MY6900259A - Production of dislocation - free single crystals of semiconductor material - Google Patents

Production of dislocation - free single crystals of semiconductor material

Info

Publication number
MY6900259A
MY6900259A MY1969259A MY6900259A MY6900259A MY 6900259 A MY6900259 A MY 6900259A MY 1969259 A MY1969259 A MY 1969259A MY 6900259 A MY6900259 A MY 6900259A MY 6900259 A MY6900259 A MY 6900259A
Authority
MY
Malaysia
Prior art keywords
dislocation
production
semiconductor material
single crystals
free single
Prior art date
Application number
MY1969259A
Other languages
English (en)
Original Assignee
Texas Instruments Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US316347A external-priority patent/US3275417A/en
Application filed by Texas Instruments Incorporated filed Critical Texas Instruments Incorporated
Publication of MY6900259A publication Critical patent/MY6900259A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
MY1969259A 1963-10-15 1969-12-31 Production of dislocation - free single crystals of semiconductor material MY6900259A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US316347A US3275417A (en) 1963-10-15 1963-10-15 Production of dislocation-free silicon single crystals
US493955A US3397042A (en) 1963-10-15 1965-08-27 Production of dislocation-free silicon single crystals

Publications (1)

Publication Number Publication Date
MY6900259A true MY6900259A (en) 1969-12-31

Family

ID=26980387

Family Applications (1)

Application Number Title Priority Date Filing Date
MY1969259A MY6900259A (en) 1963-10-15 1969-12-31 Production of dislocation - free single crystals of semiconductor material

Country Status (6)

Country Link
US (1) US3397042A (de)
JP (1) JPS4817986B1 (de)
DE (1) DE1519912C2 (de)
GB (1) GB1075706A (de)
MY (1) MY6900259A (de)
NL (1) NL6411697A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1619994B2 (de) * 1967-03-09 1976-07-15 Siemens AG, 1000 Berlin und 8000 München Verfahren zum zuechten eines stabfoermigen, versetzungsfreien einkristalls aus silicium durch tiegelfreies zonenschmelzen
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing
JPS52107183A (en) * 1976-03-06 1977-09-08 Toshitaka Okamoto Electric stand shade
JPS5374781A (en) * 1976-12-16 1978-07-03 Imagawa Yasuhito Foldable lamp shade
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
JPS546383A (en) * 1977-06-16 1979-01-18 Yasuhito Imagawa Foldable lamp shade
DE3421538A1 (de) * 1984-06-08 1985-12-12 ATOMIKA Technische Physik GmbH, 8000 München Vakuumaufdampfeinrichtung
DE102014226419A1 (de) * 2014-12-18 2016-06-23 Siltronic Ag Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA674121A (en) * 1963-11-12 Siemens-Schuckertwerke Aktiengesellschaft Method and apparatus for producing a strip of hyperpure semiconductor material
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
DE1153908B (de) * 1958-04-22 1963-09-05 Siemens Ag Verfahren und Vorrichtung zum tiegellosen Zonenschmelzen mit Abstandsaenderung der Stabenden
US2905798A (en) * 1958-09-15 1959-09-22 Lindberg Eng Co Induction heating apparatus
NL253526A (de) * 1959-08-14
NL255530A (de) * 1959-09-11
FR1282910A (fr) * 1960-03-01 1962-01-27 Thomson Houston Comp Francaise Méthode de croissance sans dislocation de cristaux de semi-conducteur
US3135585A (en) * 1960-03-01 1964-06-02 Gen Electric Method of growing dislocation-free semiconductor crystals
NL269311A (de) * 1960-09-20
GB926487A (en) * 1960-11-25 1963-05-22 Dorman & Smith Ltd Improvements in and relating to electrical fuse assemblies
NL129916C (de) * 1961-02-07

Also Published As

Publication number Publication date
JPS4817986B1 (de) 1973-06-02
US3397042A (en) 1968-08-13
GB1075706A (en) 1967-07-12
DE1519912C2 (de) 1974-10-03
NL6411697A (de) 1965-04-20
DE1519912B1 (de) 1970-06-18

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