NL153376B - Bestuurbare halfgeleidergelijkrichter. - Google Patents

Bestuurbare halfgeleidergelijkrichter.

Info

Publication number
NL153376B
NL153376B NL676709509A NL6709509A NL153376B NL 153376 B NL153376 B NL 153376B NL 676709509 A NL676709509 A NL 676709509A NL 6709509 A NL6709509 A NL 6709509A NL 153376 B NL153376 B NL 153376B
Authority
NL
Netherlands
Prior art keywords
controllable semiconductor
semiconductor rectifier
rectifier
controllable
semiconductor
Prior art date
Application number
NL676709509A
Other languages
English (en)
Other versions
NL6709509A (nl
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of NL6709509A publication Critical patent/NL6709509A/xx
Publication of NL153376B publication Critical patent/NL153376B/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
NL676709509A 1966-07-09 1967-07-07 Bestuurbare halfgeleidergelijkrichter. NL153376B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEB0087937 1966-07-09

Publications (2)

Publication Number Publication Date
NL6709509A NL6709509A (nl) 1968-01-10
NL153376B true NL153376B (nl) 1977-05-16

Family

ID=6984034

Family Applications (1)

Application Number Title Priority Date Filing Date
NL676709509A NL153376B (nl) 1966-07-09 1967-07-07 Bestuurbare halfgeleidergelijkrichter.

Country Status (5)

Country Link
US (1) US3449649A (nl)
BE (1) BE701091A (nl)
CH (1) CH458545A (nl)
GB (1) GB1182447A (nl)
NL (1) NL153376B (nl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3662250A (en) * 1970-11-12 1972-05-09 Gen Electric Thyristor overvoltage protective circuit
BE755356A (fr) * 1969-08-27 1971-03-01 Westinghouse Electric Corp Interrupteur a semi conducteur a grille de commande pour courant eleve
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR6462522D0 (pt) * 1963-10-28 1973-05-15 Rca Corp Dispositivos semicondutores e processo de fabrica-los
DE1239778B (de) * 1963-11-16 1967-05-03 Siemens Ag Schaltbares Halbleiterbauelement von pnpn-Typ
US3403309A (en) * 1965-10-23 1968-09-24 Westinghouse Electric Corp High-speed semiconductor switch

Also Published As

Publication number Publication date
US3449649A (en) 1969-06-10
DE1539695A1 (de) 1969-12-04
GB1182447A (en) 1970-02-25
CH458545A (de) 1968-06-30
NL6709509A (nl) 1968-01-10
BE701091A (nl) 1967-12-18
DE1539695B2 (de) 1976-01-08

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