NL242556A - - Google Patents

Info

Publication number
NL242556A
NL242556A NL242556DA NL242556A NL 242556 A NL242556 A NL 242556A NL 242556D A NL242556D A NL 242556DA NL 242556 A NL242556 A NL 242556A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL242556A publication Critical patent/NL242556A/xx

Links

Classifications

    • H10P95/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P50/691
NL242556D 1958-08-27 NL242556A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59587A DE1094886B (de) 1958-08-27 1958-08-27 Halbleiteranordnung mit Kollektorelektrode, insbesondere Transistor fuer hohe Frequenzen und grosse Verlustleistung

Publications (1)

Publication Number Publication Date
NL242556A true NL242556A (OSRAM)

Family

ID=7493419

Family Applications (1)

Application Number Title Priority Date Filing Date
NL242556D NL242556A (OSRAM) 1958-08-27

Country Status (5)

Country Link
CH (1) CH384720A (OSRAM)
DE (1) DE1094886B (OSRAM)
FR (1) FR1232180A (OSRAM)
GB (1) GB876332A (OSRAM)
NL (1) NL242556A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280849A (OSRAM) * 1961-07-12 1900-01-01
GB1052661A (OSRAM) * 1963-01-30 1900-01-01
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
JPS58170044A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1036393B (de) * 1954-08-05 1958-08-14 Siemens Ag Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
DE1035780B (de) * 1955-08-29 1958-08-07 Ibm Deutschland Transistor mit eigenleitender Zone

Also Published As

Publication number Publication date
FR1232180A (fr) 1960-10-06
CH384720A (de) 1965-02-26
GB876332A (en) 1961-08-30
DE1094886B (de) 1960-12-15

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