NL186207B - Werkwijze voor het vervaardigen van een halfgeleiderinrichting. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Info

Publication number
NL186207B
NL186207B NL7903319A NL7903319A NL186207B NL 186207 B NL186207 B NL 186207B NL 7903319 A NL7903319 A NL 7903319A NL 7903319 A NL7903319 A NL 7903319A NL 186207 B NL186207 B NL 186207B
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
NL7903319A
Other languages
English (en)
Dutch (nl)
Other versions
NL7903319A (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7903319A publication Critical patent/NL7903319A/xx
Publication of NL186207B publication Critical patent/NL186207B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/018—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
NL7903319A 1978-04-28 1979-04-26 Werkwijze voor het vervaardigen van een halfgeleiderinrichting. NL186207B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53049971A JPS5946415B2 (ja) 1978-04-28 1978-04-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
NL7903319A NL7903319A (nl) 1979-10-30
NL186207B true NL186207B (nl) 1990-05-01

Family

ID=12845895

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7903319A NL186207B (nl) 1978-04-28 1979-04-26 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Country Status (6)

Country Link
US (1) US4246693A (US20030220297A1-20031127-C00009.png)
JP (1) JPS5946415B2 (US20030220297A1-20031127-C00009.png)
CA (1) CA1127322A (US20030220297A1-20031127-C00009.png)
DE (1) DE2917165A1 (US20030220297A1-20031127-C00009.png)
GB (1) GB2022316B (US20030220297A1-20031127-C00009.png)
NL (1) NL186207B (US20030220297A1-20031127-C00009.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3132983A1 (de) * 1981-08-20 1983-03-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum verbinden eines halbleiterchips mit einem chiptraeger
EP0284817B1 (de) * 1987-04-03 1991-01-23 BBC Brown Boveri AG Verfahren zum Herstellen von Halbleiterbauelementen
DE4223887A1 (de) * 1992-07-21 1994-01-27 Basf Ag Verfahren zur Herstellung eines Polymer/Metall- oder Polymer/Halbleiter-Verbundes
US5660798A (en) * 1993-04-20 1997-08-26 Actimed Laboratories, Inc. Apparatus for red blood cell separation
US5766552A (en) * 1993-04-20 1998-06-16 Actimed Laboratories, Inc. Apparatus for red blood cell separation
US6168975B1 (en) * 1998-06-24 2001-01-02 St Assembly Test Services Pte Ltd Method of forming extended lead package

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE562375A (US20030220297A1-20031127-C00009.png) * 1957-01-02
US3450958A (en) * 1967-01-10 1969-06-17 Sprague Electric Co Multi-plane metal-semiconductor junction device
DE1719501B2 (de) * 1968-01-16 1977-06-02 Rojsin, Natan Mojsejevitsch; Larionov, Igor Naumovitsch; Kolesowa, Alvina Grigorjevna; Moskau Verfahren zum herstellen einer zone legierten materials auf der oberflaeche einer einkristallinen, halbleitenden oder metallischen platte
DE1803489A1 (de) * 1968-10-17 1970-05-27 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes
JPS4814638B1 (US20030220297A1-20031127-C00009.png) * 1970-04-03 1973-05-09
NL7111212A (US20030220297A1-20031127-C00009.png) * 1970-08-24 1972-02-28
US3702787A (en) * 1970-11-02 1972-11-14 Motorola Inc Method of forming ohmic contact for semiconducting devices
US4003126A (en) * 1974-09-12 1977-01-18 Canadian Patents And Development Limited Method of making metal oxide semiconductor devices
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
JPS5363983A (en) * 1976-11-19 1978-06-07 Toshiba Corp Semiconductor device
US4147564A (en) * 1977-11-18 1979-04-03 Sri International Method of controlled surface texturization of crystalline semiconductor material

Also Published As

Publication number Publication date
DE2917165C2 (US20030220297A1-20031127-C00009.png) 1987-01-15
JPS54142976A (en) 1979-11-07
DE2917165A1 (de) 1979-11-22
GB2022316B (en) 1982-07-21
GB2022316A (en) 1979-12-12
CA1127322A (en) 1982-07-06
US4246693A (en) 1981-01-27
JPS5946415B2 (ja) 1984-11-12
NL7903319A (nl) 1979-10-30

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee

Effective date: 19951101