NL1030823A1 - Een nieuwe wafer-reparatiewerkwijze die gebruik maakt van rechtstreeks schrijven. - Google Patents

Een nieuwe wafer-reparatiewerkwijze die gebruik maakt van rechtstreeks schrijven.

Info

Publication number
NL1030823A1
NL1030823A1 NL1030823A NL1030823A NL1030823A1 NL 1030823 A1 NL1030823 A1 NL 1030823A1 NL 1030823 A NL1030823 A NL 1030823A NL 1030823 A NL1030823 A NL 1030823A NL 1030823 A1 NL1030823 A1 NL 1030823A1
Authority
NL
Netherlands
Prior art keywords
repair method
direct writing
new wafer
uses direct
wafer repair
Prior art date
Application number
NL1030823A
Other languages
English (en)
Other versions
NL1030823C2 (nl
Inventor
Chin-Hsiang Lin
Burn-Jeng Lin
Tsai-Sheng Gau
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL1030823A1 publication Critical patent/NL1030823A1/nl
Application granted granted Critical
Publication of NL1030823C2 publication Critical patent/NL1030823C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
NL1030823A 2005-01-05 2006-01-02 Een nieuwe wafer-reparatiewerkwijze die gebruik maakt van rechtstreeks schrijven. NL1030823C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/029,992 US7307001B2 (en) 2005-01-05 2005-01-05 Wafer repair method using direct-writing
US2999205 2005-01-05

Publications (2)

Publication Number Publication Date
NL1030823A1 true NL1030823A1 (nl) 2006-07-06
NL1030823C2 NL1030823C2 (nl) 2011-08-30

Family

ID=36641004

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1030823A NL1030823C2 (nl) 2005-01-05 2006-01-02 Een nieuwe wafer-reparatiewerkwijze die gebruik maakt van rechtstreeks schrijven.

Country Status (6)

Country Link
US (2) US7307001B2 (nl)
JP (1) JP4560487B2 (nl)
KR (1) KR100746456B1 (nl)
CN (1) CN100367454C (nl)
NL (1) NL1030823C2 (nl)
TW (1) TWI295479B (nl)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307001B2 (en) * 2005-01-05 2007-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer repair method using direct-writing
US7898204B2 (en) * 2007-01-05 2011-03-01 Active Precision, Inc. High-speed substrate manipulator
US20080237811A1 (en) * 2007-03-30 2008-10-02 Rohit Pal Method for preserving processing history on a wafer
US8211717B1 (en) 2011-01-26 2012-07-03 International Business Machines Corporation SEM repair for sub-optimal features
CN102539476A (zh) * 2011-10-12 2012-07-04 上海华力微电子有限公司 一种光阻穿透效果的简易测试方法
US9310317B2 (en) 2012-01-25 2016-04-12 The Boeing Company Automated system and method for tracking and detecting discrepancies on a target object
US9672316B2 (en) 2013-07-17 2017-06-06 Arm Limited Integrated circuit manufacture using direct write lithography
CN104425308B (zh) * 2013-09-09 2018-03-09 东京毅力科创株式会社 测定装置、基板处理系统和测定方法
JP6246673B2 (ja) * 2013-09-09 2017-12-13 東京エレクトロン株式会社 測定装置、基板処理システムおよび測定方法
US9269640B2 (en) 2013-10-31 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Repairing monolithic stacked integrated circuits with a redundant layer and lithography process
CN105140163A (zh) * 2015-07-22 2015-12-09 上海华力微电子有限公司 一种提高光刻对准和套刻精度的方法
US9842782B2 (en) * 2016-03-25 2017-12-12 Mikro Mesa Technology Co., Ltd. Intermediate structure for transfer, method for preparing micro-device for transfer, and method for processing array of semiconductor device
CN111275695B (zh) * 2020-02-10 2023-06-02 上海集成电路研发中心有限公司 一种半导体器件的缺陷检查方法、装置和可读存储介质

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
DE69322667D1 (de) * 1992-02-18 1999-02-04 Elm Technology Corp Lithographie nach Bedarf für integrierte Schaltungen
US6205239B1 (en) 1996-05-31 2001-03-20 Texas Instruments Incorporated System and method for circuit repair
US5801088A (en) * 1996-07-17 1998-09-01 Advanced Micro Devices, Inc. Method of forming a gate electrode for an IGFET
US5795685A (en) * 1997-01-14 1998-08-18 International Business Machines Corporation Simple repair method for phase shifting masks
US6091845A (en) * 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
JP2000019718A (ja) * 1998-07-01 2000-01-21 Fujitsu Ltd パターンの修正方法及び修正装置
TW498435B (en) * 2000-08-15 2002-08-11 Hitachi Ltd Method of producing semiconductor integrated circuit device and method of producing multi-chip module
US6557162B1 (en) * 2000-09-29 2003-04-29 Numerical Technologies, Inc. Method for high yield reticle formation
US6582861B2 (en) * 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
US6967168B2 (en) * 2001-06-29 2005-11-22 The Euv Limited Liability Corporation Method to repair localized amplitude defects in a EUV lithography mask blank
US6897455B2 (en) * 2002-01-07 2005-05-24 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for repairing resist latent images
JP3711083B2 (ja) * 2002-04-12 2005-10-26 株式会社東芝 パターン形成方法
US20030228047A1 (en) * 2002-06-07 2003-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask transparent substrate protection during removal of opaque photomask defects
CN1237340C (zh) * 2002-12-09 2006-01-18 铼宝科技股份有限公司 检测修复系统及检测修复方法
US7005219B2 (en) * 2003-05-08 2006-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Defect repair method employing non-defective pattern overlay and photoexposure
TWI325495B (en) * 2003-05-09 2010-06-01 Olympus Corp Defect repair system and method of repairing defect
KR100541052B1 (ko) * 2003-09-22 2006-01-11 삼성전자주식회사 자유 캐리어의 생성 기술을 사용하여 반도체 물질을레이저 열처리하는 공정
US7198961B2 (en) * 2004-03-30 2007-04-03 Matsushita Electric Industrial Co., Ltd. Method for modifying existing micro-and nano-structures using a near-field scanning optical microscope
US7307001B2 (en) * 2005-01-05 2007-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer repair method using direct-writing

Also Published As

Publication number Publication date
CN1822314A (zh) 2006-08-23
KR20060080644A (ko) 2006-07-10
US20080054191A1 (en) 2008-03-06
US7307001B2 (en) 2007-12-11
KR100746456B1 (ko) 2007-08-03
JP2006237575A (ja) 2006-09-07
TW200629359A (en) 2006-08-16
TWI295479B (en) 2008-04-01
NL1030823C2 (nl) 2011-08-30
US20060148109A1 (en) 2006-07-06
US8180141B2 (en) 2012-05-15
CN100367454C (zh) 2008-02-06
JP4560487B2 (ja) 2010-10-13

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