NL1003705C2 - Dunne-film-zonnecel. - Google Patents
Dunne-film-zonnecel. Download PDFInfo
- Publication number
- NL1003705C2 NL1003705C2 NL1003705A NL1003705A NL1003705C2 NL 1003705 C2 NL1003705 C2 NL 1003705C2 NL 1003705 A NL1003705 A NL 1003705A NL 1003705 A NL1003705 A NL 1003705A NL 1003705 C2 NL1003705 C2 NL 1003705C2
- Authority
- NL
- Netherlands
- Prior art keywords
- film solar
- solar cell
- doped
- thin
- layer
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 84
- 239000000463 material Substances 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 33
- 230000007704 transition Effects 0.000 description 13
- 239000002800 charge carrier Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1003705A NL1003705C2 (nl) | 1996-07-30 | 1996-07-30 | Dunne-film-zonnecel. |
| EP97934785A EP0958615A1 (en) | 1996-07-30 | 1997-07-30 | Thin-film solar cell |
| PCT/NL1997/000446 WO1998005077A1 (en) | 1996-07-30 | 1997-07-30 | Thin-film solar cell |
| JP10508300A JPH11514799A (ja) | 1996-07-30 | 1997-07-30 | 薄膜型光起電力素子 |
| AU37867/97A AU3786797A (en) | 1996-07-30 | 1997-07-30 | Thin-film solar cell |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1003705 | 1996-07-30 | ||
| NL1003705A NL1003705C2 (nl) | 1996-07-30 | 1996-07-30 | Dunne-film-zonnecel. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL1003705C2 true NL1003705C2 (nl) | 1998-02-05 |
Family
ID=19763293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1003705A NL1003705C2 (nl) | 1996-07-30 | 1996-07-30 | Dunne-film-zonnecel. |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0958615A1 (ja) |
| JP (1) | JPH11514799A (ja) |
| AU (1) | AU3786797A (ja) |
| NL (1) | NL1003705C2 (ja) |
| WO (1) | WO1998005077A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100431177C (zh) * | 2003-09-24 | 2008-11-05 | 三洋电机株式会社 | 光生伏打元件及其制造方法 |
| JP4775906B2 (ja) * | 2005-11-29 | 2011-09-21 | 日東電工株式会社 | 光起電力装置及びその製造方法 |
| TW201322465A (zh) * | 2011-11-29 | 2013-06-01 | Ind Tech Res Inst | 全背電極異質接面太陽能電池 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2986591A (en) * | 1955-10-17 | 1961-05-30 | Ibm | Photovoltaic cell |
| US4498092A (en) * | 1980-09-16 | 1985-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectric conversion device |
-
1996
- 1996-07-30 NL NL1003705A patent/NL1003705C2/nl not_active IP Right Cessation
-
1997
- 1997-07-30 EP EP97934785A patent/EP0958615A1/en not_active Withdrawn
- 1997-07-30 JP JP10508300A patent/JPH11514799A/ja active Pending
- 1997-07-30 WO PCT/NL1997/000446 patent/WO1998005077A1/en not_active Application Discontinuation
- 1997-07-30 AU AU37867/97A patent/AU3786797A/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2986591A (en) * | 1955-10-17 | 1961-05-30 | Ibm | Photovoltaic cell |
| US4498092A (en) * | 1980-09-16 | 1985-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectric conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| AU3786797A (en) | 1998-02-20 |
| JPH11514799A (ja) | 1999-12-14 |
| EP0958615A1 (en) | 1999-11-24 |
| WO1998005077A1 (en) | 1998-02-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PD2B | A search report has been drawn up | ||
| VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20010201 |