NL142932B - Werkwijze ter bereiding van butadieen-1.3 door reactie van een buteen met moleculaire zuurstof. - Google Patents

Werkwijze ter bereiding van butadieen-1.3 door reactie van een buteen met moleculaire zuurstof.

Info

Publication number
NL142932B
NL142932B NL707015093A NL142932DA NL142932B NL 142932 B NL142932 B NL 142932B NL 707015093 A NL707015093 A NL 707015093A NL 142932D A NL142932D A NL 142932DA NL 142932 B NL142932 B NL 142932B
Authority
NL
Netherlands
Prior art keywords
butene
butadiene
reaction
preparation
molecular oxygen
Prior art date
Application number
NL707015093A
Other languages
English (en)
Dutch (nl)
Original Assignee
Nippon Kayaku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL142932B publication Critical patent/NL142932B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL707015093A 1948-08-23 Werkwijze ter bereiding van butadieen-1.3 door reactie van een buteen met moleculaire zuurstof. NL142932B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR937189X 1948-08-23

Publications (1)

Publication Number Publication Date
NL142932B true NL142932B (nl)

Family

ID=9457770

Family Applications (2)

Application Number Title Priority Date Filing Date
NL69164D NL69164C (de) 1948-08-23
NL707015093A NL142932B (nl) 1948-08-23 Werkwijze ter bereiding van butadieen-1.3 door reactie van een buteen met moleculaire zuurstof.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL69164D NL69164C (de) 1948-08-23

Country Status (6)

Country Link
BE (1) BE490440A (de)
CH (1) CH282856A (de)
DE (1) DE937189C (de)
FR (1) FR1010469A (de)
GB (1) GB674244A (de)
NL (2) NL142932B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291322B (de) * 1954-03-16 1969-03-27 Siemens Ag Verfahren zum Ziehen eines Zonen unterschiedlicher Dotierung aufweisenden Halbleiterkristalls
DE1219233B (de) * 1955-04-18 1966-06-16 Siemens Ag Verfahren zum Herstellen von zur Verwendung in Halbleiteranordnungen bestimmtem Germanium oder Silizium mit einer definiert eingestellten Diffusionslaenge der Ladungstraeger
DE1084840B (de) * 1957-01-23 1960-07-07 Intermetall Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren
NL101161C (de) * 1959-01-23 1900-01-01

Also Published As

Publication number Publication date
DE937189C (de) 1955-12-29
FR1010469A (fr) 1952-06-11
BE490440A (de) 1900-01-01
NL69164C (de) 1900-01-01
GB674244A (en) 1952-06-18
CH282856A (fr) 1952-05-15

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