NL163066C - Veldeffecttransistor met een door een pn-overgang van het kanaalgebied gescheiden stuurgebied. - Google Patents
Veldeffecttransistor met een door een pn-overgang van het kanaalgebied gescheiden stuurgebied.Info
- Publication number
- NL163066C NL163066C NL6907405.A NL6907405A NL163066C NL 163066 C NL163066 C NL 163066C NL 6907405 A NL6907405 A NL 6907405A NL 163066 C NL163066 C NL 163066C
- Authority
- NL
- Netherlands
- Prior art keywords
- transition
- field effect
- effect transistor
- separated
- area
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72917568A | 1968-05-15 | 1968-05-15 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL6907405A NL6907405A (xx) | 1969-11-18 |
NL163066B NL163066B (nl) | 1980-02-15 |
NL163066C true NL163066C (nl) | 1980-07-15 |
Family
ID=24929899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6907405.A NL163066C (nl) | 1968-05-15 | 1969-05-14 | Veldeffecttransistor met een door een pn-overgang van het kanaalgebied gescheiden stuurgebied. |
Country Status (5)
Country | Link |
---|---|
US (1) | US3538399A (xx) |
DE (1) | DE1924726A1 (xx) |
FR (1) | FR2008599B1 (xx) |
GB (1) | GB1246208A (xx) |
NL (1) | NL163066C (xx) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS524426B2 (xx) * | 1973-04-20 | 1977-02-03 | ||
GB1471617A (en) * | 1973-06-21 | 1977-04-27 | Sony Corp | Circuits comprising a semiconductor device |
US3855613A (en) * | 1973-06-22 | 1974-12-17 | Rca Corp | A solid state switch using an improved junction field effect transistor |
GB1477467A (en) * | 1973-06-26 | 1977-06-22 | Sony Corp | Analogue memory circuits |
US4117587A (en) * | 1973-11-30 | 1978-10-03 | Matsushita Electronics Corporation | Negative-resistance semiconductor device |
JPS5140887A (xx) * | 1974-10-04 | 1976-04-06 | Hitachi Ltd | |
US4496963A (en) * | 1976-08-20 | 1985-01-29 | National Semiconductor Corporation | Semiconductor device with an ion implanted stabilization layer |
US4393575A (en) * | 1979-03-09 | 1983-07-19 | National Semiconductor Corporation | Process for manufacturing a JFET with an ion implanted stabilization layer |
US4698653A (en) * | 1979-10-09 | 1987-10-06 | Cardwell Jr Walter T | Semiconductor devices controlled by depletion regions |
US4638344A (en) * | 1979-10-09 | 1987-01-20 | Cardwell Jr Walter T | Junction field-effect transistor controlled by merged depletion regions |
US4322738A (en) * | 1980-01-21 | 1982-03-30 | Texas Instruments Incorporated | N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques |
US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
US4608589A (en) * | 1980-07-08 | 1986-08-26 | International Business Machines Corporation | Self-aligned metal structure for integrated circuits |
US4758528A (en) * | 1980-07-08 | 1988-07-19 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
USRE34821E (en) * | 1986-11-17 | 1995-01-03 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
EP0268426A3 (en) * | 1986-11-17 | 1989-03-15 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
CN100397654C (zh) * | 2004-08-17 | 2008-06-25 | 北京大学 | 双栅结栅场效应晶体管 |
CN100479193C (zh) * | 2004-08-17 | 2009-04-15 | 北京大学 | 浮栅闪存场效应晶体管 |
US20070278539A1 (en) * | 2006-06-02 | 2007-12-06 | Agere Systems Inc. | Junction field effect transistor and method for manufacture |
JP2011238771A (ja) * | 2010-05-11 | 2011-11-24 | Hitachi Ltd | 半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3150299A (en) * | 1959-09-11 | 1964-09-22 | Fairchild Camera Instr Co | Semiconductor circuit complex having isolation means |
US3237062A (en) * | 1961-10-20 | 1966-02-22 | Westinghouse Electric Corp | Monolithic semiconductor devices |
BE632105A (xx) * | 1962-05-09 | |||
US3210677A (en) * | 1962-05-28 | 1965-10-05 | Westinghouse Electric Corp | Unipolar-bipolar semiconductor amplifier |
GB1047388A (xx) * | 1962-10-05 | |||
GB1026489A (en) * | 1963-11-15 | 1966-04-20 | Standard Telephones Cables Ltd | Semiconductor device fabrication |
US3278853A (en) * | 1963-11-21 | 1966-10-11 | Westinghouse Electric Corp | Integrated circuits with field effect transistors and diode bias means |
US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
US3327182A (en) * | 1965-06-14 | 1967-06-20 | Westinghouse Electric Corp | Semiconductor integrated circuit structure and method of making the same |
US3370995A (en) * | 1965-08-02 | 1968-02-27 | Texas Instruments Inc | Method for fabricating electrically isolated semiconductor devices in integrated circuits |
US3414782A (en) * | 1965-12-03 | 1968-12-03 | Westinghouse Electric Corp | Semiconductor structure particularly for performing unipolar transistor functions in integrated circuits |
US3404450A (en) * | 1966-01-26 | 1968-10-08 | Westinghouse Electric Corp | Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions |
-
1968
- 1968-05-15 US US729175A patent/US3538399A/en not_active Expired - Lifetime
-
1969
- 1969-05-13 GB GB24405/69A patent/GB1246208A/en not_active Expired
- 1969-05-14 DE DE19691924726 patent/DE1924726A1/de active Pending
- 1969-05-14 FR FR6915741A patent/FR2008599B1/fr not_active Expired
- 1969-05-14 NL NL6907405.A patent/NL163066C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
NL163066B (nl) | 1980-02-15 |
FR2008599B1 (xx) | 1973-10-19 |
US3538399A (en) | 1970-11-03 |
FR2008599A1 (xx) | 1970-01-23 |
GB1246208A (en) | 1971-09-15 |
NL6907405A (xx) | 1969-11-18 |
DE1924726A1 (de) | 1970-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee |