NL242556A - - Google Patents
Info
- Publication number
- NL242556A NL242556A NL242556DA NL242556A NL 242556 A NL242556 A NL 242556A NL 242556D A NL242556D A NL 242556DA NL 242556 A NL242556 A NL 242556A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P50/691—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES59587A DE1094886B (de) | 1958-08-27 | 1958-08-27 | Halbleiteranordnung mit Kollektorelektrode, insbesondere Transistor fuer hohe Frequenzen und grosse Verlustleistung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL242556A true NL242556A (OSRAM) |
Family
ID=7493419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL242556D NL242556A (OSRAM) | 1958-08-27 |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH384720A (OSRAM) |
| DE (1) | DE1094886B (OSRAM) |
| FR (1) | FR1232180A (OSRAM) |
| GB (1) | GB876332A (OSRAM) |
| NL (1) | NL242556A (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL280849A (OSRAM) * | 1961-07-12 | 1900-01-01 | ||
| GB1052661A (OSRAM) * | 1963-01-30 | 1900-01-01 | ||
| US3697829A (en) * | 1968-12-30 | 1972-10-10 | Gen Electric | Semiconductor devices with improved voltage breakdown characteristics |
| JPS58170044A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1036393B (de) * | 1954-08-05 | 1958-08-14 | Siemens Ag | Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren |
| DE1035780B (de) * | 1955-08-29 | 1958-08-07 | Ibm Deutschland | Transistor mit eigenleitender Zone |
-
0
- NL NL242556D patent/NL242556A/xx unknown
-
1958
- 1958-08-27 DE DES59587A patent/DE1094886B/de active Pending
-
1959
- 1959-08-11 FR FR802552A patent/FR1232180A/fr not_active Expired
- 1959-08-19 CH CH7712859A patent/CH384720A/de unknown
- 1959-08-27 GB GB29348/59A patent/GB876332A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB876332A (en) | 1961-08-30 |
| FR1232180A (fr) | 1960-10-06 |
| CH384720A (de) | 1965-02-26 |
| DE1094886B (de) | 1960-12-15 |