NL126240C - - Google Patents

Info

Publication number
NL126240C
NL126240C NL126240DA NL126240C NL 126240 C NL126240 C NL 126240C NL 126240D A NL126240D A NL 126240DA NL 126240 C NL126240 C NL 126240C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL126240C publication Critical patent/NL126240C/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
NL126240D 1958-02-19 NL126240C (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1958S0057004 DE1094710C2 (de) 1958-02-19 1958-02-19 Verfahren zur Zuechtung von Einkristallen durch tiegelfreies Zonenschmelzen

Publications (1)

Publication Number Publication Date
NL126240C true NL126240C (enrdf_load_stackoverflow)

Family

ID=7491503

Family Applications (2)

Application Number Title Priority Date Filing Date
NL126240D NL126240C (enrdf_load_stackoverflow) 1958-02-19
NL235481D NL235481A (enrdf_load_stackoverflow) 1958-02-19

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL235481D NL235481A (enrdf_load_stackoverflow) 1958-02-19

Country Status (7)

Country Link
US (1) US3159459A (enrdf_load_stackoverflow)
BE (1) BE575837A (enrdf_load_stackoverflow)
CH (1) CH364244A (enrdf_load_stackoverflow)
DE (1) DE1094710C2 (enrdf_load_stackoverflow)
FR (1) FR1214641A (enrdf_load_stackoverflow)
GB (1) GB888148A (enrdf_load_stackoverflow)
NL (2) NL235481A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1217339B (de) * 1961-11-29 1966-05-26 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DE1208292B (de) * 1963-03-29 1966-01-05 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1218404B (de) * 1964-02-01 1966-06-08 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
DE1960088C3 (de) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
DE2358300C3 (de) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
NL168491B (enrdf_load_stackoverflow) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
NL89230C (enrdf_load_stackoverflow) * 1952-12-17 1900-01-01
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1215649B (de) * 1954-06-30 1966-05-05 Siemens Ag Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
NL234451A (enrdf_load_stackoverflow) * 1957-12-27

Also Published As

Publication number Publication date
GB888148A (en) 1962-01-24
DE1094710B (de) 1960-12-15
US3159459A (en) 1964-12-01
DE1094710C2 (de) 1969-02-20
FR1214641A (fr) 1960-04-11
BE575837A (fr) 1959-08-18
CH364244A (de) 1962-09-15
NL235481A (enrdf_load_stackoverflow)

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