NL165004C - Geintegreerde halfgeleiderschakeling voorzien van een monokristallijn halfgeleidersubstraat en een uit de dampfase daarop aangebrachte halfgeleidende laag, bestaande uit een polykristallijn gebied en uit ten minste twee monokristallijne gebieden. - Google Patents

Geintegreerde halfgeleiderschakeling voorzien van een monokristallijn halfgeleidersubstraat en een uit de dampfase daarop aangebrachte halfgeleidende laag, bestaande uit een polykristallijn gebied en uit ten minste twee monokristallijne gebieden.

Info

Publication number
NL165004C
NL165004C NL6916396.A NL6916396A NL165004C NL 165004 C NL165004 C NL 165004C NL 6916396 A NL6916396 A NL 6916396A NL 165004 C NL165004 C NL 165004C
Authority
NL
Netherlands
Prior art keywords
monocrystalline
area
vapor phase
layer applied
semiconductive layer
Prior art date
Application number
NL6916396.A
Other languages
English (en)
Dutch (nl)
Other versions
NL165004B (nl
NL6916396A (enExample
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP43079130A external-priority patent/JPS4826180B1/ja
Priority claimed from JP43079129A external-priority patent/JPS4914111B1/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL6916396A publication Critical patent/NL6916396A/xx
Publication of NL165004B publication Critical patent/NL165004B/xx
Application granted granted Critical
Publication of NL165004C publication Critical patent/NL165004C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
NL6916396.A 1968-10-30 1969-10-30 Geintegreerde halfgeleiderschakeling voorzien van een monokristallijn halfgeleidersubstraat en een uit de dampfase daarop aangebrachte halfgeleidende laag, bestaande uit een polykristallijn gebied en uit ten minste twee monokristallijne gebieden. NL165004C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP43079130A JPS4826180B1 (enExample) 1968-10-30 1968-10-30
JP43079129A JPS4914111B1 (enExample) 1968-10-30 1968-10-30

Publications (3)

Publication Number Publication Date
NL6916396A NL6916396A (enExample) 1970-05-04
NL165004B NL165004B (nl) 1980-09-15
NL165004C true NL165004C (nl) 1981-02-16

Family

ID=26420198

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6916396.A NL165004C (nl) 1968-10-30 1969-10-30 Geintegreerde halfgeleiderschakeling voorzien van een monokristallijn halfgeleidersubstraat en een uit de dampfase daarop aangebrachte halfgeleidende laag, bestaande uit een polykristallijn gebied en uit ten minste twee monokristallijne gebieden.

Country Status (4)

Country Link
GB (1) GB1287134A (enExample)
NL (1) NL165004C (enExample)
NO (1) NO125997B (enExample)
SE (1) SE362991B (enExample)

Also Published As

Publication number Publication date
NL165004B (nl) 1980-09-15
SE362991B (enExample) 1973-12-27
GB1287134A (en) 1972-08-31
NL6916396A (enExample) 1970-05-04
NO125997B (enExample) 1972-12-04

Similar Documents

Publication Publication Date Title
CA923626A (en) Electro-luminescent semiconductor device
NL164702B (nl) Geintegreerde halfgeleiderschakeling, voorzien van een door een reactie in de dampfase gevormde halfgeleidende laag, die bestaat uit monokristallijne gebieden en uit een polykristallijn gebied dat de monokristallijne gebieden van elkaar scheidt.
NL151213B (nl) Werkwijze voor het vervaardigen van een planaire halfgeleiderinrichting, voorzien van een vrijwel uitsluitend uit palladium bestaande laag, alsmede de aldus vervaardigde halfgeleiderinrichting.
CH501980A (de) Monolithische, integrierte Halbleiteranordnung
NL165004C (nl) Geintegreerde halfgeleiderschakeling voorzien van een monokristallijn halfgeleidersubstraat en een uit de dampfase daarop aangebrachte halfgeleidende laag, bestaande uit een polykristallijn gebied en uit ten minste twee monokristallijne gebieden.
NL185808C (nl) Samengestelde hoogspanning-halfgeleiderinrichting.
NL144436B (nl) Halfgeleiderinrichting, in het bijzonder planaire transistor.
ATA593771A (de) Halbleiteranordnung, insbesondere monolithische integrierte schaltung, mit voneinander isolierten halbleiterinseln
CA939827A (en) Semiconductor integrated circuits
NL182763C (nl) Geintegreerde halfgeleiderschakeling van het injektietype, omvattende een uit een halfgeleidersubstraat van een eerste geleidingstype en een epitaxiale halfgeleiderlaag van het aan het eerste geleidingstype tegengestelde tweede geleidingstype bestaand halfgeleiderlichaam.
CA970257A (en) Insulating layer on a semiconductor substrate
NL183153C (nl) Halfgeleidergeheugenschakeling, omvattende een halfgeleiderlichaam met tenminste een uit een opslagelement en een overdrachtelement bestaand geheugenelement en een werkwijze voor het bedrijven van de halfgeleidergeheugenschakeling.
AU454727B2 (en) Semiconductor integrated circuit device
AU436741B2 (en) Integrated semiconductor circuit arrangement
AU436201B2 (en) Integrated semiconductor circuit arrangement
AU442591B2 (en) Semiconductor junction devices
CA776327A (en) Galvanomagnetic semiconductor device
AU408437B2 (en) Integrated semiconductor circuit
AU441277B2 (en) Integrated semiconductor circuit
AU433373B2 (en) Integrated semiconductor circuit
AU462119B2 (en) Monolithic integrated semiconductor device
AU478509B2 (en) Semiconductor amplifying, and rectifying circuit
CA858123A (en) Semiconductor integrated circuits
CA858124A (en) Semiconductor integrated circuits
CA848625A (en) Integrated semiconductor circuit

Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee