NL246189A - - Google Patents

Info

Publication number
NL246189A
NL246189A NL246189DA NL246189A NL 246189 A NL246189 A NL 246189A NL 246189D A NL246189D A NL 246189DA NL 246189 A NL246189 A NL 246189A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL246189A publication Critical patent/NL246189A/xx
Priority claimed from DES60887A external-priority patent/DE1139812B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
NL246189D 1958-12-09 NL246189A (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60887A DE1139812B (de) 1958-12-09 1958-12-09 Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper und Verfahren zum Betrieb dieser Vorrichtung
DES81031A DE1220391B (de) 1958-12-09 1962-08-22 Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper

Publications (1)

Publication Number Publication Date
NL246189A true NL246189A (en:Method)

Family

ID=25995608

Family Applications (3)

Application Number Title Priority Date Filing Date
NL246189D NL246189A (en:Method) 1958-12-09
NL295321D NL295321A (en:Method) 1958-12-09
NL124906D NL124906C (en:Method) 1958-12-09

Family Applications After (2)

Application Number Title Priority Date Filing Date
NL295321D NL295321A (en:Method) 1958-12-09
NL124906D NL124906C (en:Method) 1958-12-09

Country Status (6)

Country Link
US (2) US3134695A (en:Method)
CH (1) CH411804A (en:Method)
DE (1) DE1220391B (en:Method)
GB (1) GB997336A (en:Method)
NL (3) NL124906C (en:Method)
SE (1) SE309575B (en:Method)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
NL246189A (en:Method) * 1958-12-09
DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
DE2050076C3 (de) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
US3756193A (en) * 1972-05-01 1973-09-04 Battelle Memorial Institute Coating apparatus
JPS5656649U (en:Method) * 1980-06-13 1981-05-16
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
JP5477145B2 (ja) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 多結晶シリコン反応炉

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066564B (de) * 1959-10-08 Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München Verfahren zur Herstellung von reinstem Silicium für Halbleiteranordnungen
US1439410A (en) * 1921-06-14 1922-12-19 James H Gray Refractory material and furnace wall built thereof
US1912017A (en) * 1931-09-23 1933-05-30 Owens Illinois Glass Co Heat insulator
US2119259A (en) * 1932-06-15 1938-05-31 Owens Illinois Glass Co Method of making articles of vitreous material
US2801607A (en) * 1952-08-06 1957-08-06 Centre Nat Rech Scient Apparatus for applying material by thermal vaporization in the manufacture of electrical resistors
US2845894A (en) * 1953-03-04 1958-08-05 Oran T Mcilvaine Metallurgy
US2828225A (en) * 1954-03-01 1958-03-25 Sintercast Corp America Methods of infiltrating high melting skeleton bodies
NL113118C (en:Method) * 1954-05-18 1900-01-01
US2927004A (en) * 1955-05-31 1960-03-01 Bjorksten Res Lab Inc Preparation of pure silicon or germanium from their alkyls
US2883269A (en) * 1955-09-22 1959-04-21 Du Pont Production of elemental silicon
US2955466A (en) * 1955-12-01 1960-10-11 Robertshaw Fulton Controls Co Test probe
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
US3081201A (en) * 1957-05-15 1963-03-12 Gen Electric Method of forming an electric capacitor
NL246189A (en:Method) * 1958-12-09
US2948635A (en) * 1959-01-12 1960-08-09 Gen Electric Phosphor evaporation method and apparatus
DE1082239B (de) * 1959-05-21 1960-05-25 Licentia Gmbh Verfahren zum Herstellen von Siliciumstaeben
NL256255A (en:Method) * 1959-11-02
US3098763A (en) * 1961-05-29 1963-07-23 Raytheon Co Chemical reactor

Also Published As

Publication number Publication date
SE309575B (en:Method) 1969-03-31
CH411804A (de) 1966-04-30
US3358638A (en) 1967-12-19
DE1220391B (de) 1966-07-07
US3134695A (en) 1964-05-26
NL124906C (en:Method)
GB997336A (en) 1965-07-07
NL295321A (en:Method)

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