NL210216A - - Google Patents

Info

Publication number
NL210216A
NL210216A NL210216DA NL210216A NL 210216 A NL210216 A NL 210216A NL 210216D A NL210216D A NL 210216DA NL 210216 A NL210216 A NL 210216A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Family has litigation
Publication of NL210216A publication Critical patent/NL210216A/xx
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24197930&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NL210216(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/036—Diffusion, nonselective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/144—Shallow diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
NL210216D 1955-12-02 NL210216A (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US550622A US2802760A (en) 1955-12-02 1955-12-02 Oxidation of semiconductive surfaces for controlled diffusion

Publications (1)

Publication Number Publication Date
NL210216A true NL210216A (en, 2012)

Family

ID=24197930

Family Applications (2)

Application Number Title Priority Date Filing Date
NL210216D NL210216A (en, 2012) 1955-12-02
NL109817D NL109817C (en, 2012) 1955-12-02

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL109817D NL109817C (en, 2012) 1955-12-02

Country Status (6)

Country Link
US (1) US2802760A (en, 2012)
BE (1) BE550586A (en, 2012)
DE (1) DE1086512B (en, 2012)
FR (1) FR1157894A (en, 2012)
GB (1) GB809644A (en, 2012)
NL (2) NL109817C (en, 2012)

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US3212160A (en) * 1962-05-18 1965-10-19 Transitron Electronic Corp Method of manufacturing semiconductive devices
US3247032A (en) * 1962-06-20 1966-04-19 Continental Device Corp Method for controlling diffusion of an active impurity material into a semiconductor body
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US3255005A (en) * 1962-06-29 1966-06-07 Tung Sol Electric Inc Masking process for semiconductor elements
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US3244567A (en) * 1962-09-10 1966-04-05 Trw Semiconductors Inc Impurity diffusion method
GB1052379A (en, 2012) * 1963-03-28 1900-01-01
US3194701A (en) * 1963-04-01 1965-07-13 Robert P Lothrop Method for forming p-n junctions on semiconductors
US3281915A (en) * 1963-04-02 1966-11-01 Rca Corp Method of fabricating a semiconductor device
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US3281291A (en) * 1963-08-30 1966-10-25 Rca Corp Semiconductor device fabrication
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US3351503A (en) * 1965-09-10 1967-11-07 Horizons Inc Production of p-nu junctions by diffusion
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper
US3468729A (en) * 1966-03-21 1969-09-23 Westinghouse Electric Corp Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity
US3490962A (en) * 1966-04-25 1970-01-20 Ibm Diffusion process
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US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
US3484854A (en) * 1966-10-17 1969-12-16 Westinghouse Electric Corp Processing semiconductor materials
US3532565A (en) * 1967-12-07 1970-10-06 United Aircraft Corp Antimony pentachloride diffusion
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3532539A (en) * 1968-11-04 1970-10-06 Hitachi Ltd Method for treating the surface of semiconductor devices
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US3770521A (en) * 1971-04-14 1973-11-06 Ibm Method for diffusing b or p into s: substrates
US3742904A (en) * 1971-06-03 1973-07-03 Motorola Inc Steam generator and gas insertion device
US3855024A (en) * 1971-11-01 1974-12-17 Western Electric Co Method of vapor-phase polishing a surface of a semiconductor
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US4472212A (en) * 1982-02-26 1984-09-18 At&T Bell Laboratories Method for fabricating a semiconductor device
WO1983003029A1 (en) * 1982-02-26 1983-09-01 Western Electric Co Diffusion of shallow regions
FR2547775B1 (fr) * 1983-06-23 1987-12-18 Metalem Sa Procede de decoration d'un article, application d'un procede de traitement d'un element de silicium, utilisation d'une plaque de silicium traitee et article decore
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KR20110069737A (ko) * 2009-12-17 2011-06-23 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 개선된 반도체 기판 텍스쳐링 방법

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NL34436C (en, 2012) * 1945-04-20
BE500569A (en, 2012) * 1950-01-13
DE1067131B (de) * 1954-09-15 1959-10-15 Siemens &. Halske Aktiengesell schatt Berlin und München Verfahren zum Herstellen einer Halbleiteranordnung mit einer zwischen einer Metallschicht und der Oberflache des Halbleiterkristalls erzeugten Randschicht

Also Published As

Publication number Publication date
FR1157894A (fr) 1958-06-04
DE1086512B (de) 1960-08-04
GB809644A (en) 1959-02-25
BE550586A (en, 2012)
NL109817C (en, 2012)
US2802760A (en) 1957-08-13

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