NL1010698A1 - Halfgeleider lichtemitterende inrichting met een GaN-gebaseerde halfgeleiderlaag, werkwijze voor het vervaardigen daarvan en een werkwijze voor het vervaardigen van een GaN-gebaseerde halfgeleiderlaag. - Google Patents

Halfgeleider lichtemitterende inrichting met een GaN-gebaseerde halfgeleiderlaag, werkwijze voor het vervaardigen daarvan en een werkwijze voor het vervaardigen van een GaN-gebaseerde halfgeleiderlaag.

Info

Publication number
NL1010698A1
NL1010698A1 NL1010698A NL1010698A NL1010698A1 NL 1010698 A1 NL1010698 A1 NL 1010698A1 NL 1010698 A NL1010698 A NL 1010698A NL 1010698 A NL1010698 A NL 1010698A NL 1010698 A1 NL1010698 A1 NL 1010698A1
Authority
NL
Netherlands
Prior art keywords
gan
manufacturing
semiconductor layer
based semiconductor
emitting device
Prior art date
Application number
NL1010698A
Other languages
English (en)
Other versions
NL1010698C2 (nl
Inventor
Yasushi Nanishi
Michio Kadota
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of NL1010698A1 publication Critical patent/NL1010698A1/nl
Application granted granted Critical
Publication of NL1010698C2 publication Critical patent/NL1010698C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
NL1010698A 1997-12-02 1998-12-02 Halfgeleider lichtemitterende inrichting met een GaN-gebaseerde halfgeleiderlaag, werkwijze voor het vervaardigen daarvan en een werkwijze voor het vervaardigen van een GaN-gebaseerde halfgeleiderlaag. NL1010698C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33188497 1997-12-02
JP33188497 1997-12-02

Publications (2)

Publication Number Publication Date
NL1010698A1 true NL1010698A1 (nl) 1999-06-03
NL1010698C2 NL1010698C2 (nl) 1999-09-15

Family

ID=18248709

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1010698A NL1010698C2 (nl) 1997-12-02 1998-12-02 Halfgeleider lichtemitterende inrichting met een GaN-gebaseerde halfgeleiderlaag, werkwijze voor het vervaardigen daarvan en een werkwijze voor het vervaardigen van een GaN-gebaseerde halfgeleiderlaag.

Country Status (3)

Country Link
US (2) US6146916A (nl)
DE (1) DE19855476A1 (nl)
NL (1) NL1010698C2 (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19931149B4 (de) * 1998-07-06 2005-09-15 Murata Mfg. Co., Ltd., Nagaokakyo Optoelektronische integrierte Schaltvorrichtung

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US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH11274467A (ja) * 1998-03-26 1999-10-08 Murata Mfg Co Ltd 光電子集積回路素子
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
JP4712169B2 (ja) * 1999-09-10 2011-06-29 シャープ株式会社 窒化物系半導体レーザ素子および光学式情報再生装置
JP2001217456A (ja) * 2000-02-03 2001-08-10 Sharp Corp 窒化ガリウム系化合物半導体発光素子
GB2362263A (en) * 2000-05-12 2001-11-14 Juses Chao Amorphous and polycrystalline growth of gallium nitride-based semiconductors
US6936488B2 (en) * 2000-10-23 2005-08-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US7615780B2 (en) * 2000-10-23 2009-11-10 General Electric Company DNA biosensor and methods for making and using the same
US20030012984A1 (en) * 2001-07-11 2003-01-16 Tetsuzo Ueda Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
CN1300901C (zh) * 2001-10-26 2007-02-14 波兰商艾蒙诺公司 使用氮化物块状单晶层的发光元件结构
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US7215691B2 (en) * 2002-09-19 2007-05-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
PL224993B1 (pl) * 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
EP1712662A4 (en) * 2003-06-30 2009-12-02 Kenichiro Miyahara SUBSTRATE FOR THE MANUFACTURE OF THIN FILMS, SUBSTRATE FOR THIN FILMS AND LIGHT EMITTING ELEMENT
JPWO2005006420A1 (ja) * 2003-07-15 2006-09-28 財団法人神奈川科学技術アカデミー 窒化物半導体素子並びにその作製方法
JP4766845B2 (ja) * 2003-07-25 2011-09-07 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
KR100631905B1 (ko) * 2005-02-22 2006-10-11 삼성전기주식회사 질화물 단결정 기판 제조방법 및 이를 이용한 질화물 반도체 발광소자 제조방법
WO2006104935A2 (en) * 2005-03-28 2006-10-05 Goldeneye,Inc. Light emitting diodes and methods of fabrication
CN1309020C (zh) * 2005-04-19 2007-04-04 中国科学院物理研究所 一种在铝酸镁衬底上制备ZnO单晶薄膜的方法
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
JP5262206B2 (ja) * 2008-03-12 2013-08-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体層の製造方法及びｉｉｉ族窒化物半導体発光素子の製造方法
KR101497953B1 (ko) 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
CN101494269B (zh) * 2008-12-18 2010-05-12 济南大学 一种用缓冲层制备氧化锌薄膜的方法
TWI471913B (zh) * 2009-07-02 2015-02-01 Global Wafers Co Ltd Production method of gallium nitride based compound semiconductor
CN102255020B (zh) * 2010-08-02 2013-04-17 中山大学佛山研究院 一种垂直结构氮化镓发光二极管的外延片及其制造方法
US9997353B1 (en) * 2010-12-24 2018-06-12 Ananda H. Kumar Silicon composite substrates

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JP2795226B2 (ja) * 1995-07-27 1998-09-10 日本電気株式会社 半導体発光素子及びその製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19931149B4 (de) * 1998-07-06 2005-09-15 Murata Mfg. Co., Ltd., Nagaokakyo Optoelektronische integrierte Schaltvorrichtung

Also Published As

Publication number Publication date
NL1010698C2 (nl) 1999-09-15
US6146916A (en) 2000-11-14
DE19855476A1 (de) 1999-06-17
US6362496B1 (en) 2002-03-26

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Legal Events

Date Code Title Description
AD1B A search report has been drawn up
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 19990714

MK Patent expired because of reaching the maximum lifetime of a patent

Effective date: 20181201