NL241053A - - Google Patents

Info

Publication number
NL241053A
NL241053A NL241053DA NL241053A NL 241053 A NL241053 A NL 241053A NL 241053D A NL241053D A NL 241053DA NL 241053 A NL241053 A NL 241053A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL241053A publication Critical patent/NL241053A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/87Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
NL241053D 1958-07-10 NL241053A (hu)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES58925A DE1136014B (de) 1958-07-10 1958-07-10 Halbleiterdiode fuer Schalt- und Kippzwecke mit vier hintereinanderliegenden halbleitenden Zonen

Publications (1)

Publication Number Publication Date
NL241053A true NL241053A (hu)

Family

ID=7492913

Family Applications (1)

Application Number Title Priority Date Filing Date
NL241053D NL241053A (hu) 1958-07-10

Country Status (6)

Country Link
US (1) US3035213A (hu)
CH (1) CH374772A (hu)
DE (1) DE1136014B (hu)
FR (1) FR1229559A (hu)
GB (1) GB925398A (hu)
NL (1) NL241053A (hu)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3254278A (en) * 1960-11-14 1966-05-31 Hoffman Electronics Corp Tunnel diode device
DE1464669B1 (de) * 1961-03-06 1971-02-04 Itt Ind Gmbh Deutsche Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet
US3131305A (en) * 1961-05-12 1964-04-28 Merck & Co Inc Semiconductor radiation detector
NL300210A (hu) * 1962-11-14

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB707008A (en) * 1948-10-01 1954-04-07 Licentia Gmbh Electric un-symmetrically conductive systems, particularly dry-plate rectifiers
DE926378C (de) * 1948-10-02 1955-04-14 Licentia Gmbh Elektrisch unsymmetrisch leitendes System, insbesondere Trockengleichrichter, mit einer Folge von Halbleiterschichten
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
BE539938A (hu) * 1954-07-21
US2822308A (en) * 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
NL99632C (hu) * 1955-11-22
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device

Also Published As

Publication number Publication date
US3035213A (en) 1962-05-15
CH374772A (de) 1964-01-31
FR1229559A (fr) 1960-09-08
DE1136014B (de) 1962-09-06
GB925398A (en) 1963-05-08

Similar Documents

Publication Publication Date Title
AT214638B (hu)
AT221043B (hu)
AT217439B (hu)
DE1071521C2 (hu)
AT215747B (hu)
AT213908B (hu)
AT213446B (hu)
AT216227B (hu)
AT215751B (hu)
AT219815B (hu)
AT214270B (hu)
AT214348B (hu)
AT213631B (hu)
AT215738B (hu)
AT213558B (hu)
AT213557B (hu)
AT213472B (hu)
AT216612B (hu)
AT216749B (hu)
AT216771B (hu)
AT216803B (hu)
AT216831B (hu)
AT213337B (hu)
AT217982B (hu)
FR74582E (hu)