NL241053A - - Google Patents
Info
- Publication number
- NL241053A NL241053A NL241053DA NL241053A NL 241053 A NL241053 A NL 241053A NL 241053D A NL241053D A NL 241053DA NL 241053 A NL241053 A NL 241053A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES58925A DE1136014B (de) | 1958-07-10 | 1958-07-10 | Halbleiterdiode fuer Schalt- und Kippzwecke mit vier hintereinanderliegenden halbleitenden Zonen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL241053A true NL241053A (xx) |
Family
ID=7492913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL241053D NL241053A (xx) | 1958-07-10 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3035213A (xx) |
| CH (1) | CH374772A (xx) |
| DE (1) | DE1136014B (xx) |
| FR (1) | FR1229559A (xx) |
| GB (1) | GB925398A (xx) |
| NL (1) | NL241053A (xx) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3254278A (en) * | 1960-11-14 | 1966-05-31 | Hoffman Electronics Corp | Tunnel diode device |
| DE1464669B1 (de) * | 1961-03-06 | 1971-02-04 | Itt Ind Gmbh Deutsche | Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet |
| US3131305A (en) * | 1961-05-12 | 1964-04-28 | Merck & Co Inc | Semiconductor radiation detector |
| NL300332A (xx) * | 1962-11-14 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB707008A (en) * | 1948-10-01 | 1954-04-07 | Licentia Gmbh | Electric un-symmetrically conductive systems, particularly dry-plate rectifiers |
| DE926378C (de) * | 1948-10-02 | 1955-04-14 | Licentia Gmbh | Elektrisch unsymmetrisch leitendes System, insbesondere Trockengleichrichter, mit einer Folge von Halbleiterschichten |
| US2623105A (en) * | 1951-09-21 | 1952-12-23 | Bell Telephone Labor Inc | Semiconductor translating device having controlled gain |
| US2793145A (en) * | 1952-06-13 | 1957-05-21 | Sylvania Electric Prod | Method of forming a junction transistor |
| US2875505A (en) * | 1952-12-11 | 1959-03-03 | Bell Telephone Labor Inc | Semiconductor translating device |
| US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
| US2816847A (en) * | 1953-11-18 | 1957-12-17 | Bell Telephone Labor Inc | Method of fabricating semiconductor signal translating devices |
| BE539938A (xx) * | 1954-07-21 | |||
| US2822308A (en) * | 1955-03-29 | 1958-02-04 | Gen Electric | Semiconductor p-n junction units and method of making the same |
| BE551952A (xx) * | 1955-11-22 | |||
| US2878152A (en) * | 1956-11-28 | 1959-03-17 | Texas Instruments Inc | Grown junction transistors |
| US2910634A (en) * | 1957-05-31 | 1959-10-27 | Ibm | Semiconductor device |
-
0
- NL NL241053D patent/NL241053A/xx unknown
-
1958
- 1958-07-10 DE DES58925A patent/DE1136014B/de active Pending
-
1959
- 1959-06-22 US US821787A patent/US3035213A/en not_active Expired - Lifetime
- 1959-07-02 CH CH7522259A patent/CH374772A/de unknown
- 1959-07-07 GB GB23317/59A patent/GB925398A/en not_active Expired
- 1959-07-10 FR FR799947A patent/FR1229559A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH374772A (de) | 1964-01-31 |
| DE1136014B (de) | 1962-09-06 |
| US3035213A (en) | 1962-05-15 |
| GB925398A (en) | 1963-05-08 |
| FR1229559A (fr) | 1960-09-08 |