NL105573C - - Google Patents

Info

Publication number
NL105573C
NL105573C NL105573DA NL105573C NL 105573 C NL105573 C NL 105573C NL 105573D A NL105573D A NL 105573DA NL 105573 C NL105573 C NL 105573C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL105573C publication Critical patent/NL105573C/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL105573D 1955-08-25 NL105573C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24510/55A GB792006A (en) 1955-08-25 1955-08-25 Improvements in or relating to the preparation of single crystals of silicon

Publications (1)

Publication Number Publication Date
NL105573C true NL105573C (nl)

Family

ID=10212792

Family Applications (2)

Application Number Title Priority Date Filing Date
NL105573D NL105573C (nl) 1955-08-25
NL209709D NL209709A (nl) 1955-08-25

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL209709D NL209709A (nl) 1955-08-25

Country Status (5)

Country Link
US (1) US2851342A (nl)
DE (1) DE1042552B (nl)
FR (1) FR1155771A (nl)
GB (1) GB792006A (nl)
NL (2) NL209709A (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113990C (nl) * 1955-11-02
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
NL251143A (nl) * 1959-05-04
US3095279A (en) * 1960-04-07 1963-06-25 Tung Sol Electric Inc Apparatus for producing pure silicon
US3053635A (en) * 1960-09-26 1962-09-11 Clevite Corp Method of growing silicon carbide crystals
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate
US3277865A (en) * 1963-04-01 1966-10-11 United States Steel Corp Metal-vapor source with heated reflecting shield
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
DE1261842B (de) * 1964-12-12 1968-02-29 Siemens Ag Verfahren zum Herstellen von hochreinem Silicium
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2686212A (en) * 1953-08-03 1954-08-10 Gen Electric Electric heating apparatus

Also Published As

Publication number Publication date
NL209709A (nl)
GB792006A (en) 1958-03-19
DE1042552B (de) 1958-11-06
US2851342A (en) 1958-09-09
FR1155771A (fr) 1958-05-08

Similar Documents

Publication Publication Date Title
BE546931A (nl)
AT198671B (nl)
AT197696B (nl)
AT195202B (nl)
DE1116304C2 (nl)
AT198478B (nl)
AT197899B (nl)
AT195161B (nl)
AT195620B (nl)
AT195039B (nl)
AT196484B (nl)
AT196487B (nl)
AT196488B (nl)
AT196599B (nl)
AT196671B (nl)
AT195613B (nl)
AT196795B (nl)
AT197113B (nl)
AT195663B (nl)
AT197200B (nl)
AT195570B (nl)
AT197645B (nl)
AT195705B (nl)
AT197742B (nl)
AT198439B (nl)