NL2023649B1 - Spectral Purity Filter - Google Patents

Spectral Purity Filter Download PDF

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Publication number
NL2023649B1
NL2023649B1 NL2023649A NL2023649A NL2023649B1 NL 2023649 B1 NL2023649 B1 NL 2023649B1 NL 2023649 A NL2023649 A NL 2023649A NL 2023649 A NL2023649 A NL 2023649A NL 2023649 B1 NL2023649 B1 NL 2023649B1
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Netherlands
Prior art keywords
spectral purity
purity filter
zeolite
dimensional template
filter
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NL2023649A
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Dutch (nl)
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NL2023649A (en
Inventor
Aleksandrovich Nasalevich Maxim
Kurganova Evgenia
Van Zwol Pieter-Jan
Willem Notenboom Arnoud
Péter Mária
Ferdinand Vles David
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Asml Netherlands Bv
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A method of manufacturing a pellicle for a lithographic apparatus, said method comprising growing the pellicle in a three-dimensional template and pellicles manufactured according to this method. Also disclosed is the use of a pellicle manufactured according to the method in an EUV lithography apparatus as well as the use of a three-dimensional template in the manufacture of a pellicle.

Description

Spectral Purity Filter
FIELD
[0001] The present invention relates to a method of manufacturing a spectral purity filter for a lithographic apparatus, the use of a spectral purity filter made according to tire method of manufacturing, the use of a three-dimensional template to manufacture a spectral purity filter for a lithographic apparatus, and a spectral purity filter for use in a lithographic apparatus.
BACKGROUND
[0002] A lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus may for example project a pattern from a patterning device (e.g. a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate.
[0003] The wavelength of radiation used by a lithographic apparatus to project a pattern onto a substrate detennines the minimum size of features which can be formed on that substrate. A lithographic apparatus which uses EUV radiation, being electromagnetic radiation having a w avelength within the range 4-20 nm, may be used to fonn smaller features on a substrate than a conventional lithographic apparatus (w hich may for example use electromagnetic radiation with a wavelength of 193 nm).
[0004] A lithographic apparatus includes a patterning device (e.g. a mask or reticle). Radiation is provided th ough or reflected off the patterning device to form an image on a substrate. A pellicle may be provided to protect the patterning device from airborne particles and other forms of contamination. Contamination on the surface of the patterning device can cause manufacturing defects on the substrate. [0005] Pellicles may also be provided for protecting optical components other than patterning devices. Pellicles may also be used to provide a passage for lithographic radiation between regions of the lithography apparatus which are sealed from one another. Pellicles may also be used as filters, such as spectral purity filters. Due to the sometimes harsh environment inside a lithography apparatus, particularly an EUV lithography apparatus, pellicles are required to demonstrate excellent chemical and thermal stability.
[0006] Known pellicles may comprise, for example, a freestanding membrane such as a silicon membrane, silicon nitride, graphene or graphene derivatives, carbon nanotube, or other membrane materials. A mask assembly may include the pellicle which protects a patterning device (e.g. a mask) from particle contamination. The pellicle may be supported by a pellicle frame, forming a pellicle assembly. The pellicle may be attached to the frame, for example, by gluing a pellicle border region to die frame. The frame may be permanently or releasably attached to a patterning device.
[0007] During use, the temperature of a pellicle in a lithographic apparatus increases to anywhere from around 500 up to 1000°C or higher. These high temperatures can damage the pellicle and it is therefore desirable to improve ways by which to dissipate the heat in order to lower the operating temperature of the pellicle and improve pellicle lifespan.
[0008] ft has been found that the lifetime of carbonaceous pellicles, such as pellicles comprising freestanding graphene membranes or other carbon-based membranes, may be limited and that carbonbased pellicles may suffer from particular disadvantages when used in a lithographic apparatus.
[0009] Graphene pellicles comprise one or more parallel, thin layers of graphene. Such pellicles are for example around 6 to around 10 nm thick and may demonstrate high density. Due to the structure of such graphene pellicles the uniformity7 of the EUV radiation passing through the pellicle is not substantially altered. However, depending on the way in which they are manufactured, some graphene pellicles may have relatively low mechanical strength. Although graphene is one of, if not the, strongest materials known, roughness on the surface of the graphene layers caused by the substrates on which the graphene pellicles are produced negatively impacts the strength of the pellicle. During use of a pellicle, the lithographic apparatus in which the pellicle is used may be flushed with a gas. Also, during exposure the pellicle will undergo a substantial heat load from the EUV radiation. Stress variations of the pellicle induced by such factors can result in damage to the pellicle if it is not sufficiently strong. The pellicle may break and contaminate various parts of the lithogr aphic apparatus, which is undesirable.
[00010] Another type of carbonaceous pellicle is based on carbon nanotubes. Such pellicles do not have the same dense, parallel layer structure as multi-layer graphene pellicles, but are rather formed of a network of carbon nanotubes in a mesh. The boundaries of carbon nanotube-based pellicles are less defined than the boundaries of multi-layer graphene pellicles and the carbon nanotubes can alter the uniformity7 of the radiation beam passing through the pellicle, for example due to scattering. This is undesirable as the variance in the uniformity7 of the radiation beam can be reflected in the final product. Given the extremely high precision required by a lithography machine, even small differences in the uniformity7 of the radiation beam can result in decreased exposure performance. However, a benefit of pellicles based on carbon nanotubes is that they are strong and so they can meet the strength requirements for use in a lithographic apparatus.
[00011] It is therefore desirable to provide a method for manufacturing a carbonaceous pellicle that is sufficiently strong to be able to be used in a lithographic apparatus, such as an EUV lithographyapparatus, and which also has high EUV transmissivity7, for example of more than 90%, and which does not adversely affect the uniformity of the radiation beam passing through the pellicle.
[00012] Whilst the present application generally refers to pellicles in the context of lithography apparatus, in particular EUV lithography apparatus, the invention is not limited to only pellicles and lithography apparatus and it is appreciated that the subject matter of the present invention may be used in any other suitable apparatus or circumstances.
[00013] For example, the methods of the present invention may equally be applied to spectral purity7 filters. EUV sources, such as those which generate EUV radiation using a plasma, in practice do not only emit desired ‘in-band’ EUV radiation, but also undesirable (out-of-band) radiation. This out-ofj band radiation is most notably in the deep UV (DUV) radiation range (from 100 to 400 nm). Moreover, in the case of some EUV sources, for example laser produced plasma EUV sources, the radiation emitted from the laser, for example at 10.6 microns, may be a source of out-of-band radiation (e.g. IR radiation).
[00014] A spectral purity filter may be used as a pellicle, and vice versa. Therefore, reference in the present application to a ‘pellicle' is also reference to a ‘spectral purity filter. Although reference is primarily made to pellicles in the present application, all of the features could equally be applied to spectral purity' filters.
[00015] In a lithographic apparatus, spectral purity may be desired for several reasons. One reason is that resist is sensitive to out of-band wavelengths of radiation, and thus the image quality of exposure patterns applied to the resist may be deteriorated if the resist is exposed to such out-of-band radiation. Furthermore, out-of-band radiation, for example infrared radiation in some laser produced plasma sources, leads to unwanted and unnecessary heating of the patterning device, substrate, and optics within the lithographic apparatus. Such heating may lead to damage of these elements, degradation in their lifetime, and/or defects or distortions in patterns projected onto and applied to a resist-coated substrate.
[00016] In a lithographic apparatus (and/or method) it is desirable to minimise the losses in intensity of radiation which is being used to apply a pattern to a resist coated substrate. One reason for this is that, ideally, as much radiation as possible should be available for applying a pattern to a substrate, for instance to reduce the exposure time and increase throughput. At the same time, it is desirable to minimise the amount of undesirable radiation (e.g. out-of-band) radiation that is passing through the lithographic apparatus and which is incident upon the substrate. Furthermore, it is desirable to ensure that a spectral purity filter used in a lithographic method or apparatus has an adequate lifetime, and does not degrade rapidly over time as a consequence of the high heat load to which die spectral purity filter may be exposed, and/or the hydrogen (or the like, such as free radical species including H* and HO*) to which die spectral purity filter may be exposed. It is therefore desirable to provide an improved (or alternative) spectral purity filter, and for example a spectral purity filter suitable for use in a lithographic apparatus and/or method.
SUMMARY
[00017] The present invention has been made in consideration of the aforementioned problems with known methods of manufacturing pellicles and with known pellicles, but mat equally be applied to spectral purity filters.
[00018] According to a first aspect of the present invention, there is provided a method of manufacturing a pellicle for a lithographic apparatus, said method comprising: growing the pellicle in a three-dimensional template material.
[00019] Known carbon-based pellicles are currently based effectively on solid, layered 2 dimensional materials. For example, graphene pellicles comprise multiple layers of graphene. Similarly, silicon pellicles are manufactured on solid silicon wafers, which may or may not be coated with other protective cap layer materials, such as metals. As such, these pellicle materials are grown as layers on surfaces, which are two-dimensional, and are solid, or have very little voids within them (i.e. a low porosity). On the other hand, pellicles based on carbon nanotubes comprise a disordered mesh of carbon nanotubes which have significant void space within them, but are disordered, which negatively impacts on the uniformity of the radiation beam passing through due to scattering. It is desirable to provide a pellicle with a regular and well-defined three-dimensional structure.
[00020] It has been found that manufacturing a spectral purity filter within a three-dimensional template provides a spectral purity filter with a regular and well-defined three dimensional structure. The structure of the spectral purity filters manufactured according to the method of the present invention is also porous, as with carbon nanotube spectral purity filters, but has a more regular and well-defined three dimensional structure which provides sufficient strength to be used in a lithography apparatus, and enough flexibility to accommodate changes in temperatures and stress on the spectral purity filter. It has been surprisingly found that the resulting spectral purity filter has acceptable EUV transmissivity of greater than 90%and does not adversely affect the uniformity of the radiation beam passing through. [00021] The three-dimensional template may be a zeolite. Zeolites are microporous, aluminosilicate materials which are commonly used as adsorbents and catalysts. These have regular internal pore structures into which small molecules are able to pass.
[00022] The zeolite may be any suitable zeolite. For example, the zeolite may be Zeolite A, Zeolite Beta, mordenite. Zeolite Y, or chabazite. These are the most commonly used and most readily available zeolites, although it will be appreciated that other zeolites are also considered to be suitable for the present invention.
[00023] The zeolite may be a modified zeolite. The modified zeolite may comprise zeolite which has been doped with a suitable material. Suitable materials include one or more of lanthanum, zinc, molybdenum, yttrium, calcium, tungsten, vanadium, titanium, niobium, chromium, tantalum, and hafnium. It has been surprisingly found that by doping the zeolite with one or more of these elements decreases the temperature at which carbonization is able to occur within the pores of the zeolite. The doping can be carried out by any suitable means, such as ion exchange. For example, sodium ions in the zeolite may be exchanged with lanthanum ions.
[00024] The method may comprise providing a carbon source, preferably a gaseous carbon source. The carbon source may be passed into the three-dimensional template material. Since die threedimensional template comprises an internal network of pores, the carbon source material is able to impregnate the three dimensional template.
[00025] The carbon source may be a saturated or unsaturated Cl to C4 hydrocarbon. It is possible to use hydrocarbons having more than four carbon atoms, but the absorption process is slower since these are liquid at ambient temperatures. Of course, if the absorption into the three dimensional template took place at temperatures above ambient, longer chain hydrocarbons may be used. The hydrocarbons are preferably linear.
[00026] Examples of suitable carbon sources include methane, ethane, ethane, ethyne, propane, propene, propadiene, propyne, butane, butene, butadiene, butadiene, and butyne. Since the carbon source is intended to be primarily for the provision of carbon, it is preferable to use unsaturated hydrocarbons as these have advantageous carbon to hydrogen ratios and are more reactive that saturated hydrocarbons. For example, a preferred carbon source is ethyne as it is most reactive and is also small, so is able to diffuse into the three dimensional template easily.
[00027] The method may comprise heating the three dimensional template material up to a first temperature to carbonise the carbon source. Once the carbon source has been passed into the internal pores of the three dimensional template, heating the material causes it to carbonise. The carbonization process is enhanced by the aforementioned doping of the three dimensional material with metal ions. The metal ions are selected as they form strong carbide bonds. Without the doping, tire temperature required to carbonise the carbon source is much greater and results in carbon only forming on the surface of the three dimensional template and does not form a carbonaceous network which substantially corresponds to the internal pore structure of the three dimensional material in which the carbon source is contained.
[00028] The first temperature may be from around 35ÖC to around 800C, and preferably around 650C. Without doping, temperatures in excess of800C are required for carbonization.
[00029] The three dimensional material may subsequently be heated to a second temperature which is higher than the first temperature. The second temperature may be around 850C or more. Heating to the second, higher temperature causes the carbon to become more highly ordered and therefore stronger. [00030] Once die heating has been completed, the carbonaceous spectral purity filter is retrieved by dissolving the three dimensional template. Where the three-dimensional template is a zeolite, the zeolite may be dissolved by exposure to a strong acid, such as hydrochloric acid or hydrofluoric acid, and may subsequently be exposed to a hot basic solution, such as sodium hydroxide. The exact method for dissolving the zeolite is not restricted to the examples given, and any suitable method which dissolves the zeolite whilst leaving die carbonaceous spectral purity filter may be used.
[00031] The three dimensional material may be prepared from a silicon wafer by known means. Preferably, the silicon wafer is single crystal silicon. The preparation from a silicon wafer allows the exact thickness and nature of the zeolite to be controlled. Thus, different zeolites can be prepared depending on the exact nature of the spectral purity filter required, with some having larger pores and others having smaller pores.
[00032] A portion of the surface of the silicon wafer may be converted to a zeolite material, or a zeolite material may be prepared on the surface of a silicon wafer. Both techniques are known in die art. The thickness of the zeolite may be from around 50 to around 150 nm, from around 80 nm to around 120 nm, and preferably around 100 nm. If the zeolite is too thin, the resulting spectral purity filter may not be thick enough to have the necessary strength to be used in an EUV lithography apparatus. On the other hand, if the zeolite is too thick, the resulting spectral purity filter may be too thick and have undesirably low EUV transmissivity, such as, for example, less than 90%. The exact thickness of the spectral purity7 filter can be achieved by removing material from a spectral purity filter until the desired thickness is met.
[00033] According to a second aspect of the present invention, there is provided the use of a threedimensional template in the manufacture of a spectral purity7 filter.
[00034] As described above, currently know pellicles are manufactured by forming two dimensional layers on surfaces. There is no known pellicle which is produced inside a threedimensional template. The use of a three dimensional template allows a pellicle or spectral purity7 filter with a very7 regular and predictable structure to be formed. The resulting pellicle respectively spectral purity7 filter is stronger than existing graphene pellicles respectively spectral purity7 filters, and does not cause unwanted diffraction or scattering of the radiation beam as is the case with carbon nanotubebased pellicles respectively spectral purity· filters.
[00035] The three-dimensional template may be any zeolite described in relation to the first aspect of the present invention.
[00036] According to a third aspect of the present invention, there is provided a three-dimensional template for die manufacture of a spectral purity filter.
[00037] Preferably, the spectral purity7 filter is a carbonaceous spectral purity7 filter.
[00038] Preferably, the three-dimensional template is a zeolite as described with reference to the first aspect of the present invention.
[00039] According to a fourth aspect of the present invention, there is provided a spectral purity7 filter having a three-dimensional structure which substantially corresponds to the internal pore structure of a zeolite. The spectral purity7 filter is preferably carbonaceous.
[00040] Since there is no known pellicle which is manufactured using a three-dimensional template, there is no known pellicle which has a three-dimensional structure which substantially corresponds to the internal pore structure of a zeolite. As described above, this provides a pellicle or spectral purity7 filer which is strong and does not interfere with die uniformity of a radiation beam passing through the pellicle respectively spectral purity7 filter.
[00041] According to a fifth aspect of the present invention, there is provided a spectral purity filter for a lithographic apparatus obtained or obtainable by the method according to the first aspect of the present invention.
[00042] Due to limitations of known method of manufacturing pellicles and the absence of any pellicles made using a three-dimensional template, until now, there has been no way of making a pellicle or pectral purity7 filter having a regular three-dimensional ordering which is strong enough for use in a lithographic apparatus.
[00043] According to a sixth aspect of the present invention, there is provided the use of a spectral purity filter manufactured according to a method of the first aspect of the present invention, or according to the fourth or fifth aspects of the present invention in a lithographic apparatus.
[00044] In summan . the methods of the present invention allow for the manufacture of a spectral purity filter, in particular a carbonaceous spectral purity' filter, which is suitable for use in an EUV lithographic apparatus. It has not been previously possible to manufacture such a spectral purity filter. The spectral purity' filters manufactured according to the methods of the present invention are able to resist the high temperatures achieved when the spectral purity filter is in use and also withstand mechanical forces on die spectral purity filter during use of the lithographic apparatus which would damage known spectral purity filters. Furthermore, having a spectral purity filter with a regular threedimensional structure means that the uniformity of the radiation beam is not adversely affected when passing through the spectral purity filter. It is believe that the three dimensional structure which substantially corresponds to the internal pore structure of a zeolite provides the spectral purity filter with sufficient strengdr to be used in a lithographic apparatus, but also enough flexibility to withstand any temperature and/or pressure changes during use.
[00045] The present invention will now be described further with reference to a carbonaceous pellicle which is formed within the pore structure of a zeolite. However, it will be appreciated that the present invention is not limited to pellicles and is equally applicable to spectral purity filters. In addition, due to die high surface area of the resulting material, it could also be used in charge storage devices, such as batteries or capacitors. Thus, although the methods, uses, and products are described in the context of pellicles and lithography, it will be appreciated that such methods, uses, and products could also be used in the manufacture of components for batteries and capacitors.
BRIEF DESCRIPTION OF THE DRAWINGS
[00046] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawing, in which:
Figure 1 depicts a lithographic system comprising a lithographic apparatus and a radiation source according to an embodiment of the invention.
DETAILED DESCRIPTION
[00047] Figure 1 shows a lithographic system including a pellicle 15 according to the fourth and fifth aspects of the present invention or manufactured according to the methods of the first aspect of the present invention according to one embodiment of the invention. The lithographic system comprises a radiation source SO and a lithographic apparatus LA. The radiation source SO is configured to generate an extreme ultraviolet (EUV) radiation beam B. The lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (e.g. a mask), a projection system PS and a substrate table WT configured to support a substrate W. The illumination system IL is configured to condition the radiation beam B before it is incident upon the patterning device MA. The projection system is configured to project tire radiation beam B (now patterned by the mask MA) onto the substrate W. The substrate W may include previously formed patterns. Where this is the case, the lithographic apparatus aligns the patterned radiation beam B with a pattern previously formed on the substrate W. In this embodiment, the pellicle 15 is depicted in the path of the radiation and protecting the patterning device MA. It will be appreciated that the pellicle 15 may be located in any required position and may be used to protect any of the mirrors in the lithographic apparatus.
[00048] The radiation source SO, illumination system IL. and projection system PS may all be constructed and arranged such that they can be isolated from the external environment. A gas at a pressure below atmospheric pressure (e.g. hydrogen) may be provided in the radiation source SO. A vacuum may be provided in illumination system IL and/or the projection system PS. A small amount of gas (e.g. hydrogen) at a pressure well below atmospheric pressure may be provided in the illumination system IL and/or the projection system PS.
[00049] The radiation source SO shown in Figure 1 is of a type which maybe referred to as a laser produced plasma (LPP) source). A laser 1, which may for example be a CO? laser, is arranged to deposit energy via a laser beam 2 into a fuel, such as tin (Sn) which is provided from a fuel emitter 3. Although tin is referred to in the following description, any suitable fuel may be used. The fuel may for example be in liquid form, and may for example be a metal or alloy. The fuel emitter 3 may comprise a nozzle configured to direct tin. e.g. in the form of droplets, along a trajectory towards a plasma formation region 4. The laser beam 2 is incident upon the tin at the plasma formation region 4. The deposition of laser energy into the tin creates a plasma 7 at the plasma formation region
4. Radiation, including EUV radiation, is emitted from the plasma 7 during de-excitation and recombination of ions of the plasma.
[00050] The EUV radiation is collected and focused by a near normal incidence radiation collector 5 (sometimes referred to more generally as a normal incidence radiation collector). The collector 5 may have a multilayer structure which is arranged to reflect EUV radiation (e.g. EUV radiation having a desired wavelength such as 13.5 nm). The collector 5 may have an elliptical configuration, having two ellipse focal points. A first focal point may be at the plasma formation region 4, and a second focal point may be at an intermediate focus 6, as discussed below.
[00051] The laser 1 may be separated from the radiation source SO. Where this is the case, the laser beam 2 may be passed from the laser 1 to the radiation source SO with the aid of a beam delivery system (not shown) comprising, for example, suitable directing mirrors and/or a beam expander, and/or other optics. The laser 1 and the radiation source SO may together be considered to be a radiation system.
[00052] Radiation that is reflected by the collector 5 forms a radiation beam
B. The radiation beam B is focused at point 6 to form an image of the plasma formation region 4, which acts as a virtual radiation source for the illumination system IL. The point 6 at which tire radiation beam B is focused may be referred to as the intermediate focus. The radiation source SO is arranged such that the intermediate focus 6 is located at or near to an opening 8 in an enclosing structure 9 of the radiation source.
[00053] The radiation beam B passes from the radiation source SO into the illumination system IL. which is configured to condition the radiation beam. The illumination system IL may include a facetted field mirror device 10 and a facetted pupil mirror device 11. The faceted field mirror device 10 and faceted pupil minor device 11 together provide the radiation beam B with a desired cross-sectional shape and a desired angular distribution. The radiation beam B passes from the illumination system IL and is incident upon the patterning device MA held by the support structure MT. The patterning device MA reflects and patterns the radiation beam B. The illumination system IL may include other mirrors or devices in addition to or instead of the faceted field minor device 10 and faceted pupil mirror device
11.
[00054] Following reflection from the patterning device MA the patterned radiation beam B enters the projection system PS. The projection system comprises a plurality- of minors 13, 14 which are configured to project the radiation beam B onto a substrate W held by the substrate table WT. The projection system PS may apply a reduction factor to the radiation beam, forming an image with features that are smaller than conesponding features on the patterning device MA. A reduction factor of 4 may for example be applied. Although the projection system PS has two mirrors 13, 14 in Figure 1, the projection system may include any number of minors (e.g. six mirrors).
[00055] The radiation sources SO shown in Figure 1 may include components which are not illustrated. For example, a spectral filter may be provided in the radiation source. The spectral filter may be substantially transmissive for EUV radiation but substantially blocking for other wavelengths of radiation such as infrared radiation.
[00056] In an exemplary method according to die present invention, a three dimensional template in the form of a zeolite is provided. This may have been formed based on a silicon wafer or by any other suitable means. The exemplary- zeolite is Zeolite-Y in which at least a portion of the sodium ions has been exchanged with lanthanum ions via ion exchange. A carbon source comprising ethyne gas is passed over the zeolite and the ethyne gas is allowed to diffuse into the internal pores of the zeolite. The zeolite is heated to around 65 0C in order to carbonise the ethyne gas and form a carbon structure inside of the zeolite which substantially corresponds to the internal structure of the zeolite. Following this, the zeolite is heated to around 850C in order to provide a more highly ordered carbonaceous pellicle. The zeolite is then dissolved by dissolution in hydrofluoric acid in order to recover the pellicle. [00057] In this way, it is possible to control the structure of the resulting pellicle and use different zeolites with different sizes to modify the exact structure of the pellicle. The resulting pellicle has EUV transmissivity of greater than 90% and is strong enough for use in a lithographic apparatus.
[00058] The term EUV radiation” may be considered to encompass electromagnetic radiation having a wavelength within die range of 4-20 nm, for example within the range of 13-14 nm. EUV radiation may have a wavelength of less than 10 nm, for example within the range of 4-10 nm such as
6.7 nm or 6.8 nm.

Claims (34)

CONCLUSIESCONCLUSIONS 1. Een werkwijze voor het vervaardigen van een spectraal zuiverheidsfilter voor een lithografisch apparaat, waarbij de werkwijze omvat: het groeien van het spectrale zuiverheidsfilter in een driedimensionale sjabloon met een regelmatige interne poriën structuur.A method of manufacturing a spectral purity filter for a lithographic apparatus, the method comprising: growing the spectral purity filter in a three-dimensional template with a regular internal pore structure. 2. Werkwijze volgens conclusie 1, waarbij het sjabloon een zeoliet is.The method of claim 1, wherein the template is a zeolite. 3. Werkwijze volgens conclusie 2. waarbij het zeoliet wordt gekozen uit zeoliet A, zeoliet beta, mordeniet, zeoliet Y, ZSM-5 en chabaziet.The method of claim 2. wherein the zeolite is selected from zeolite A, zeolite beta, mordenite, zeolite Y, ZSM-5 and chabazite. 4. Werkwijze volgens conclusie 2 of 3, waarbij het zeoliet een gemodificeerd zeoliet is.The method of claim 2 or 3, wherein the zeolite is a modified zeolite. 5. Werkwijze volgens conclusie 4, waarbij het gemodificeerd zeoliet zeoliet omvat, gedoteerd met één of meer van lanthaan, zink, molybdeen, yttrium, calcium, wolfraam, vanadium, titanium, niobium, chroom, tantaal en hafnium.The method of claim 4, wherein the modified zeolite comprises zeolite doped with one or more of lanthanum, zinc, molybdenum, yttrium, calcium, tungsten, vanadium, titanium, niobium, chromium, tantalum, and hafnium. 6. Werkwijze volgens een van de voorgaande conclusies, waarbij de werkwijze het verschaffen van een koolstofbron en het doorlaten van de koolstofbron in het driedimensionale sjabloomnateriaal omvat.A method according to any preceding claim, wherein the method comprises providing a carbon source and passing the carbon source into the three-dimensional template material. 7. Werkwijze volgens conclusie 6, waarbij de gasvormige koolstofbron ten minste één verzadigde of onverzadigde Cl- tot C4-koolwaterstof omvat.The method of claim 6, wherein the gaseous carbon source comprises at least one saturated or unsaturated C1 to C4 hydrocarbon. 8. Werkwijze volgens conclusie 7, waarbij de gasvormige koolstofbron ten minste een van methaan, ethaan, etheen, ethyn, propaan, propeen, propadieen. propyn, butaan, buteen. butadieen, butatrieen en butyn omvat, bij voorkeur ethyn.The method of claim 7, wherein the gaseous carbon source is at least one of methane, ethane, ethylene, ethylene, propane, propylene, propadiene. propyn, butane, butene. butadiene, butatriene and butyne, preferably ethyne. 9. Werkwijze volgens een der conclusies 6-8, waarbij de werkwijze het verwannen van het driedimensionale sjabloon tot een eerste temperatuur omvat om de koolstofbron te carboniseren.The method of any one of claims 6-8, wherein the method comprises heating the three-dimensional template to a first temperature to carbonize the carbon source. f 0. Werkwijze volgens conclusie 9, waarbij de eerste temperatuur ongeveer 350 0 C tot ongeveerf 0. A process according to claim 9, wherein the first temperature is about 350 0 C to about 800 0 C is.800 0 C. 11. Werkwijze volgens conclusie 9 of 10, waarbij het driedimensionale sjabloon wordt verwarmd tot een tweede temperatuur die hoger is dan de eerste temperatuur.The method of claim 9 or 10, wherein the three-dimensional template is heated to a second temperature higher than the first temperature. 12. Werkwijze volgens conclusie 11. waarbij de tweede temperatuur ongeveer 850 0 C is.12. A method according to claim 11 wherein the second temperature is about 850 0 C. 13. Werkwijze volgens een der conclusies 9-12, waarbij het driedimensionale sjabloon wordt opgelost om het koolstofhoudende spectrale zuiverheidsfïlter vrij te maken.The method of any one of claims 9-12, wherein the three-dimensional template is dissolved to release the carbonaceous spectral purity filter. 14. Werkwijze volgens conclusie 13, waarbij het driedimensionale sjabloon wordt opgelost door blootstelling aan een sterk zuur, bij voorkeur fluorwaterstofzuur of zoutzuur, en optioneel daarna door blootstelling aan een hete basische oplossing, zoals natriumhydroxide.The method of claim 13, wherein the three-dimensional template is dissolved by exposure to a strong acid, preferably hydrofluoric or hydrochloric acid, and optionally thereafter by exposure to a hot basic solution, such as sodium hydroxide. 15. Werkwijze volgens een van de voorgaande conclusies, waarbij het driedimensionale sjabloon wordt geproduceerd onder gebruikmaking van een siliciumwafer. bij voorkeur eenkristallijn silicium.The method of any preceding claim, wherein the three-dimensional template is produced using a silicon wafer. preferably single crystalline silicon. 16. Werkwijze volgens conclusie 15, waarbij ten minste een deel van de siliciumwafer wordt omgezet in een zeoliet, of waarbij een zeolietfilm wordt afgezet op een oppervlak van de siliciumwafer.The method of claim 15, wherein at least a portion of the silicon wafer is converted to a zeolite, or wherein a zeolite film is deposited on a surface of the silicon wafer. 17. Werkwijze volgens conclusie 16. waarbij de dikte van het zeoliet ongeveer 50 tot ongeveer 150 nm, bij voorkeur ongeveer 80 tot ongeveer 120 nm, en met de meeste voorkeur ongeveer 100 nm is.The method of claim 16. wherein the thickness of the zeolite is about 50 to about 150 nm, preferably about 80 to about 120 nm, and most preferably about 100 nm. 18. Werkwijze volgens één van de conclusies 5-17, waarbij het zeoliet wordt gedoteerd via ionenuitwisseling.The method of any one of claims 5-17, wherein the zeolite is doped via ion exchange. 19. Gebruik van een driedimensionale sjabloon bij de vervaardiging van een spectraal zuiverheidsfilter, bij voorkeur een koolstofhoudend spectraal zuiverheidsfïlter.19. Use of a three-dimensional template in the manufacture of a spectral purity filter, preferably a carbonaceous spectral purity filter. 20. Gebruik volgens conclusie 19, waarbij het driedimensionale sjabloon een zeoliet is.The use of claim 19, wherein the three-dimensional template is a zeolite. 21. Gebruik volgens conclusie 20, waarbij het zeoliet een gemodificeerd zeoliet is. dat is gedoteerd met een of meer van lanthaan, zink, molybdeen, yttrium, calcium, wolfraam, vanadium, titanium, niobium, chroom, tantaal en hafnium.The use of claim 20, wherein the zeolite is a modified zeolite. doped with one or more of lanthanum, zinc, molybdenum, yttrium, calcium, tungsten, vanadium, titanium, niobium, chromium, tantalum and hafnium. 22. Een driedimensionale sjabloon voor de vervaardiging van een spectraal zuiverheidsfilter. waarbij het sjabloon een zeoliet omvat, bij voorkeur waarbij het spectrale zuiverheidsfilter een koolstofhoudend spectraal zuiverheidsfilter is.22. A three-dimensional template for the manufacture of a spectral purity filter. the template comprising a zeolite, preferably wherein the spectral purity filter is a carbonaceous spectral purity filter. 23. Driedimensionale sjabloon volgens conclusie 22. waarbij de zeoliet is gedoteerd met één of meer van lanthaan, zink, molybdeen, yttrium, calcium, wolfraam, vanadium, titanium, niobium, chroom, tantaal en hafnium.The three-dimensional template of claim 22. wherein the zeolite is doped with one or more of lanthanum, zinc, molybdenum, yttrium, calcium, tungsten, vanadium, titanium, niobium, chromium, tantalum, and hafnium. 24. Een spectraal zuiverheidsfilter met een driedimensionale structuur die in hoofdzaak overeenkomt met de interne poriestructuur van een zeoliet.24. A spectral purity filter with a three-dimensional structure that substantially matches the internal pore structure of a zeolite. 25. Spectraal zuiverheidsfilter volgens conclusie 24. waarbij het spectraal zuiverheidsfilter van silicium of siliciumnitride is.The spectral purity filter of claim 24. wherein the spectral purity filter is of silicon or silicon nitride. 26. Spectraal zuiverheidsfilter volgens conclusie 24, waarbij het spectraal zuiverheidsfilter koolstofhoudend is, zoals een spectraal zuiverheisfilter van grafeem of grafeenderivaat of koolstofnanotubes.The spectral purity filter of claim 24, wherein the spectral purity filter is carbonaceous, such as a spectral purity filter of grapheme or graphene derivative or carbon nanotubes. 27. Spectraal zuiverheidsfilter volgens een van de conclusie 24 tot en met 26, waarbij het spectraal zuiverheidsfilter een doorlatendheid voor EUV straling heeft die hoger is dan 90%.The spectral purity filter of any one of claims 24 to 26, wherein the spectral purity filter has an transmittance to EUV radiation greater than 90%. 28. Spectraal zuiverheidsfilter volgens een van de conclusies 24 tot en met 26, waarbij het spectraal zuiverheidsfilter een doorlatendheid voor EUV straling met een golflengte van 4-20 nm heeft die hoger is dan 90%.The spectral purity filter according to any one of claims 24 to 26, wherein the spectral purity filter has a transmittance for EUV radiation with a wavelength of 4-20 nm greater than 90%. 29. Spectraal zuiverheidsfilter voor een lithografische inrichting verkrijgbaar of verkregen door de werkwijze volgens één van de conclusies 1 tot 18.A spectral purity filter for a lithographic device obtainable or obtained by the method of any one of claims 1 to 18. 30. Spectraal zuiverheidsfilter volgens conclusie 29, waarbij het spectraal zuiverheidsfilter een driedimensionale structuur heeft die in hoofdzaak overeenkomt met de interne poriestructuur van een zeoliet.The spectral purity filter according to claim 29, wherein the spectral purity filter has a three-dimensional structure that substantially corresponds to the internal pore structure of a zeolite. 31. Spectraal zuiverheidsfilter volgens conclusie 29 of 30, waarbij het spectraal zuiverheidsfilter van silicium of siliciumnitride is.The spectral purity filter according to claim 29 or 30, wherein the spectral purity filter is of silicon or silicon nitride. 32. Spectraal zuiverheidsfilter volgens conclusie 29 of 30, waarbij het spectraal zuiverheidsfilter koolstofhoudend is, zoals een spectraal zuiverheidsfilter van grafeen of grafeenderivaat of koolstof nanotubes.The spectral purity filter of claim 29 or 30, wherein the spectral purity filter is carbonaceous, such as a spectral purity filter of graphene or graphene derivative or carbon nanotubes. 33. Spectraal zuiverheidsfilter volgens een van de conclusie 29 tot en met 32, waarbij het spectraal zuiverheidsfilter een doorlatendheid voor EUV straling heeft die hoger is dan 90%.The spectral purity filter of any one of claims 29 to 32, wherein the spectral purity filter has an transmittance to EUV radiation greater than 90%. 34. Spectraal zuiverheidsfilter volgens een van de conclusies 29 tot en met 32. waarbij het spectraal zuiverheidsfilter een doorlatendheid voor EUV straling met een golflengte van 4-20 nm heeft die hoger is dan 90%.The spectral purity filter according to any one of claims 29 to 32, wherein the spectral purity filter has a transmittance for EUV radiation with a wavelength of 4-20 nm greater than 90%. 35. Gebruik van een spectraal zuiverheidsfilter vervaardigd met behulp van de werkwijze volgens een van de conclusies 1 tot 18 of volgens een van de conclusies 24 - 34 in een lithografisch apparaat.Use of a spectral purity filter made by the method according to any one of claims 1 to 18 or according to any one of claims 24-34 in a lithographic apparatus.
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