JPS4914111B1 - - Google Patents

Info

Publication number
JPS4914111B1
JPS4914111B1 JP43079129A JP7912968A JPS4914111B1 JP S4914111 B1 JPS4914111 B1 JP S4914111B1 JP 43079129 A JP43079129 A JP 43079129A JP 7912968 A JP7912968 A JP 7912968A JP S4914111 B1 JPS4914111 B1 JP S4914111B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43079129A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP43079129A priority Critical patent/JPS4914111B1/ja
Priority to BE740938A priority patent/BE740938A/xx
Priority to US872335A priority patent/US3617822A/en
Priority to SE14779/69A priority patent/SE362991B/xx
Priority to NL6916396.A priority patent/NL165004C/xx
Priority to GB53224/69A priority patent/GB1287134A/en
Priority to AT1021169A priority patent/AT310254B/de
Priority to FR6937345A priority patent/FR2030578A6/fr
Priority to NO4299/69A priority patent/NO125997B/no
Priority to DE691954771A priority patent/DE1954771B2/de
Priority to CH1617269A priority patent/CH496323A/de
Priority to FR6942177A priority patent/FR2030781A6/fr
Publication of JPS4914111B1 publication Critical patent/JPS4914111B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP43079129A 1967-12-05 1968-10-30 Pending JPS4914111B1 (enExample)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP43079129A JPS4914111B1 (enExample) 1968-10-30 1968-10-30
BE740938A BE740938A (enExample) 1967-12-05 1969-10-29
US872335A US3617822A (en) 1967-12-05 1969-10-29 Semiconductor integrated circuit
SE14779/69A SE362991B (enExample) 1968-10-30 1969-10-29
NL6916396.A NL165004C (nl) 1968-10-30 1969-10-30 Geintegreerde halfgeleiderschakeling voorzien van een monokristallijn halfgeleidersubstraat en een uit de dampfase daarop aangebrachte halfgeleidende laag, bestaande uit een polykristallijn gebied en uit ten minste twee monokristallijne gebieden.
GB53224/69A GB1287134A (en) 1968-10-30 1969-10-30 Semiconductor integrated circuit and method of making the same
AT1021169A AT310254B (de) 1968-10-30 1969-10-30 Integrierte Halbleiterschaltung
FR6937345A FR2030578A6 (fr) 1967-12-05 1969-10-30 Procédé de fabrication de circuits semi-conducteurs intégrés et circuits ainsi obtenus
NO4299/69A NO125997B (enExample) 1968-10-30 1969-10-30
DE691954771A DE1954771B2 (de) 1967-12-05 1969-10-30 Verfahren zur Herstellung einer integrierten Halbleiterschaltung
CH1617269A CH496323A (de) 1967-12-05 1969-10-30 Verfahren zur Herstellung einer integrierten Halbleiterschaltung
FR6942177A FR2030781A6 (fr) 1967-12-05 1969-12-05 Procédé de fabrication de circuits semi-conducteurs intégrés et circuits ainsi obtenus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43079129A JPS4914111B1 (enExample) 1968-10-30 1968-10-30

Publications (1)

Publication Number Publication Date
JPS4914111B1 true JPS4914111B1 (enExample) 1974-04-05

Family

ID=13681320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43079129A Pending JPS4914111B1 (enExample) 1967-12-05 1968-10-30

Country Status (2)

Country Link
JP (1) JPS4914111B1 (enExample)
AT (1) AT310254B (enExample)

Also Published As

Publication number Publication date
AT310254B (de) 1973-09-25

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