NL2030410B1

NL2030410B1 - New type of dc generator based on semiconductor/polar liquid/semiconductor dynamic diode and preparation method thereof

Info

Publication number: NL2030410B1
Application number: NL2030410A
Authority: NL
Inventors: Yang Zunshan; Yu Xutao; Lin Shisheng; Lu Yanghua; Yan Yanfei
Original assignee: Univ Zhejiang
Priority date: 2022-01-03
Filing date: 2022-01-03
Publication date: 2023-07-07

Abstract

The present disclosure discloses a new type DC generator based on semiconductor/polar liquid/semiconductor dynamic diode and a preparation method thereof. The present disclosure uses Fermi energy level difference among different semiconductors to polarize the polar liquid, and induces electrons or holes at the semiconductor/ polar liquid interface. During the movement of the polar liquid, new electrons/holes are constantly induced, and old electrons/holes are exported, from. the external to form. direct current. The generator has the advantages of isotropy, low internal resistance, high. power, and, long life, and, the output voltage can be increased greatly by multiple use in series.

Description

P789/NLpd

NEW TYPE OF DC GENERATOR BASED ON SEMICONDUCTOR/POLAR

LIQUID/SEMICONDUCTOR DYNAMIC DIODE AND PREPARATION METHOD THEREOF

TECHNICAL FIELD

The present disclosure relates to the technical field of gen- erator, and relates to a DC generator and manufacturing method thereof, and more particularly, to a new type of DC generator based on semiconductor/polar liquid/semiconductor dynamic diode and manufacturing method thereof.

BACKGROUND ART

In the past two decades, many hydroelectric power generation devices with novel mechanisms have been proposed, such as power generation using water evaporation, power generation using rolling droplets, and power generation using electrodynamic effect. Howev- er, almost all of these devices do not generate direct current, but generate alternating current, wherein the output direction of electricity is highly correlated with the movement direction of the liquid. In practical applications, it is particularly im- portant to deal with continuous DC power generation in a disor- dered motion environment. Thus, there is an urgent need for a high-efficiency hydroelectric power generation device that can generate power at low frequency and disordered motion.

SUMMARY

The objective of the present disclosure is to provide a new type of DC generator based on semiconductor/polar lig- uid/semiconductor dynamic diode that is portable, robust, and sim- ple in process, and preparation method thereof.

The new type DC generator based on semiconductor/polar liq- uid/semiconductor dynamic diode of the present disclosure is pro- vided with a semiconductor layer 1 and a semiconductor layer 2 on both sides of a closed box body, and polar liquid is injected be- tween the two semiconductor layers. The liquid is in contact with the above two semiconductor layers and can flow between them. Both of the two types of semiconductor layers are provided with back electrodes, and the back electrodes are led out of the box body by wires and connected with an external circuit. The semiconductor layer 1 and the semiconductor layer 2 are both selected from sili- con, gallium arsenide, indium gallium arsenide, zinc oxide, germa- nium, cadmium telluride, gallium nitride, indium phosphide, molyb- denum disulfide, black phosphorus, diselenide Tungsten, molybdenum diselenide, molybdenum diselenide, and tungsten disulfide, and there is Fermi energy level difference between semiconductor layer 1 and semiconductor layer 2.

In the above technical solution, the closed plastic box body plays a supporting and sealing role.

The polar liquid is water, methanol, ethanol or other polar solutions.

The back electrode is a composite electrode of one or more of gold, palladium, silver, titanium, chromium and nickel.

The wire is used to conduct current.

The method for preparing the above-mentioned novel DC genera- tor based on semiconductor/polar liquid/semiconductor dynamic di- ode includes the following steps: 1) depositing the back electrode on the semiconductor layer 1 by way of electron beam evaporation coating; 2) performing surface cleaning and drying of the semiconduc- tor layer 1 and its back electrode obtained at step 1); 3) fixing the cleaned semiconductor layer 1 and its back electrode obtained at step 2) on a side wall of the plastic box body, and leading the back electrode connection wire to the exter- nal of the box body; 4) using the same method to fix the cleaned semiconductor layer 2 and its back electrode on the opposite side wall of the plastic box body, and leading the back electrode connecting wire to the outside of the box body; 5) injecting polar liquid between the semiconductor layer 1 and the semiconductor layer 2, and sealing the plastic box.

Compared with the prior art, the present disclosure has the following advantageous effects:

The new type DC generator based on semiconductor/polar lig-

uid/semiconductor dynamic diode of the present disclosure has a unique physical connotation. It uses the Fermi energy level dif- ference between semiconductor 1 and semiconductor 2 to polarize the polar solution, and induces electrons/holes in the contact in- terface of the semiconductor/polar solution. During the movement of the polar liquid, new electrons/holes are continuously induced, and the electrons/holes that are free from the bondage of the po- lar solution are led away from the external and output direct cur- rent. The direction of power generation is not related to the movement direction of the polar liquid, but is only related to the

Fermi energy level difference between the semiconductor layers, so it can cope with disordered and complex moving environments. The output voltage of the generator of the present disclosure is main- ly affected by the moving speed of the liquid, the dielectric con- stant of the polar liquid, and the Fermi energy level difference between the semiconductor 1 and the semiconductor 2. When the mov- ing speed is certain, the output voltage can be designed and changed by replacing the polar liquids with different dielectric constants, or changing the Fermi level difference between semicon- ductor 1 and semiconductor 2. Moreover, through series connection, the output voltage of the generator can be greatly increased. The internal resistance of the device of the present disclosure is at the kiloohm level, which matches well with the impedance of those semiconductor-based information electronic equipments, and it can save a lot of energy loss and output the maximum power, and im- prove the effective utilization of the mechanical energy of the liquid movement. In addition, this kind of dynamic generator with high output power can directly convert the kinetic energy of water droplets into direct current without the need for external recti- fier circuits and energy storage modules. The generator with a novel mechanism presented in the present disclosure has the ad- vantages of reproducibility, low cost, integration, adjustable output voltage, and high conversion efficiency, and so on. It can continuously output direct current in a constant direction, the device structure and process flow are simple, the cost is low, and it has high durability and can be mass-produced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of the structure of a new type

DC generator based on semiconductor/polar liquid/semiconductor dy- namic diodes;

FIG. 2 is a physical diagram of a P-type silicon/water/N-type silicon dynamic diode generator;

FIG. 3 is a schematic diagram of a P-type silicon/water/N- type silicon dynamic diode generator;

FIG. 4 is a graph of output voltage based on P-type sili- con/water/N-type silicon dynamic diode generator.

FIG. 5 is a graph of output current based on P-type sili- con/water/N-type silicon dynamic diode generator.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Refer to FIG. 1, the new type DC generator based on semicon- ductor/polar liquid/semiconductor dynamic diodes of the present disclosure a has plastic layer 1, a semiconductor layer 1, polar liquid, a semiconductor layer 2, and a plastic layer 2 from top to bottom. The semiconductor 1 and the semiconductor 2 are provided with back electrodes, and lead out wires 1 and 2 respectively; the polar liquid can flow between the semiconductor layer 1 and the semiconductor layer 2, and is in contact with both the semiconduc- tor layer 1 and the semiconductor layer 2. The plastic layer 1 and the plastic layer 2 play a supporting role, and the surroundings between the two plastic layers are sealed with plastic to form a closed plastic box (not illustrated in FIG. 1).

Embodiment 1 1) depositing a layer of titanium gold electrode on the back of P-silicon by way of electron beam evaporation coating, with a thickness of 50nm; 2) immersing the samples obtained at step 1) in deionized wa- ter, acetone and isopropanol sequentially to perform surface cleaning treatment; 3) leading the sample obtained at step 2) to the back elec- trode and fixing one side of the back electrode on the cover of a 2-inch sample box; 4) depositing a layer of titanium gold electrode with a thickness of 50nm on the back of N-silicon by way of electron beam evaporation coating; 5) immersing the samples obtained at step 4) in deionized wa- ter, acetone and isopropanol sequentially, and performing surface 5 cleaning treatment; 6) leading the sample obtained at step 5) to the back elec- trode and fixing the back electrode side at the bottom of the 2- inch sample box; 7) pouring deionized water into the sample box and closing the lid of the sample box.

FIG. 2 a physical diagram of a P-type silicon/water/N-type silicon dynamic diode generator. The principle diagram of the gen- erator is as shown in FIG. 3. Take the P-silicon/water/N-silicon dynamic diode generator as an example, after the water molecules in the water contact the silicon substrate, the disorderly ar- ranged water molecules are polarized by the Fermi energy level difference between silicon P-silicon (EF=-5.12eV) and N-silicon (EF=-4.34eV}; negatively charged oxygen atoms approach the P-type semiconductor layer and induce positively charged holes in the P- type silicon layer; positively charged hydrogen atoms approach the

N-type silicon layer and induce negatively charged electrons in the N-type silicon layer; new electrons and holes are continuously induced during the forward movement of the water droplets, and the electrons and holes that are free from the bondage of water mole- cules are led away from the external circuit to form conduction current. FIG. 4 is a graph of output voltage based on P-type sili- con/water/N-type silicon dynamic diode generator. FIG. 5 isa graph of output current based on P-type silicon/water/N-type sili- con dynamic diode generator.

Embodiment 2 1) depositing a layer of chromium-gold electrode on the back of N-silicon by way of electron beam evaporation coating, with a thickness of 50mm; 2) immersing the samples obtained at step 1) in deionized wa- ter, acetone and isopropanol sequentially to perform surface cleaning treatment; 3) leading the sample obtained at step 2) to the back elec-

trode and fixing the back electrode side on the cover of a 2-inch sample box; 4) depositing a layer of chromium-gold electrode on the back of N-gallium arsenide by way of electron beam evaporation coating, with a thickness of 50nm; 5) immersing the samples obtained at step 4) in deionized wa- ter, acetone and isopropanol in sequence, and performing surface cleaning treatment; 6) leading the sample obtained at step 5) to the back elec- trode and fixing a side of the back electrode at the bottom of the 2-inch sample box; 7) pouring ethanol into the sample box and closing the lid of the sample box.

Take the dynamic diode generator based on N-silicon/water/N- gallium arsenide as an example. After the water molecules in the water contact the silicon and gallium arsenide substrates, the disorderly arranged water molecules are polarized by the Fermi en- ergy level difference between N-silicon (EF = -4.34eV) and N- gallium arsenide (EF = -4.07eV); the negatively charged oxygen at- oms approach the N-type silicon and induce positively charged holes in the N-type silicon layer; the positively charged hydrogen atoms approach the N-type gallium arsenide and induce negatively charged electrons in the N-type gallium arsenide; during the for- ward movement of the water droplet, new electrons and holes are continuously induced, and the electrons and water droplets free from the bondage water molecules are led away from the external circuit to form conduction current. Compared with the P-type sili- con/water/N-type silicon dynamic diode generator in Embodiment 1, an N-type semiconductor is used, and the type of the most carriers is electron, and the mobility of electrons in the semiconductor is higher than that of holes. Therefore, the N-silicon/water/N- gallium arsenide dynamic diode generator can output higher cur- rent. Furthermore, in this embodiment, the dynamic diode generator based on N-silicon/ethanol/N-gallium arsenide is produced. Higher current can be output since the polar liquid is changed from water to ethanol with a lower dielectric constant.

Embodiment 3 1) depositing a layer of nickel-gold electrode on the back of

P-gallium arsenide by way of electron beam evaporation coating, with a thickness of 50nm; 2) immersing the samples obtained at step 1) in deionized wa- ter, acetone and isopropanol sequentially to perform surface cleaning treatment; 3) leading the sample obtained at step 2) to the back elec- trode and fixing one side of the back electrode on the cover of the 2-inch sample box; 4) depositing a layer of nickel-gold electrode on the back of

N-silicon by way of electron beam evaporation coating method, with a thickness of 50nm; 5) immersing the samples obtained at step 4) in deionized wa- ter, acetone and isopropanol sequentially, and performing surface cleaning treatment; 6) leading the sample obtained at step 5) to the back elec- trode and fixing one side of the back electrode at the bottom of the 2-inch sample box; 7) pouring methanol into the sample box and sealing the lid of the sample box.

Take the dynamic diode generator based on P-gallium arse- nide/methanol/N-silicon as an example. After methanol contacts the semiconductor, the disorderly arranged methanol molecules are po- larized by the Fermi energy level difference between P-gallium ar- senide (EF=-5.49eV) and N-silicon (EF=-4.34eV); negatively charged

OH- approaches the P-type semiconductor layer and induces posi- tively charged holes in the P-type gallium arsenide layer; posi- tively charged CH 3+ approaches the N-type silicon layer and in- duces negatively charged electrons in the N-type silicon layer; in the process of forward movement of methanol, new electrons and holes are continuously induced, and the electrons and holes free from from the bondage of the methanol molecules are led away from an external circuit to form conduction current. Compared with oth- er embodiments, the use of different semiconductors can increase the Fermi energy level difference between semiconductors, thereby boosting the output voltage; at the same time, since the dielec-

tric constant of methanol used is smaller than that of water, P- gallium arsenide/methanol/N -Silicon dynamic diode generator can output higher voltage.

Embodiment 4 1) Depositing a layer of nickel-gold electrode on the back of

P-gallium nitride by way of electron beam evaporation coating, with a thickness of 50nm; 2) immersing the samples obtained at step 1) in deionized wa- ter, acetone and isopropanol sequentially to perform surface cleaning treatment; 3) leading the sample obtained at step 2) to the back elec- trode and fixing one side of the back electrode on the cover of the 2-inch sample box; 4) depositing a layer of nickel-gold electrode on the back of

N-gallium nitride by way of electron beam evaporation coating method, with a thickness of 50nm; 5) immersing the samples obtained at step 4) in deionized wa- ter, acetone and isopropanol sequentially, and performing surface cleaning treatment; 6) leading the sample obtained ate step 5) to the back elec- trode and fixing one side of the back electrode to the bottom of the 2-inch sample box; 7) pouring ethanol solution into the sample box, and sealing the lid of the sample box.

Take the dynamic diode generator based on P-gallium ni- tride/ethanol/N-gallium nitride as an example. After ethanol con- tacts the semiconductor, the disorderly arranged ethanol molecules are polarized by the Fermi energy level difference between P- gallium nitride (EF=-6.6eV) and N-silicon (EF=-3.3eV); the nega- tively charged OH- approaches the P-type semiconductor layer and induces positively charged holes in the P-type gallium nitride layer; the positively charged C2H5+ approaches the N-type gallium nitride layer and induces negatively charged electrons in the N- type gallium nitride layer; during the forward movement of etha- nol, new electrons and holes are continuously induced, and the electrons and holes free from the bondage of the ethanol molecule are led away from the external circuit to form conduction current.

Compared with other embodiments, the use of wide-bandgap semicon- ductors can increase the Fermi energy level difference between semiconductors, thereby boosting the output voltage; at the same time, since the dielectric constant of ethanol used is small, the

P-gallium nitride/ethanol/N -Gallium nitride dynamic diode genera- tor can output higher voltage.

In addition, through extensive experimental research, the semiconductor layer of the present disclosure can also be selected from any one of indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, tellurium, mo- lybdenum, molybdenum diselenide, and tungsten disulfide. The pre- pared samples can all produce direct current output, and the spe- cific preparation method is not repeated. Those skilled in the art can realize it according to the description of the technical solu- tions of the present disclosure.

Claims

CONCLUSIONS

A new type of semiconductor/polar liquid/semiconductor dynamic diode based DC generator, wherein: semiconductor layer 1 and semiconductor layer 2 are disposed on both sides of a closed box body, respectively; polar liquid is injected between the two semiconductor layers, and is in contact with the two semiconductor layers and can flow between the two semiconductor layers; wherein the two semiconductor layers are provided with back electrodes, which are led via wires to the outside of the box; wherein the semiconductor layer 1 and the semiconductor layer 2 are both selected from silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum diselenide, molybdenum diselenide, molybdenum diselenide, and tungsten disulfide, and there is a Fermi energy level difference between the semiconductor layer 1 and the semiconductor layer 2.

A new type of semiconductor/polar liquid/semiconductor dynamic diode DC generator according to claim 1, wherein the polar liquid is water, methanol, ethanol or other polar solutions.

The novel type semiconductor/polar liquid/semiconductor dynamic diode based DC generator according to claim 1, wherein the back electrode is compound electrodes of one or more of gold, palladium, silver, titanium, chromium and nickel.

The novel type semiconductor/polar liquid/semiconductor dynamic diode based DC generator according to any one of claims 1 to 3, comprising the steps of: 1) depositing the back electrode on the semiconductor layer 1 by electron beam evaporation coating; 2) performing surface cleaning and drying of the semi-

conductor layer 1 obtained in step 1}; 3) fixing the semiconductor layer 1 and its rear electrode obtained in step 2) on a side wall of the plastic box body, and leading the bonding wire out of the box

body; 4) using the same method to fix the semiconductor layer 2 and its back electrode on the opposite side wall of the plastic box body, and leading the bonding wire out of the box body;

5) injecting polar liquid between the semiconductor layer 1 and the semiconductor layer 2, and sealing the plastic box.