912017A (en) * | 1931-09-23 | 1933-05-30 | Owens Illinois Glass Co | Heat insulator |
US2119259A (en) * | 1932-06-15 | 1938-05-31 | Owens Illinois Glass Co | Method of making articles of vitreous material |
US2801607A (en) * | 1952-08-06 | 1957-08-06 | Centre Nat Rech Scient | Apparatus for applying material by thermal vaporization in the manufacture of electrical resistors |
US2845894A (en) * | 1953-03-04 | 1958-08-05 | Oran T Mcilvaine | Metallurgy |
US2828225A (en) * | 1954-03-01 | 1958-03-25 | Sintercast Corp America | Methods of infiltrating high melting skeleton bodies |
NL258754A (es) * | 1954-05-18 | 1900-01-01 | ||
US2927004A (en) * | 1955-05-31 | 1960-03-01 | Bjorksten Res Lab Inc | Preparation of pure silicon or germanium from their alkyls |
US2883269A (en) * | 1955-09-22 | 1959-04-21 | Du Pont | Production of elemental silicon |
US2955466A (en) * | 1955-12-01 | 1960-10-11 | Robertshaw Fulton Controls Co | Test probe |
US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
US2890139A (en) * | 1956-12-10 | 1959-06-09 | Shockley William | Semi-conductive material purification method and apparatus |
US3081201A (en) * | 1957-05-15 | 1963-03-12 | Gen Electric | Method of forming an electric capacitor |
NL124906C (es) * | 1958-12-09 | |||
US2948635A (en) * | 1959-01-12 | 1960-08-09 | Gen Electric | Phosphor evaporation method and apparatus |
DE1082239B (de) * | 1959-05-21 | 1960-05-25 | Licentia Gmbh | Verfahren zum Herstellen von Siliciumstaeben |
NL256255A (es) * | 1959-11-02 | |||
US3098763A (en) * | 1961-05-29 | 1963-07-23 | Raytheon Co | Chemical reactor |
-
0
- NL NL124906D patent/NL124906C/xx active
- NL NL295321D patent/NL295321A/xx unknown
- NL NL246189D patent/NL246189A/xx unknown
-
1959
- 1959-12-08 US US858223A patent/US3134695A/en not_active Expired - Lifetime
-
1962
- 1962-08-22 DE DES81031A patent/DE1220391B/de active Pending
-
1963
- 1963-06-18 CH CH753263A patent/CH411804A/de unknown
- 1963-08-07 US US300586A patent/US3358638A/en not_active Expired - Lifetime
- 1963-08-21 GB GB33063/63A patent/GB997336A/en not_active Expired
- 1963-08-21 SE SE9149/63A patent/SE309575B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
SE309575B (es) | 1969-03-31 |
US3358638A (en) | 1967-12-19 |
CH411804A (de) | 1966-04-30 |
US3134695A (en) | 1964-05-26 |
DE1220391B (de) | 1966-07-07 |
NL295321A (es) | |
NL124906C (es) | |
GB997336A (en) | 1965-07-07 |