NL164159C - Planaire veldeffecttransistor met ringvormig afscherm- gebied. - Google Patents

Planaire veldeffecttransistor met ringvormig afscherm- gebied.

Info

Publication number
NL164159C
NL164159C NL6914376.A NL6914376A NL164159C NL 164159 C NL164159 C NL 164159C NL 6914376 A NL6914376 A NL 6914376A NL 164159 C NL164159 C NL 164159C
Authority
NL
Netherlands
Prior art keywords
planaric
field effect
effect transistor
shield area
ring shield
Prior art date
Application number
NL6914376.A
Other languages
English (en)
Dutch (nl)
Other versions
NL6914376A (enrdf_load_stackoverflow
NL164159B (nl
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of NL6914376A publication Critical patent/NL6914376A/xx
Publication of NL164159B publication Critical patent/NL164159B/xx
Application granted granted Critical
Publication of NL164159C publication Critical patent/NL164159C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
NL6914376.A 1968-10-11 1969-09-23 Planaire veldeffecttransistor met ringvormig afscherm- gebied. NL164159C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76689468A 1968-10-11 1968-10-11

Publications (3)

Publication Number Publication Date
NL6914376A NL6914376A (enrdf_load_stackoverflow) 1970-04-14
NL164159B NL164159B (nl) 1980-06-16
NL164159C true NL164159C (nl) 1980-11-17

Family

ID=25077853

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6914376.A NL164159C (nl) 1968-10-11 1969-09-23 Planaire veldeffecttransistor met ringvormig afscherm- gebied.

Country Status (8)

Country Link
JP (1) JPS4941957B1 (enrdf_load_stackoverflow)
BE (1) BE740085A (enrdf_load_stackoverflow)
CH (1) CH494474A (enrdf_load_stackoverflow)
DE (1) DE1948052C3 (enrdf_load_stackoverflow)
FR (1) FR2020370B1 (enrdf_load_stackoverflow)
GB (1) GB1251732A (enrdf_load_stackoverflow)
NL (1) NL164159C (enrdf_load_stackoverflow)
SE (1) SE359403B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés

Also Published As

Publication number Publication date
DE1948052C3 (de) 1975-03-06
DE1948052B2 (de) 1973-11-08
FR2020370B1 (enrdf_load_stackoverflow) 1973-11-16
GB1251732A (enrdf_load_stackoverflow) 1971-10-27
JPS4941957B1 (enrdf_load_stackoverflow) 1974-11-12
FR2020370A1 (enrdf_load_stackoverflow) 1970-07-10
SE359403B (enrdf_load_stackoverflow) 1973-08-27
NL6914376A (enrdf_load_stackoverflow) 1970-04-14
BE740085A (enrdf_load_stackoverflow) 1970-03-16
DE1948052A1 (de) 1970-04-16
CH494474A (de) 1970-07-31
NL164159B (nl) 1980-06-16

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee