FR2020370A1 - - Google Patents

Info

Publication number
FR2020370A1
FR2020370A1 FR6930696A FR6930696A FR2020370A1 FR 2020370 A1 FR2020370 A1 FR 2020370A1 FR 6930696 A FR6930696 A FR 6930696A FR 6930696 A FR6930696 A FR 6930696A FR 2020370 A1 FR2020370 A1 FR 2020370A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR6930696A
Other languages
French (fr)
Other versions
FR2020370B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2020370A1 publication Critical patent/FR2020370A1/fr
Application granted granted Critical
Publication of FR2020370B1 publication Critical patent/FR2020370B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
FR6930696A 1968-10-11 1969-09-02 Expired FR2020370B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76689468A 1968-10-11 1968-10-11

Publications (2)

Publication Number Publication Date
FR2020370A1 true FR2020370A1 (enrdf_load_stackoverflow) 1970-07-10
FR2020370B1 FR2020370B1 (enrdf_load_stackoverflow) 1973-11-16

Family

ID=25077853

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6930696A Expired FR2020370B1 (enrdf_load_stackoverflow) 1968-10-11 1969-09-02

Country Status (8)

Country Link
JP (1) JPS4941957B1 (enrdf_load_stackoverflow)
BE (1) BE740085A (enrdf_load_stackoverflow)
CH (1) CH494474A (enrdf_load_stackoverflow)
DE (1) DE1948052C3 (enrdf_load_stackoverflow)
FR (1) FR2020370B1 (enrdf_load_stackoverflow)
GB (1) GB1251732A (enrdf_load_stackoverflow)
NL (1) NL164159C (enrdf_load_stackoverflow)
SE (1) SE359403B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés
GB1129200A (en) * 1966-09-26 1968-10-02 Itt High frequency field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1129200A (en) * 1966-09-26 1968-10-02 Itt High frequency field effect transistor
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
REVUE ALLEMANDE VDI ZEITSCHRIFT VOL. 109, JUIN 1967 "KOMPLEMENTARE SILIZIUMTRANSISTOREN" PAGE 1027 *
REVUE AMERICAINE APPLIED PHYSICS LETTERS VOL. 12, NO. 3, 1 FEVRIER 1968 "AL203-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS"A.WAXMAN & K.H. Z AININGER PAGES 109-110.) *

Also Published As

Publication number Publication date
NL164159C (nl) 1980-11-17
DE1948052C3 (de) 1975-03-06
DE1948052B2 (de) 1973-11-08
FR2020370B1 (enrdf_load_stackoverflow) 1973-11-16
GB1251732A (enrdf_load_stackoverflow) 1971-10-27
JPS4941957B1 (enrdf_load_stackoverflow) 1974-11-12
SE359403B (enrdf_load_stackoverflow) 1973-08-27
NL6914376A (enrdf_load_stackoverflow) 1970-04-14
BE740085A (enrdf_load_stackoverflow) 1970-03-16
DE1948052A1 (de) 1970-04-16
CH494474A (de) 1970-07-31
NL164159B (nl) 1980-06-16

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Legal Events

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