MY192234A - Wafer processing method - Google Patents
Wafer processing methodInfo
- Publication number
- MY192234A MY192234A MYPI2018702434A MYPI2018702434A MY192234A MY 192234 A MY192234 A MY 192234A MY PI2018702434 A MYPI2018702434 A MY PI2018702434A MY PI2018702434 A MYPI2018702434 A MY PI2018702434A MY 192234 A MY192234 A MY 192234A
- Authority
- MY
- Malaysia
- Prior art keywords
- wafer
- cut groove
- front surface
- cut
- picked
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/0008—Industrial image inspection checking presence/absence
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8213—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using SiC technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10048—Infrared image
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Abstract
A cutting method includes: disposing a dicing tape (105) on a back surface (104) of a wafer (100); holding the wafer (100) on a chuck table (10) through the dicing tape (105); causing a cutting blade (21) to cut into the wafer (100) held on the chuck table (10) until the tip of the cutting blade (21) reaches the dicing tape (105) to form cut grooves (107); imaging the cut groove (107) from the front surface (101) side of the wafer (100) by a first imaging section to form a picked-up image (80A) of a front surface (101) portion of the cut groove (107), and imaging the cut groove (107) from the front surface (101) side of the wafer (100) by a second imaging section to form a picked-up image (80B) of a back surface (104) portion of the cut groove (107), thereby checking the picked-up images (80A) of the front surface (101) portion and the back surface (104) portion of the cut groove (107). The most suitable drawing: Fig 3.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017146720A JP6979296B2 (en) | 2017-07-28 | 2017-07-28 | Cutting method |
Publications (1)
Publication Number | Publication Date |
---|---|
MY192234A true MY192234A (en) | 2022-08-10 |
Family
ID=65004395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2018702434A MY192234A (en) | 2017-07-28 | 2018-07-12 | Wafer processing method |
Country Status (5)
Country | Link |
---|---|
US (1) | US11171056B2 (en) |
JP (1) | JP6979296B2 (en) |
DE (1) | DE102018212588A1 (en) |
MY (1) | MY192234A (en) |
TW (1) | TWI780190B (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6577404B2 (en) * | 2016-04-05 | 2019-09-18 | ファナック株式会社 | Throttle unit, hydrostatic bearing device including the same, and method for manufacturing grooved block |
JP6812079B2 (en) * | 2017-03-13 | 2021-01-13 | 株式会社ディスコ | Processing method of work piece |
JP7184620B2 (en) * | 2018-12-11 | 2022-12-06 | 株式会社ディスコ | cutting equipment |
JP7282461B2 (en) * | 2019-04-16 | 2023-05-29 | 株式会社ディスコ | Inspection equipment and processing equipment |
JP7325897B2 (en) * | 2019-04-18 | 2023-08-15 | 株式会社ディスコ | Machining device and machining method of workpiece |
JP7343293B2 (en) * | 2019-04-18 | 2023-09-12 | 株式会社ディスコ | Division processing device |
JP7366637B2 (en) * | 2019-08-16 | 2023-10-23 | 株式会社ディスコ | Workpiece confirmation method and processing method |
JP7382762B2 (en) * | 2019-08-27 | 2023-11-17 | 株式会社ディスコ | How to judge the quality of processing results of laser processing equipment |
JP7430449B2 (en) * | 2020-02-04 | 2024-02-13 | 株式会社ディスコ | processing equipment |
JP7430451B2 (en) * | 2020-04-02 | 2024-02-13 | 株式会社ディスコ | cutting equipment |
KR20220001451A (en) | 2020-06-29 | 2022-01-05 | 가부시기가이샤 디스코 | Processing apparatus |
KR20220001450A (en) * | 2020-06-29 | 2022-01-05 | 가부시기가이샤 디스코 | Processing apparatus |
CN111761747B (en) * | 2020-07-09 | 2022-07-29 | 深圳市佰创力科技有限公司 | Perforating device is used in processing of IC semiconductor chip |
JP2022038528A (en) * | 2020-08-27 | 2022-03-10 | 株式会社ディスコ | Processing apparatus |
JP2022124134A (en) * | 2021-02-15 | 2022-08-25 | 株式会社ディスコ | Processing method for workpiece |
CN114597126A (en) * | 2022-03-10 | 2022-06-07 | 江苏汇成光电有限公司 | Slicing method for processing wafer cutting abnormity |
CN114864750A (en) * | 2022-05-17 | 2022-08-05 | 通威太阳能(合肥)有限公司 | Battery piece slicing method, battery piece slicing system, storage medium and computer |
CN114755814B (en) * | 2022-06-13 | 2022-09-13 | 沈阳和研科技有限公司 | Novel microscope structure capable of being used for back cutting of scribing machine and scribing machine |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3868056B2 (en) * | 1997-05-07 | 2007-01-17 | 株式会社ディスコ | Wafer chipping detection method |
JPH10312979A (en) * | 1997-05-12 | 1998-11-24 | Disco Abrasive Syst Ltd | Method for detecting cutting state of wafer |
JP3813692B2 (en) * | 1997-05-28 | 2006-08-23 | 株式会社ディスコ | Method for detecting special pattern inside semiconductor wafer in dicing machine |
JP2003203883A (en) * | 2002-01-07 | 2003-07-18 | Tokyo Seimitsu Co Ltd | Microscope and observing method |
JP4381755B2 (en) * | 2003-09-09 | 2009-12-09 | 株式会社ディスコ | Cutting equipment |
JP2005129607A (en) * | 2003-10-22 | 2005-05-19 | Disco Abrasive Syst Ltd | Method of dividing wafer |
US7494900B2 (en) * | 2006-05-25 | 2009-02-24 | Electro Scientific Industries, Inc. | Back side wafer dicing |
JP2008112884A (en) * | 2006-10-31 | 2008-05-15 | Disco Abrasive Syst Ltd | Processing method of wafer |
JP4102842B1 (en) * | 2006-12-04 | 2008-06-18 | 東京エレクトロン株式会社 | Defect detection device, defect detection method, information processing device, information processing method, and program thereof |
JP5134412B2 (en) | 2008-03-28 | 2013-01-30 | 株式会社ディスコ | Chipping detection method |
JP2011033449A (en) * | 2009-07-31 | 2011-02-17 | Sumco Corp | Method and apparatus for defect inspection of wafer |
JP5508108B2 (en) * | 2010-04-15 | 2014-05-28 | 株式会社ディスコ | Manufacturing method of semiconductor device |
JP5743958B2 (en) * | 2012-05-30 | 2015-07-01 | キヤノン株式会社 | Measuring method, exposure method and apparatus |
JP5995616B2 (en) * | 2012-09-05 | 2016-09-21 | 株式会社ディスコ | Wafer processing method |
US8952497B2 (en) * | 2012-09-14 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Scribe lines in wafers |
JP6184855B2 (en) * | 2013-12-16 | 2017-08-23 | 株式会社ディスコ | Package substrate division method |
JP6465722B2 (en) * | 2015-04-06 | 2019-02-06 | 株式会社ディスコ | Processing equipment |
US20180019139A1 (en) * | 2016-07-12 | 2018-01-18 | Ayar Labs, Inc. | Wafer-Level Etching Methods for Planar Photonics Circuits and Devices |
-
2017
- 2017-07-28 JP JP2017146720A patent/JP6979296B2/en active Active
-
2018
- 2018-07-12 MY MYPI2018702434A patent/MY192234A/en unknown
- 2018-07-20 US US16/041,035 patent/US11171056B2/en active Active
- 2018-07-25 TW TW107125714A patent/TWI780190B/en active
- 2018-07-27 DE DE102018212588.0A patent/DE102018212588A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
DE102018212588A1 (en) | 2019-01-31 |
JP2019025583A (en) | 2019-02-21 |
TW201911443A (en) | 2019-03-16 |
US11171056B2 (en) | 2021-11-09 |
US20190035689A1 (en) | 2019-01-31 |
TWI780190B (en) | 2022-10-11 |
JP6979296B2 (en) | 2021-12-08 |
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