JP6979296B2 - Cutting method - Google Patents

Cutting method Download PDF

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JP6979296B2
JP6979296B2 JP2017146720A JP2017146720A JP6979296B2 JP 6979296 B2 JP6979296 B2 JP 6979296B2 JP 2017146720 A JP2017146720 A JP 2017146720A JP 2017146720 A JP2017146720 A JP 2017146720A JP 6979296 B2 JP6979296 B2 JP 6979296B2
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cutting
cutting groove
back surface
workpiece
image
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JP2019025583A (en
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直子 山本
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Disco Corp
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Disco Corp
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Priority to MYPI2018702434A priority patent/MY192234A/en
Priority to US16/041,035 priority patent/US11171056B2/en
Priority to TW107125714A priority patent/TWI780190B/en
Priority to DE102018212588.0A priority patent/DE102018212588A1/en
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
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    • G—PHYSICS
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8213—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using SiC technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10048—Infrared image
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Description

本発明は、切削予定ラインを有する被加工物を切削ブレードで切削する切削方法に関する。 The present invention relates to a cutting method for cutting a workpiece having a scheduled cutting line with a cutting blade.

半導体ウエーハやガラス基板等の被加工物は、例えば、回転する円環状の切削ブレードを備える切削装置によって切削予定ラインに沿って切削され、複数のチップへと分割される。このような切削ブレードによる分割が行われる場合、通常、切削後に、被加工物が切削予定ラインに沿って適正に分割されたか否か、あるいは、分割のために形成される切削溝にチッピング（欠け）が生じていないか否か、などに関するカーフチェックが行われる。この種のカーフチェックは、一般に、切削された切削溝を撮像手段によって撮像することにより行われる（例えば、特許文献１参照）。このカーフチェックにおいて、切削溝におけるチッピングの有無やカーフ幅（切削溝幅）が許容値内に入っているか否かを確認し、不具合が発生した場合には、切削ブレードの位置の補正などの対処を行っている。 A workpiece such as a semiconductor wafer or a glass substrate is cut along a scheduled cutting line by a cutting device provided with a rotating annular cutting blade, and is divided into a plurality of chips. When such a division is performed by a cutting blade, usually, after cutting, whether or not the workpiece is properly divided along the planned cutting line, or chipping (chip) in the cutting groove formed for the division. ) Is not generated, and a calf check is performed. This type of calf check is generally performed by imaging a cut groove with an imaging means (see, for example, Patent Document 1). In this calf check, check whether there is chipping in the cutting groove and whether the calf width (cutting groove width) is within the allowable value, and if a problem occurs, take measures such as correcting the position of the cutting blade. It is carried out.

特開２００９−２４６０１５号公報Japanese Unexamined Patent Publication No. 2009-246015

しかしながら、従来の構成では、切削溝を撮像してカーフチェックする際に、被加工物の表面側の切削溝しか確認していないため、例えば、被加工物の裏面側で許容値以上のチッピングやクラックが発生していたり、切削溝が切削予定ラインから許容値以上の位置ずれしている場合、被加工物全体を加工した後に、これらの不具合が発覚することにより不良チップが製造されてしまうおそれがあった。 However, in the conventional configuration, when the cutting groove is imaged and the calf is checked, only the cutting groove on the front surface side of the workpiece is confirmed. If cracks occur or the cutting groove deviates from the planned cutting line by more than the allowable value, there is a risk that defective chips will be manufactured due to the discovery of these defects after machining the entire workpiece. was there.

本発明は、上記に鑑みてなされたものであって、不良チップが製造されるおそれを低減できる切削方法を提供することを目的とする。 The present invention has been made in view of the above, and an object of the present invention is to provide a cutting method capable of reducing the risk of producing defective chips.

上述した課題を解決し、目的を達成するために、本発明は、切削予定ラインを有した被加工物を切削ブレードで切削する切削方法であって、被加工物の裏面に保持部材を配設する保持部材配設ステップと、該保持部材を介して被加工物を保持テーブルで保持する保持ステップと、該保持テーブルで保持された被加工物に対して該切削ブレードの先端が該保持部材に至るまで該切削ブレードを切り込ませ該切削予定ラインに沿って該切削ブレードで被加工物を切削して該保持部材に至る切削溝を形成する切削ステップと、該切削ステップで形成された該切削溝を被加工物の表面側から撮像カメラで撮像して被加工物の該表面における該切削溝の撮像画像を形成する表面側切削溝撮像ステップと、該切削溝を被加工物の該表面側から赤外線カメラで撮像して被加工物の該裏面における該切削溝の撮像画像を形成する裏面側切削溝撮像ステップと、該表面と該裏面における該切削溝を確認する確認ステップと、を備え、該表面側切削溝撮像ステップと該裏面側切削溝撮像ステップとでは、同一の座標位置における切削溝の表面及び裏面の撮像画像を得て、該確認ステップでは、該切削溝の斜め切り又は先細りを検出するものである。
また、該確認ステップでは、同一の座標位置における該表面側の切削溝の撮像画像と、該裏面側の該切削溝の撮像画像とを表示部に並べて表示しても良い。 In order to solve the above-mentioned problems and achieve the object, the present invention is a cutting method for cutting a work piece having a planned cutting line with a cutting blade, and a holding member is arranged on the back surface of the work piece. The holding member disposing step, the holding step of holding the workpiece on the holding table via the holding member, and the tip of the cutting blade on the holding member with respect to the workpiece held by the holding table. A cutting step in which the cutting blade is cut to the point where the work piece is cut along the scheduled cutting line to form a cutting groove leading to the holding member, and the cutting formed in the cutting step. and the surface side cutting groove imaging step of imaging by the imaging camera grooves from the surface of the workpiece to form a captured image該切Kezumizo in the surface of the workpiece, the surface side of the workpiece the cutting grooves It is provided with a back surface side cutting groove imaging step of forming an image of the cutting groove on the back surface of the workpiece by imaging with an infrared camera, and a confirmation step of confirming the cutting groove on the front surface and the back surface. In the front side cutting groove imaging step and the back surface side cutting groove imaging step, captured images of the front surface and the back surface of the cutting groove at the same coordinate position are obtained, and in the confirmation step, diagonal cutting or tapering of the cutting groove is detected. it is intended to.
Further, in the confirmation step, the captured image of the cutting groove on the front surface side and the captured image of the cutting groove on the back surface side at the same coordinate position may be displayed side by side on the display unit.

この構成によれば、被加工物の表面側から被加工物の表面及び裏面における切削溝をそれぞれ撮像し、この撮像画像に基づいて、表面と裏面における切削溝を確認することにより、裏面側で許容値以上のチッピング等の不具合が発生した場合でも即座に検出できるため、不良チップが製造されるおそれを低減することができる。 According to this configuration, the cutting grooves on the front surface and the back surface of the workpiece are imaged from the front surface side of the workpiece, respectively, and the cutting grooves on the front surface and the back surface are confirmed based on the captured images, so that the cutting grooves on the front surface and the back surface are confirmed on the back surface side. Even if a defect such as chipping that exceeds the permissible value occurs, it can be detected immediately, so that the possibility that a defective chip is manufactured can be reduced.

この構成において、撮像カメラは、赤外線カメラで兼用する構成としてもよい。この構成によれば、１台の赤外線カメラで、被加工物の表面及び裏面における切削溝を撮像できるため、カメラの切り換え動作が不要となり、被加工物を撮像する際の作業工程が簡素化される。 In this configuration, the image pickup camera may be configured to be shared with an infrared camera. According to this configuration, since it is possible to image the cutting grooves on the front surface and the back surface of the workpiece with one infrared camera, the switching operation of the cameras becomes unnecessary, and the work process when imaging the workpiece is simplified. To.

また、該確認ステップでは、該赤外線カメラの焦点を被加工物の該表面に位置づけて該表面における該切削溝を撮像し、該赤外線カメラの該焦点を被加工物の該裏面に位置づけて該裏面における該切削溝を撮像してもよい。この構成によれば、赤外線カメラの焦点を調整することで、被加工物の表面及び裏面における切削溝をそれぞれ撮像できるため、撮像する際の作業工程を簡素化できる。 Further, in the confirmation step, the focus of the infrared camera is positioned on the front surface of the workpiece to image the cutting groove on the surface, and the focus of the infrared camera is positioned on the back surface of the workpiece. The cutting groove in the image may be imaged. According to this configuration, by adjusting the focus of the infrared camera, the cutting grooves on the front surface and the back surface of the workpiece can be imaged, respectively, so that the work process at the time of imaging can be simplified.

本発明によれば、被加工物の表面側から被加工物の表面及び裏面における切削溝をそれぞれ撮像し、この撮像画像に基づいて、表面と裏面における切削溝を確認することにより、裏面側で許容値以上のチッピング等の不具合が発生した場合でも即座に検出できるため、不良チップが製造されるおそれを低減することができる。 According to the present invention, the cutting grooves on the front surface and the back surface of the workpiece are imaged from the front surface side of the workpiece, respectively, and the cutting grooves on the front surface and the back surface are confirmed based on the captured images, thereby on the back surface side. Even if a defect such as chipping that exceeds the permissible value occurs, it can be detected immediately, so that the possibility that a defective chip is manufactured can be reduced.

図１は、本実施形態に係る切削方法に用いられる切削装置の構成例を示す斜視図である。FIG. 1 is a perspective view showing a configuration example of a cutting device used in the cutting method according to the present embodiment. 図２は、環状フレームに支持された被加工物の一例を示す斜視図である。FIG. 2 is a perspective view showing an example of a workpiece supported by an annular frame. 図３は、ウエーハの切削方法の手順を示すフローチャートである。FIG. 3 is a flowchart showing a procedure of a wafer cutting method. 図４は、環状フレームにダイシングテープを介して支持されたウエーハをチャックテーブルに保持した状態を示す側面図である。FIG. 4 is a side view showing a state in which a wafer supported by a dicing tape on an annular frame is held on a chuck table. 図５は、チャックテーブルに保持されたウエーハを切削手段によって切削している状態を示す側面図である。FIG. 5 is a side view showing a state in which the wafer held on the chuck table is being cut by the cutting means. 図６は、第１撮像手段を用いて、チャックテーブルに保持されたウエーハの切削溝の表面側を撮像する状態を示す側面図である。FIG. 6 is a side view showing a state in which the surface side of the cutting groove of the wafer held on the chuck table is imaged by using the first image pickup means. 図７は、第２撮像手段を用いて、チャックテーブルに保持されたウエーハの切削溝の裏面側を撮像する状態を示す側面図である。FIG. 7 is a side view showing a state in which the back surface side of the cutting groove of the wafer held on the chuck table is imaged by using the second imaging means. 図８は、第１撮像手段が撮像した表面側切削溝撮像画像の一例と第２撮像手段が撮像した裏面側切削溝撮像画像の一例とを並べて配置した図である。FIG. 8 is a diagram in which an example of a front side cutting groove image captured by the first image pickup means and an example of a back surface side cutting groove image captured by the second image pickup means are arranged side by side. 図９は、表面側切削溝撮像画像と裏面側切削溝撮像画像とから想定される切削溝の形状の一例を示すウエーハの部分断面図である。FIG. 9 is a partial cross-sectional view of a wafer showing an example of the shape of the cutting groove assumed from the image of the cutting groove on the front side and the image of the cutting groove on the back side. 図１０は、第１撮像手段が撮像した表面側切削溝撮像画像の他の一例と第２撮像手段が撮像した裏面側切削溝撮像画像の他の一例とを並べて配置した図である。FIG. 10 is a diagram in which another example of the front side cutting groove image captured by the first image pickup means and another example of the back surface side cutting groove image taken by the second image pickup means are arranged side by side. 図１１は、表面側切削溝撮像画像と裏面側切削溝撮像画像とから想定される切削溝の形状の一例を示すウエーハの部分断面図である。FIG. 11 is a partial cross-sectional view of a wafer showing an example of the shape of the cutting groove assumed from the image of the cutting groove on the front surface side and the image of the cutting groove on the back surface side.

本発明を実施するための形態（実施形態）につき、図面を参照しつつ詳細に説明する。以下の実施形態に記載した内容により本発明が限定されるものではない。また、以下に記載した構成要素には、当業者が容易に想定できるもの、実質的に同一のものが含まれる。さらに、以下に記載した構成は適宜組み合わせることが可能である。また、本発明の要旨を逸脱しない範囲で構成の種々の省略、置換又は変更を行うことができる。 An embodiment (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. In addition, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. In addition, various omissions, substitutions or changes of the configuration can be made without departing from the gist of the present invention.

以下、本実施形態に係る被加工物の切削方法について説明する。図１は、本実施形態に係る切削方法に用いられる切削装置の構成例を示す斜視図である。図２は、環状フレームに支持された被加工物の一例を示す斜視図である。切削装置１は、図１に示すように、チャックテーブル（保持テーブル）１０と切削手段２０とを相対移動させることにより、チャックテーブル１０上に保持されたウエーハ（被加工物）１００（図２参照）を切削加工するものである。切削装置１は、チャックテーブル１０と、切削手段２０と、第１撮像手段３０と、第２撮像手段３５と、Ｘ軸移動手段４０と、Ｙ軸移動手段５０と、Ｚ軸移動手段６０と、制御部７０と、表示部７５とを含んで構成されている。 Hereinafter, the cutting method of the workpiece according to the present embodiment will be described. FIG. 1 is a perspective view showing a configuration example of a cutting device used in the cutting method according to the present embodiment. FIG. 2 is a perspective view showing an example of a workpiece supported by an annular frame. As shown in FIG. 1, the cutting apparatus 1 moves the chuck table (holding table) 10 and the cutting means 20 relative to each other, so that the wafer (workpiece) 100 held on the chuck table 10 (see FIG. 2). ) Is machined. The cutting device 1 includes a chuck table 10, a cutting means 20, a first imaging means 30, a second imaging means 35, an X-axis moving means 40, a Y-axis moving means 50, a Z-axis moving means 60, and the like. It is configured to include a control unit 70 and a display unit 75.

本実施形態の被加工物であるウエーハ１００は、シリコンを母材とする円板状の半導体ウエーハやサファイア、ＳｉＣ（炭化ケイ素）などを母材とする光デバイスウエーハである。ウエーハ１００は、図２に示すように、表面１０１に形成された格子状の分割予定ライン（切削予定ライン）１０２によって区画された複数の領域にデバイス１０３が形成されている。ウエーハ１００は、裏面１０４に貼着されたダイシングテープ（保持部材）１０５を介して、環状フレーム１０６に支持されている。ウエーハ１００は、環状フレーム１０６に支持された状態でチャックテーブル１０上に保持される。なお、被加工物は、分割予定ライン１０２に沿って切削される板状物であれば良く、本実施形態のように、分割予定ライン１０２によって区画された領域にデバイス１０３を有することを要するものではない。また、本実施形態では、保持部材としてダイシングテープ１０５を用いた構成としたが、例えば、シリコンやガラス等のハードプレートを接着剤やワックス、両面テープ等の接着部材を介して被加工物に貼着する構成としてもよい。 The wafer 100, which is the workpiece of the present embodiment, is a disk-shaped semiconductor wafer using silicon as a base material, sapphire, an optical device wafer using SiC (silicon carbide) or the like as a base material. As shown in FIG. 2, in the wafer 100, the device 103 is formed in a plurality of regions partitioned by a grid-shaped scheduled division line (scheduled cutting line) 102 formed on the surface 101. The wafer 100 is supported by the annular frame 106 via a dicing tape (holding member) 105 attached to the back surface 104. The wafer 100 is held on the chuck table 10 in a state of being supported by the annular frame 106. The workpiece may be a plate-shaped object that is cut along the scheduled division line 102, and it is necessary to have the device 103 in the region partitioned by the scheduled division line 102 as in the present embodiment. is not it. Further, in the present embodiment, the dicing tape 105 is used as the holding member, but for example, a hard plate such as silicon or glass is attached to the work piece via an adhesive, wax, or an adhesive member such as double-sided tape. It may be configured to be worn.

チャックテーブル１０は、図１に示すように、多孔性セラミックス等から形成された保持部１１と、この保持部１１の周囲に配設された複数（本実施形態では４個）のクランパ１２とを備える。保持部１１は、環状フレーム１０６に支持されたウエーハ１００をその裏面側から吸引することで保持する。この際、クランパ１２は、環状フレーム１０６を挟んで保持する。また、チャックテーブル１０は、保持部１１の中心軸線を中心に回転可能に構成されており、切削手段２０に対して、任意の回転角度に調整することができる。 As shown in FIG. 1, the chuck table 10 has a holding portion 11 formed of porous ceramics or the like, and a plurality of (4 in this embodiment) clampers 12 arranged around the holding portion 11. Be prepared. The holding portion 11 holds the wafer 100 supported by the annular frame 106 by sucking it from the back surface side thereof. At this time, the clamper 12 sandwiches and holds the annular frame 106. Further, the chuck table 10 is configured to be rotatable around the central axis of the holding portion 11, and can be adjusted to an arbitrary rotation angle with respect to the cutting means 20.

切削手段２０は、切削ブレード２１と、スピンドルと、スピンドルハウジング２３と、切削液供給ノズル２４とを含んでいる。切削手段２０は、チャックテーブル１０に保持されたウエーハ１００（図２）に切削液を供給しながら加工を行う。このとき、切削手段２０は、第１撮像手段３０または第２撮像手段３５によって撮像された被加工物の画像データに基づいて、ウエーハ１００の加工すべき領域を切削ブレード２１により加工する。スピンドルハウジング２３内にはスピンドルが収容され、エアベアリングにより回転可能に支持されている。スピンドルは、スピンドルハウジング２３中に収容されたモータにより回転駆動され、スピンドルの先端側には切削ブレード２１が着脱可能に装着されている。 The cutting means 20 includes a cutting blade 21, a spindle, a spindle housing 23, and a cutting fluid supply nozzle 24. The cutting means 20 performs processing while supplying cutting fluid to the wafer 100 (FIG. 2) held on the chuck table 10. At this time, the cutting means 20 processes the region to be machined on the wafer 100 by the cutting blade 21 based on the image data of the workpiece imaged by the first image pickup means 30 or the second image pickup means 35. A spindle is housed in the spindle housing 23 and is rotatably supported by an air bearing. The spindle is rotationally driven by a motor housed in the spindle housing 23, and a cutting blade 21 is detachably mounted on the tip end side of the spindle.

切削ブレード２１は、チャックテーブル１０に保持された被加工物を切削する。切削ブレード２１は、略リング形状の極薄の切削砥石である。切削液供給ノズル２４は、切削ブレード２１による被加工物の加工中に、被加工物の加工点へ切削液を供給する。 The cutting blade 21 cuts the workpiece held on the chuck table 10. The cutting blade 21 is an ultra-thin cutting wheel having a substantially ring shape. The cutting fluid supply nozzle 24 supplies the cutting fluid to the machining point of the workpiece during the machining of the workpiece by the cutting blade 21.

第１撮像手段（撮像カメラ）３０は、チャックテーブル１０に保持されたウエーハ１００を表面１０１側から撮像してウエーハ１００の表面１０１の画像を生成する。第１撮像手段３０は、例えば、ＣＣＤ（Charge Coupled Device）イメージセンサを備えた顕微鏡等であり、撮像された画像を用いて、ウエーハ１００のアライメント調整が行われる。第２撮像手段（赤外線カメラ）３５は、チャックテーブル１０に保持されたウエーハ１００を表面１０１側から撮像して、少なくともウエーハ１００の裏面１０４の画像を生成する。赤外線（Infrared Rays）は、可視光に比べて波長が長いため、散乱しにくい性質があり、シリコンなどを透過してウエーハ１００の裏面１０４を撮像することができる。もちろん、第２撮像手段（赤外線カメラ）３５を用いて、ウエーハ１００を表面１０１側から撮像して、該表面１０１の画像を生成することも可能である。 The first imaging means (imaging camera) 30 images the wafer 100 held on the chuck table 10 from the surface 101 side to generate an image of the surface 101 of the wafer 100. The first image pickup means 30 is, for example, a microscope provided with a CCD (Charge Coupled Device) image sensor, and the alignment of the wafer 100 is adjusted using the captured image. The second imaging means (infrared camera) 35 images the wafer 100 held on the chuck table 10 from the front surface 101 side to generate an image of at least the back surface 104 of the wafer 100. Since infrared rays (Infrared Rays) have a longer wavelength than visible light, they have a property of being less likely to be scattered, and can transmit silicon or the like to image the back surface 104 of the wafer 100. Of course, it is also possible to use the second imaging means (infrared camera) 35 to image the wafer 100 from the surface 101 side and generate an image of the surface 101.

Ｘ軸移動手段４０は、装置基台２上に搭載されて、チャックテーブル１０を切削送り方向（Ｘ軸方向）に移動させるものである。切削送り方向（Ｘ軸方向）は、鉛直方向と直交する。Ｘ軸移動手段４０は、Ｘ軸パルスモータ４１と、Ｘ軸ボールねじ４２と、一対のＸ軸ガイドレール４３，４３とを含んでいる。一対のＸ軸ガイドレール４３，４３上には、チャックテーブル１０が載置され、このチャックテーブル１０の下部にＸ軸ボールねじ４２が螺合している。Ｘ軸移動手段４０は、Ｘ軸パルスモータ４１により発生した回転力によりＸ軸ボールねじ４２を回転駆動させることで、チャックテーブル１０を一対のＸ軸ガイドレール４３，４３に沿って、装置基台２に対してＸ軸方向に移動させる。 The X-axis moving means 40 is mounted on the apparatus base 2 and moves the chuck table 10 in the cutting feed direction (X-axis direction). The cutting feed direction (X-axis direction) is orthogonal to the vertical direction. The X-axis moving means 40 includes an X-axis pulse motor 41, an X-axis ball screw 42, and a pair of X-axis guide rails 43, 43. A chuck table 10 is placed on the pair of X-axis guide rails 43, 43, and an X-axis ball screw 42 is screwed to the lower portion of the chuck table 10. The X-axis moving means 40 rotates and drives the X-axis ball screw 42 by the rotational force generated by the X-axis pulse motor 41, so that the chuck table 10 is driven along the pair of X-axis guide rails 43, 43. Move in the X-axis direction with respect to 2.

Ｙ軸移動手段５０は、装置基台２上に搭載されて、切削ブレード移動基台３及び切削手段２０を割り出し送り方向（Ｙ軸方向）に移動させるものである。ここで、割り出し送り方向（Ｙ軸方向）は、切削ブレード２１の回転軸の軸方向であり、切削送り方向（Ｘ軸方向）及び鉛直方向とそれぞれ直交している。Ｙ軸移動手段５０は、Ｙ軸パルスモータ５１と、Ｙ軸ボールねじ５２と、一対のＹ軸ガイドレール５３，５３とを含んでいる。一対のＹ軸ガイドレール５３，５３上には、切削手段２０が搭載される切削ブレード移動基台３が載置され、この切削ブレード移動基台３の下部にＹ軸ボールねじ５２が螺合している。Ｙ軸移動手段５０は、Ｙ軸パルスモータ５１により発生した回転力によりＹ軸ボールねじ５２を回転駆動させることで、切削ブレード移動基台３及び切削手段２０をＹ軸ガイドレール５３，５３に沿って、装置基台２に対してＹ軸方向に移動させる。 The Y-axis moving means 50 is mounted on the apparatus base 2 and moves the cutting blade moving base 3 and the cutting means 20 in the indexing feed direction (Y-axis direction). Here, the index feed direction (Y-axis direction) is the axial direction of the rotation axis of the cutting blade 21, and is orthogonal to the cutting feed direction (X-axis direction) and the vertical direction, respectively. The Y-axis moving means 50 includes a Y-axis pulse motor 51, a Y-axis ball screw 52, and a pair of Y-axis guide rails 53 and 53. A cutting blade moving base 3 on which the cutting means 20 is mounted is placed on the pair of Y-axis guide rails 53, 53, and a Y-axis ball screw 52 is screwed into the lower portion of the cutting blade moving base 3. ing. The Y-axis moving means 50 rotates and drives the Y-axis ball screw 52 by the rotational force generated by the Y-axis pulse motor 51, so that the cutting blade moving base 3 and the cutting means 20 are driven along the Y-axis guide rails 53 and 53. Then, the device base 2 is moved in the Y-axis direction.

Ｚ軸移動手段６０は、切削ブレード移動基台３に搭載されて、支持部４及び切削手段２０を切り出し方向（Ｚ軸方向）に移動させるものである。この切り出し方向（Ｚ軸方向）は、鉛直方向であり、切削送り方向（Ｘ軸方向）及び割り出し送り方向（Ｙ軸方向）にそれぞれ直交する。Ｚ軸移動手段６０は、切削ブレード移動基台３に設けられており、Ｚ軸パルスモータ６１と、Ｚ軸ボールねじ（不図示）と、一対のＺ軸ガイドレール６３，６３とを含んでいる。一対のＺ軸ガイドレール６３，６３には、切削手段２０が搭載される支持部４が連結されており、この支持部４にＺ軸ボールねじが螺合している。Ｚ軸移動手段６０は、Ｚ軸パルスモータ６１により発生した回転力によりＺ軸ボールねじを回転させることで、支持部４及び切削手段２０をＺ軸ガイドレール６３に沿ってガイドしつつ、切削ブレード移動基台３に対してＺ軸方向に移動させる。 The Z-axis moving means 60 is mounted on the cutting blade moving base 3, and moves the support portion 4 and the cutting means 20 in the cutting direction (Z-axis direction). The cutting direction (Z-axis direction) is a vertical direction, and is orthogonal to the cutting feed direction (X-axis direction) and the index feed direction (Y-axis direction), respectively. The Z-axis moving means 60 is provided on the cutting blade moving base 3, and includes a Z-axis pulse motor 61, a Z-axis ball screw (not shown), and a pair of Z-axis guide rails 63, 63. .. A support portion 4 on which the cutting means 20 is mounted is connected to the pair of Z-axis guide rails 63, 63, and a Z-axis ball screw is screwed into the support portion 4. The Z-axis moving means 60 rotates the Z-axis ball screw by the rotational force generated by the Z-axis pulse motor 61, thereby guiding the support portion 4 and the cutting means 20 along the Z-axis guide rail 63, and the cutting blade. It is moved in the Z-axis direction with respect to the moving base 3.

制御部７０は、例えば、ＣＰＵ等で構成された演算処理装置と、ＲＯＭ、ＲＡＭ、ハードディスク等で構成されて各種のデータやプログラムを記憶する記憶部と、を備える。この制御部７０は、オペレータの入力や予め設定されたプログラム等に基づいて、上記した各部の動作を制御する機能を有する。また、制御部７０は、第１撮像手段３０による撮像画像をアライメント用にパターンマッチング処理したり、第１撮像手段３０及び第２撮像手段３５による各撮像画像をカーフチェック用に画像処理して表示部７５に表示させたりする画像処理手段として機能する。 The control unit 70 includes, for example, an arithmetic processing unit composed of a CPU or the like, and a storage unit composed of a ROM, RAM, a hard disk, or the like and storing various data and programs. The control unit 70 has a function of controlling the operation of each unit described above based on an operator's input, a preset program, or the like. Further, the control unit 70 performs pattern matching processing on the images captured by the first imaging means 30 for alignment, and image processing and displaying each image captured by the first imaging means 30 and the second imaging means 35 for calf checking. It functions as an image processing means for displaying on the unit 75.

表示部７５は、例えば、液晶ディスプレイ（ＬＣＤ）等で構成されたモニタであり、制御部７０によって処理された画像を表示する。また、制御部７０には、各種スイッチ、タッチパネル等の入力装置で構成される操作部（不図示）が接続され、オペレータは、操作部を介して、切削装置１の各部に対する指示を入力する。例えば、オペレータは、操作部を操作することにより、第１撮像手段３０及び第２撮像手段３５の少なくとも一方を用いて、ウエーハ１００の撮像画像を生成することができる。 The display unit 75 is a monitor composed of, for example, a liquid crystal display (LCD) or the like, and displays an image processed by the control unit 70. Further, an operation unit (not shown) composed of input devices such as various switches and a touch panel is connected to the control unit 70, and the operator inputs an instruction to each unit of the cutting device 1 via the operation unit. For example, the operator can generate an image captured by the wafer 100 by operating the operation unit using at least one of the first image pickup means 30 and the second image pickup means 35.

上記した構成では、ウエーハ１００を保持したチャックテーブル１０と切削手段２０とを切削送り方向（Ｘ軸方向）、割り出し送り方向（Ｙ軸方向）及び切り出し方向（Ｚ軸方向）にそれぞれ相対的に移動させてウエーハ１００に対する切削加工を行う。次に、本実施形態に係る切削方法について説明する。図３は、ウエーハの切削方法の手順を示すフローチャートである。 In the above configuration, the chuck table 10 holding the wafer 100 and the cutting means 20 are relatively moved in the cutting feed direction (X-axis direction), the indexing feed direction (Y-axis direction), and the cutting direction (Z-axis direction), respectively. Then, the waha 100 is cut. Next, the cutting method according to this embodiment will be described. FIG. 3 is a flowchart showing a procedure of a wafer cutting method.

本実施形態では、ウエーハ（被加工物）１００の切削方法は、図３に示すように、保持部材配設ステップＳ１、保持ステップＳ２、切削ステップＳ３、表面側切削溝撮像ステップＳ４、裏面側切削溝撮像ステップＳ５および確認ステップＳ６を備えて構成されている。これら各ステップの順序は、図３に限るものではなく、例えば、裏面側切削溝撮像ステップＳ５を表面側切削溝撮像ステップＳ４よりも先に実行することも可能である。次に、これらの各ステップについて説明する。 In the present embodiment, as shown in FIG. 3, the cutting method of the wafer (workpiece) 100 is a holding member arrangement step S1, a holding step S2, a cutting step S3, a front side cutting groove imaging step S4, and a back side cutting. It is configured to include a groove imaging step S5 and a confirmation step S6. The order of each of these steps is not limited to FIG. 3, and for example, the back surface side cutting groove imaging step S5 can be executed before the front surface side cutting groove imaging step S4. Next, each of these steps will be described.

[保持部材配設ステップＳ１]
保持部材配設ステップは、図２に示すように、ウエーハ１００の裏面１０４にダイシングテープ１０５を貼着すると共に、このダイシングテープ（保持部材）１０５を介して、ウエーハ１００を環状フレーム１０６に支持する。環状フレーム１０６は、ウエーハ１００よりも大きな開口部を有し、この開口部内にウエーハ１００が配置される。なお、ウエーハ１００は、環状フレーム１０６に支持されることを必ずしも要するものではなく、例えば、ウエーハ１００の裏面１０４にウエーハ１００と略同じ大きさの円板状のダイシングテープ（保持部材）１０５を貼着してもよい。 [Holding member arrangement step S1]
In the holding member disposing step, as shown in FIG. 2, the dicing tape 105 is attached to the back surface 104 of the wafer 100, and the wafer 100 is supported on the annular frame 106 via the dicing tape (holding member) 105. .. The annular frame 106 has an opening larger than that of the wafer 100, and the wafer 100 is arranged in the opening. The wafer 100 does not necessarily have to be supported by the annular frame 106. For example, a disk-shaped dicing tape (holding member) 105 having substantially the same size as the wafer 100 is attached to the back surface 104 of the wafer 100. You may wear it.

[保持ステップＳ２]
図４は、環状フレームにダイシングテープを介して支持されたウエーハをチャックテーブルに保持した状態を示す側面図である。ウエーハ１００は、ダイシングテープ１０５を介して、チャックテーブル１０の上に載置され、保持部１１（図１）によって吸引保持されている。また、環状フレーム１０６は、クランパ１２によって挟持されている。 [Holding step S2]
FIG. 4 is a side view showing a state in which a wafer supported by a dicing tape on an annular frame is held on a chuck table. The wafer 100 is placed on the chuck table 10 via the dicing tape 105, and is sucked and held by the holding portion 11 (FIG. 1). Further, the annular frame 106 is sandwiched by the clamper 12.

[切削ステップＳ３]
図５は、チャックテーブルに保持されたウエーハを切削手段によって切削している状態を示す側面図である。チャックテーブル１０に保持されたウエーハ１００のアライメント調整を行った後、ウエーハ１００に対する切削加工を行う。この場合、ウエーハ１００の分割予定ライン１０２上に、切削手段２０の切削ブレード２１を配置し、ウエーハ１００を保持したチャックテーブル１０と切削手段２０とを切削送り方向（図１中Ｘ軸方向）に相対的に移動させつつ、スピンドル２２と共に切削ブレード２１を回転させた状態で、ウエーハ１００に対して切削ブレード２１の先端がダイシングテープ１０５に至るまで切削ブレード２１を切り込ませる。これにより、ウエーハ１００には、分割予定ライン１０２上に切削溝１０７が形成される。ダイシングテープ１０５は、切削ブレード２１によって切断されないため、ウエーハ１００はダイシングテープ１０５によって保持された状態を保っている。 [Cutting step S3]
FIG. 5 is a side view showing a state in which the wafer held on the chuck table is being cut by the cutting means. After adjusting the alignment of the wafer 100 held on the chuck table 10, cutting is performed on the wafer 100. In this case, the cutting blade 21 of the cutting means 20 is arranged on the scheduled division line 102 of the waha 100, and the chuck table 10 holding the waha 100 and the cutting means 20 are placed in the cutting feed direction (X-axis direction in FIG. 1). While the cutting blade 21 is rotated together with the spindle 22 while being relatively moved, the cutting blade 21 is cut into the weight 100 until the tip of the cutting blade 21 reaches the dicing tape 105. As a result, the wafer 100 is formed with a cutting groove 107 on the scheduled division line 102. Since the dicing tape 105 is not cut by the cutting blade 21, the wafer 100 is kept in a state of being held by the dicing tape 105.

[表面側切削溝撮像ステップＳ４]
図６は、第１撮像手段を用いて、チャックテーブルに保持されたウエーハの切削溝の表面側を撮像する状態を示す側面図である。表面側切削溝撮像ステップＳ４では、第１撮像手段３０は、ウエーハ１００に形成された切削溝１０７上に配置され、該切削溝１０７を撮像する。具体的には、ウエーハ１００の分割予定ライン１０２（切削溝１０７）上に予め設定された座標位置が、第１撮像手段３０の下に位置付くようにチャックテーブル１０を移動し、第１撮像手段３０は、この座標位置でチャックテーブル１０が停止した後に撮像する。これにより、第１撮像手段３０は、ウエーハ１００の表面１０１側から切削溝１０７の表面部１０７Ａの撮像画像を形成し、この撮像画像は、制御部７０が備える記憶部に格納される。この際、ウエーハ１００の管理番号情報、撮像された座標位置情報などが合わせて格納される。本実施形態では、表面側切削溝撮像ステップＳ４は、予め設定された所定数（例えば１０本）の切削溝１０７が形成される度に、形成された切削溝１０７を撮像して実行される。この場合、経験的に切削不良が生じやすい位置（例えば、ウエーハ１００に対する切削ブレード２１の入口や出口）を上記した座標位置として予め設定しておき、この位置の切削溝１０７に対して、表面側切削溝撮像ステップＳ４を実行するのが効果的である。また、ウエーハ１００に対する切削ブレード２１の入口と出口との間の中央領域で撮像してもよい。また、切削溝１０７の一端から他端までを複数回撮像して全体を確認するようにしてもよい。また、切削溝１０７に沿って、第１撮像手段３０とチャックテーブル１０とを相対的に移動させつつ撮像してもよい。また、すべての切削溝１０７に対して、表面側切削溝撮像ステップＳ４を実行してもよい。 [Surface cutting groove imaging step S4]
FIG. 6 is a side view showing a state in which the surface side of the cutting groove of the wafer held on the chuck table is imaged by using the first image pickup means. In the surface-side cutting groove imaging step S4, the first imaging means 30 is arranged on the cutting groove 107 formed in the wafer 100, and images the cutting groove 107. Specifically, the chuck table 10 is moved so that the coordinate position preset on the scheduled division line 102 (cutting groove 107) of the wafer 100 is positioned below the first image pickup means 30, and the first image pickup means 30 takes an image after the chuck table 10 is stopped at this coordinate position. As a result, the first image pickup means 30 forms an image of the surface portion 107A of the cutting groove 107 from the surface 101 side of the wafer 100, and the captured image is stored in the storage unit included in the control unit 70. At this time, the control number information of the wafer 100, the captured coordinate position information, and the like are also stored. In the present embodiment, the surface-side cutting groove imaging step S4 is executed by imaging the formed cutting grooves 107 each time a predetermined number (for example, 10) of cutting grooves 107 is formed. In this case, a position where cutting defects are likely to occur empirically (for example, an inlet or an outlet of the cutting blade 21 with respect to the wafer 100) is set in advance as the above-mentioned coordinate position, and the surface side with respect to the cutting groove 107 at this position. It is effective to execute the cutting groove imaging step S4. Further, the image may be taken in the central region between the inlet and the outlet of the cutting blade 21 with respect to the wafer 100. Further, the entire cutting groove 107 may be imaged a plurality of times from one end to the other end to check the whole. Further, the first imaging means 30 and the chuck table 10 may be relatively moved along the cutting groove 107 for imaging. Further, the surface side cutting groove imaging step S4 may be executed for all the cutting grooves 107.

[裏面側切削溝撮像ステップＳ５]
図７は、第２撮像手段を用いて、チャックテーブルに保持されたウエーハの切削溝の裏面側を撮像する状態を示す側面図である。裏面側切削溝撮像ステップＳ５では、第２撮像手段３５は、表面側切削溝撮像ステップＳ４に続いて実行される。すなわち、表面側切削溝撮像ステップＳ４において、撮像された切削溝１０７に対して裏面側切削溝撮像ステップＳ５を実行する。第２撮像手段３５は、該当する切削溝１０７上に配置され、ウエーハ１００の裏面１０４に焦点を位置づけて撮像する。これにより、第２撮像手段３５は、ウエーハ１００の表面１０１側から切削溝１０７の裏面部１０７Ｂの撮像画像を形成し、この撮像画像は、制御部７０が備える記憶部に格納される。また、ウエーハ１００の裏面１０４に焦点を位置づけた状態で、切削溝１０７に沿って、第２撮像手段３５とチャックテーブル１０とを相対的に移動させつつ撮像してもよい。本実施形態では、第２撮像手段３５は、第１撮像手段３０と同一の座標位置で撮像する。これにより、同一の座標位置における切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂの撮像画像を得ることができる。 [Back side cutting groove imaging step S5]
FIG. 7 is a side view showing a state in which the back surface side of the cutting groove of the wafer held on the chuck table is imaged by using the second imaging means. In the back surface side cutting groove imaging step S5, the second imaging means 35 is executed following the front surface side cutting groove imaging step S4. That is, in the front side cutting groove imaging step S4, the back surface side cutting groove imaging step S5 is executed for the imaged cutting groove 107. The second image pickup means 35 is arranged on the corresponding cutting groove 107, and takes a picture by positioning the focus on the back surface 104 of the wafer 100. As a result, the second image pickup means 35 forms an image captured by the back surface portion 107B of the cutting groove 107 from the front surface 101 side of the wafer 100, and the captured image is stored in the storage unit included in the control unit 70. Further, with the focus positioned on the back surface 104 of the wafer 100, the second imaging means 35 and the chuck table 10 may be relatively moved along the cutting groove 107 for imaging. In the present embodiment, the second image pickup means 35 takes an image at the same coordinate position as the first image pickup means 30. As a result, it is possible to obtain an image of the front surface portion 107A and the back surface portion 107B of the cutting groove 107 at the same coordinate position.

[確認ステップＳ６]
図８は、第１撮像手段が撮像した表面側切削溝撮像画像の一例と第２撮像手段が撮像した裏面側切削溝撮像画像の一例とを並べて配置した図である。図９は、表面側切削溝撮像画像と裏面側切削溝撮像画像とから想定される切削溝の形状の一例を示すウエーハの部分断面図である。確認ステップＳ６では、オペレータは、切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂの撮像画像を確認する。具体的には、図８に示すように、同一の座標位置における表面側切削溝撮像画像８０Ａと裏面側切削溝撮像画像８０Ｂとが組（ペア）となり、例えば、表示部７５（図１）に横並びに表示される。一の切削溝１０７において、該切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂが、座標位置を変えてそれぞれ複数撮像されている場合には、オペレータの操作によって、表面側切削溝撮像画像８０Ａと裏面側切削溝撮像画像８０Ｂとの組が順次、表示部７５（図１）に表示される。 [Confirmation step S6]
FIG. 8 is a diagram in which an example of a front side cutting groove image captured by the first image pickup means and an example of a back surface side cutting groove image captured by the second image pickup means are arranged side by side. FIG. 9 is a partial cross-sectional view of a wafer showing an example of the shape of the cutting groove assumed from the image of the cutting groove on the front side and the image of the cutting groove on the back side. In the confirmation step S6, the operator confirms the captured images of the front surface portion 107A and the back surface portion 107B of the cutting groove 107. Specifically, as shown in FIG. 8, the front side cutting groove image 80A and the back surface side cutting groove image 80B at the same coordinate position form a pair, and for example, on the display unit 75 (FIG. 1). Displayed side by side. In one cutting groove 107, when a plurality of front surface portions 107A and back surface portions 107B of the cutting groove 107 are imaged at different coordinate positions, the front surface side cutting groove captured image 80A and the back surface portion are captured by the operator's operation. The pair with the side cutting groove captured image 80B is sequentially displayed on the display unit 75 (FIG. 1).

この構成では、表面側切削溝撮像画像８０Ａ及び裏面側切削溝撮像画像８０Ｂを通じて、切削溝１０７の表面部１０７Ａだけでなく、裏面部１０７Ｂの切削状態を観察することができる。このため、例えば、撮像画像に基づいて、制御部７０に切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂに発生するチッピングの大きさ（最大値、平均値）を算出させ、表面部１０７Ａまたは裏面部１０７Ｂに許容値以上のチッピングが発生したか否かを容易に検出することができる。ここで、表面部１０７Ａまたは裏面部１０７Ｂの少なくとも一方に、許容値以上のチッピングが発生した場合には、制御部７０は、警報を発してウエーハ１００の切削を一端中断する。オペレータは、上記チッピングが発生した原因への対処（例えば、切削ブレードの交換やドレッシングなど）を行うことにより、不良チップが製造されるおそれを低減することができる。 In this configuration, not only the front surface portion 107A of the cutting groove 107 but also the cutting state of the back surface portion 107B can be observed through the front surface side cutting groove image pickup image 80A and the back surface side cutting groove image pickup image 80B. Therefore, for example, based on the captured image, the control unit 70 is made to calculate the size (maximum value, average value) of chipping generated in the front surface portion 107A and the back surface portion 107B of the cutting groove 107, and the front surface portion 107A or the back surface portion 107A or the back surface portion. It is possible to easily detect whether or not chipping of the allowable value or more has occurred in 107B. Here, when chipping of the allowable value or more occurs on at least one of the front surface portion 107A and the back surface portion 107B, the control unit 70 issues an alarm and interrupts the cutting of the wafer 100 at one end. The operator can reduce the risk of producing defective chips by taking measures against the cause of the chipping (for example, replacement of cutting blades, dressing, etc.).

また、この構成では、同一の座標位置における表面側切削溝撮像画像８０Ａと裏面側切削溝撮像画像８０Ｂとを横並びに配置するため、制御部７０は、切削溝１０７における表面部１０７Ａの中心線１０８Ａと裏面部１０７Ｂの中心線１０８Ｂとの位置ずれの有無を容易に検出することができる。ここで、図８に示すように、切削溝１０７における表面部１０７Ａの中心線１０８Ａと裏面部１０７Ｂの中心線１０８Ｂとが距離Ｌの位置ずれを生じている場合、図９に示すように、いわゆる斜め切れの切削溝１０７が形成されていると想定される。この際の距離Ｌが許容値以上であれば、制御部７０は、警報を発してウエーハ１００の切削を一端中断する。オペレータは、次の分割予定ライン１０２の切削から、位置ずれを打ち消す補正（例えば、チャックテーブル１０に対する切削ブレード２１の切削送り速度に調整など）をすることにより、次の分割予定ライン１０２から不良チップが製造されるおそれを低減することができる。 Further, in this configuration, since the front side cutting groove image 80A and the back surface side cutting groove image 80B at the same coordinate position are arranged side by side, the control unit 70 is the center line 108A of the surface portion 107A in the cutting groove 107. It is possible to easily detect the presence or absence of a positional deviation between the back surface portion 107B and the center line 108B. Here, as shown in FIG. 8, when the center line 108A of the front surface portion 107A and the center line 108B of the back surface portion 107B in the cutting groove 107 are displaced by a distance L, so-called as shown in FIG. It is assumed that a diagonally cut cutting groove 107 is formed. If the distance L at this time is equal to or greater than the allowable value, the control unit 70 issues an alarm and temporarily interrupts the cutting of the wafer 100. The operator corrects the misalignment from the cutting of the next scheduled split line 102 (for example, adjusts to the cutting feed rate of the cutting blade 21 with respect to the chuck table 10), so that the defective tip is removed from the next scheduled split line 102. Can be reduced.

上記のような斜め切れは、ウエーハ１００の材質や切り込み深さ、加工送り速度等に応じて発生状況が変わる。更に、斜め切れは、ウエーハ１００に対して、切削ブレード２１が進入した側、出た側、その間においてそれぞれ発生状況が変わる傾向にある。このため、例えば、バー状に切り出したシリコン片やカーボン片等の確認用部材をハーフカットした後、この確認用部材を横に倒して、顕微鏡などの撮像手段で溝形状を確認する従来の構成では、実際のウエーハ１００に対して斜め切れが発生するか否かを判断できなかった。これに対して、本実施形態では、同一の座標位置における表面側切削溝撮像画像８０Ａと裏面側切削溝撮像画像８０Ｂとから、斜め切れの有無を容易に検出することができる。 The occurrence of diagonal cutting as described above varies depending on the material of the wafer 100, the cutting depth, the processing feed rate, and the like. Further, the oblique cutting tends to occur in different situations with respect to the wafer 100 on the side where the cutting blade 21 has entered, the side where the cutting blade 21 has exited, and between them. For this reason, for example, after half-cutting a confirmation member such as a bar-shaped silicon piece or carbon piece, the confirmation member is tilted sideways and the groove shape is confirmed by an image pickup means such as a microscope. Then, it was not possible to determine whether or not an oblique cut occurs with respect to the actual wafer 100. On the other hand, in the present embodiment, the presence or absence of diagonal cutting can be easily detected from the front surface side cutting groove image pickup image 80A and the back surface side cutting groove image pickup image 80B at the same coordinate position.

また、確認ステップＳ６では、斜め切れの他に、いわゆる先細りについても検出することができる。図１０は、第１撮像手段が撮像した表面側切削溝撮像画像の他の一例と第２撮像手段が撮像した裏面側切削溝撮像画像の他の一例とを並べて配置した図である。図１１は、表面側切削溝撮像画像と裏面側切削溝撮像画像とから想定される切削溝の形状の一例を示すウエーハの部分断面図である。 Further, in the confirmation step S6, in addition to the diagonal cut, so-called tapering can be detected. FIG. 10 is a diagram in which another example of the front side cutting groove image captured by the first image pickup means and another example of the back surface side cutting groove image taken by the second image pickup means are arranged side by side. FIG. 11 is a partial cross-sectional view of a wafer showing an example of the shape of the cutting groove assumed from the image of the cutting groove on the front surface side and the image of the cutting groove on the back surface side.

この構成では、制御部７０は、図１０に示すように、切削溝１０７における表面部１０７Ａの幅ＷＡと裏面部１０７Ｂの幅ＷＢとの差を算出する。切削溝１０７における表面部１０７Ａの幅ＷＡと裏面部１０７Ｂの幅ＷＢとの差が発生している場合、図１１に示すように、いわゆる先細りの切削溝１０７が形成されていると想定される。この際の幅ＷＡと幅ＷＢとの差が許容値以上であれば、制御部７０は、警報を発してウエーハ１００の切削を一端中断する。オペレータは、先細りの原因（例えば、切削ブレード２１の偏摩耗など）を追求し、この原因への対処（例えば、切削ブレードの交換やドレッシングなど）を行うことにより、不良チップが製造されるおそれを低減することができる。 In this configuration, as shown in FIG. 10, the control unit 70 calculates the difference between the width WA of the front surface portion 107A and the width WB of the back surface portion 107B in the cutting groove 107. When there is a difference between the width WA of the front surface portion 107A and the width WB of the back surface portion 107B in the cutting groove 107, it is assumed that a so-called tapered cutting groove 107 is formed as shown in FIG. If the difference between the width WA and the width WB at this time is equal to or greater than the allowable value, the control unit 70 issues an alarm and temporarily interrupts the cutting of the wafer 100. The operator may pursue the cause of the taper (for example, uneven wear of the cutting blade 21) and deal with this cause (for example, replacement of the cutting blade or dressing) to manufacture a defective tip. Can be reduced.

次に、別の実施形態について説明する。上記した実施形態では、切削装置１は、顕微鏡等からなる第１撮像手段３０と、赤外線カメラからなる第２撮像手段３５とを備える構成としたが、これに限るものではなく、例えば、第１撮像手段３０を赤外線カメラからなる第２撮像手段３５で兼用してもよい。すなわち、赤外線カメラからなる第２撮像手段３５を用いて、切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂをそれぞれ撮像する。 Next, another embodiment will be described. In the above-described embodiment, the cutting device 1 is configured to include a first image pickup means 30 made of a microscope or the like and a second image pickup means 35 made of an infrared camera, but the present invention is not limited to this, and for example, the first image pickup means is provided. The image pickup means 30 may also be used as a second image pickup means 35 composed of an infrared camera. That is, the front surface portion 107A and the back surface portion 107B of the cutting groove 107 are imaged by using the second image pickup means 35 composed of an infrared camera, respectively.

この場合、第２撮像手段３５の焦点をウエーハ１００の表面１０１に位置づけて切削溝１０７の表面部１０７Ａを撮像し、次に、第２撮像手段３５の焦点をウエーハ１００の裏面１０４に位置づけて切削溝１０７の裏面部１０７Ｂを撮像する。この構成では、第２撮像手段３５の焦点を調整することで、切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂをそれぞれ撮像できるため、撮像する際の作業工程、すなわち表面側切削溝撮像ステップＳ４及び裏面側切削溝撮像ステップＳ５を簡素化することができる。 In this case, the focus of the second imaging means 35 is positioned on the front surface 101 of the wafer 100 to image the surface portion 107A of the cutting groove 107, and then the focus of the second imaging means 35 is positioned on the back surface 104 of the wafer 100 for cutting. The back surface portion 107B of the groove 107 is imaged. In this configuration, by adjusting the focus of the second image pickup means 35, the front surface portion 107A and the back surface portion 107B of the cutting groove 107 can be imaged, respectively. The back surface side cutting groove imaging step S5 can be simplified.

また、ウエーハ１００の厚みが所定値（例えば８０μｍ）以下の場合には、例えば、ウエーハ１００の表面１０１と裏面１０４との中間位置に第２撮像手段３５の焦点を位置づけて、切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂを一度に撮像することができ、同一の撮像画像内に表面部１０７Ａ及び裏面部１０７Ｂを表すことができる。 When the thickness of the wafer 100 is a predetermined value (for example, 80 μm) or less, for example, the focus of the second imaging means 35 is positioned at an intermediate position between the front surface 101 and the back surface 104 of the wafer 100, and the surface of the cutting groove 107 is formed. The front surface portion 107A and the back surface portion 107B can be imaged at one time, and the front surface portion 107A and the back surface portion 107B can be represented in the same captured image.

以上、本実施形態に係る切削方法は、分割予定ライン１０２を有したウエーハ１００を切削ブレード２１で切削する切削方法であって、ウエーハ１００の裏面１０４にダイシングテープ１０５を配設する保持部材配設ステップＳ１と、ダイシングテープ１０５を介してウエーハ１００をチャックテーブル１０で保持する保持ステップＳ２と、チャックテーブル１０で保持されたウエーハ１００に対して切削ブレード２１の先端がダイシングテープ１０５に至るまで切削ブレード２１を切り込ませ分割予定ライン１０２に沿って切削ブレード２１でウエーハ１００を切削してダイシングテープ１０５に至る切削溝１０７を形成する切削ステップＳ３と、切削ステップＳ３で形成された切削溝１０７をウエーハ１００の表面１０１側から第１撮像手段３０で撮像してウエーハ１００における切削溝１０７の表面部１０７Ａの撮像画像を形成する表面側切削溝撮像ステップＳ４と、切削溝１０７をウエーハ１００の表面１０１側から第２撮像手段３５で撮像して、切削溝１０７の裏面部１０７Ｂの撮像画像を形成する裏面側切削溝撮像ステップＳ５と、切削溝１０７の表面部１０７Ａと裏面部１０７Ｂの撮像画像を確認する確認ステップＳ６とを備えている。この構成によれば、切削溝１０７の表面部１０７Ａと裏面部１０７Ｂの撮像画像を通じて、切削溝１０７の表面部１０７Ａだけでなく、裏面部１０７Ｂの切削状態を観察することができる。このため、例えば、切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂに、許容値以上のチッピングや、切削溝１０７の斜め切れまたは先細りが発生したか否かを容易に検出することができることにより、不良チップが製造されるおそれを低減することができる。 As described above, the cutting method according to the present embodiment is a cutting method in which the wafer 100 having the planned division line 102 is cut by the cutting blade 21, and the holding member arrangement for disposing the dicing tape 105 on the back surface 104 of the wafer 100. Step S1, holding step S2 in which the wafer 100 is held by the chuck table 10 via the dicing tape 105, and the cutting blade until the tip of the cutting blade 21 reaches the dicing tape 105 with respect to the wafer 100 held by the chuck table 10. The wafer 100 is cut along the scheduled division line 102 by cutting 21 to form a cutting groove 107 leading to the dicing tape 105, and the cutting groove 107 formed in the cutting step S3 is formed by the wafer. The surface side cutting groove imaging step S4 for forming an image captured by the first imaging means 30 from the surface 101 side of the 100 to form an image of the surface portion 107A of the cutting groove 107 in the wafer 100, and the cutting groove 107 on the surface 101 side of the wafer 100. The back side cutting groove imaging step S5 that forms an image captured by the back surface portion 107B of the cutting groove 107, and the captured images of the front surface portion 107A and the back surface portion 107B of the cutting groove 107 are confirmed. The confirmation step S6 is provided. According to this configuration, not only the front surface portion 107A of the cutting groove 107 but also the cutting state of the back surface portion 107B can be observed through the captured images of the front surface portion 107A and the back surface portion 107B of the cutting groove 107. Therefore, for example, it is possible to easily detect whether or not the cutting groove 107 has chipping above an allowable value, and whether or not the cutting groove 107 is diagonally cut or tapered, resulting in a defect. The risk of chips being manufactured can be reduced.

なお、上記した本実施形態に係る切削方法によれば、以下の切削装置が得られる。
（付記１）
切削予定ラインを表面に有する被加工物を、該被加工物の裏面に配設された保持部材を介して保持する保持テーブルと、
該保持テーブルに保持された該被加工物を切削する切削ブレードを有し、該切削予定ラインに沿って該被加工物を該切削ブレードで被加工物を切削して該保持部材に至る切削溝を形成する切削手段と、
該切削溝を該被加工物の該表面側から撮像して該切削溝における表面部の撮像画像を形成する第１撮像部と、
該切削溝を該被加工物の該表面側から撮像して該切削溝における裏面部の撮像画像を形成する第２撮像部と、
該切削溝における該表面部と該裏面部との撮像画像に基づいて、該被加工物の切削不良箇所を検出する制御部とを備える切削装置。 According to the cutting method according to the present embodiment described above, the following cutting device can be obtained.
(Appendix 1)
A holding table that holds a workpiece having a planned cutting line on its surface via a holding member disposed on the back surface of the workpiece.
It has a cutting blade that cuts the workpiece held on the holding table, and cuts the workpiece with the cutting blade along the scheduled cutting line to reach the holding member. With the cutting means to form
A first imaging unit that images the cutting groove from the surface side of the workpiece to form an image of the surface portion of the cutting groove.
A second image pickup unit that images the cutting groove from the front surface side of the workpiece to form an image of the back surface portion of the cutting groove.
A cutting apparatus including a control unit for detecting a cutting defect portion of the workpiece based on an image captured by the front surface portion and the back surface portion of the cutting groove.

上記切削装置は、本実施形態に係る切削方法と同様に、切削溝１０７の表面部１０７Ａと裏面部１０７Ｂの撮像画像を通じて、切削溝１０７の表面部１０７Ａだけでなく、裏面部１０７Ｂの切削状態を観察することができる。このため、例えば、切削溝１０７の表面部１０７Ａ及び裏面部１０７Ｂに、許容値以上のチッピングや、切削溝１０７の斜め切れまたは先細りが発生したか否かなどの切削不良箇所を容易に検出することができ、不良チップが製造されるおそれを低減することができる。 Similar to the cutting method according to the present embodiment, the cutting apparatus captures not only the front surface portion 107A of the cutting groove 107 but also the back surface portion 107B through the captured images of the front surface portion 107A and the back surface portion 107B of the cutting groove 107. Can be observed. Therefore, for example, on the front surface portion 107A and the back surface portion 107B of the cutting groove 107, it is possible to easily detect a cutting defect portion such as whether or not chipping exceeding an allowable value, diagonal cutting or tapering of the cutting groove 107 has occurred. This makes it possible to reduce the risk of manufacturing defective chips.

なお、本発明は、上記実施形態に限定されるものではない。すなわち、本発明の骨子を逸脱しない範囲で種々変形して実施することができる。 The present invention is not limited to the above embodiment. That is, it can be variously modified and carried out within a range that does not deviate from the gist of the present invention.

１ 切削装置
１０ チャックテーブル（保持テーブル）
２０ 切削手段
２１ 切削ブレード
３０ 第１撮像手段（撮像カメラ）
３５ 第２撮像手段（赤外線カメラ）
７０ 制御部
７５ 表示部
８０Ａ 表面側切削溝撮像画像
８０Ｂ 裏面側切削溝撮像画像
１００ ウエーハ（被加工物）
１０１ 表面
１０２ 分割予定ライン（切削予定ライン）
１０４ 裏面
１０５ ダイシングテープ（保持部材）
１０７ 切削溝
１０７Ａ 表面部
１０７Ｂ 裏面部 1 Cutting device 10 Chuck table (holding table)
20 Cutting means 21 Cutting blade 30 First imaging means (imaging camera)
35 Second imaging means (infrared camera)
70 Control unit 75 Display unit 80A Front side cutting groove image 80B Back side cutting groove image 100 Wafer (workpiece)
101 Surface 102 Scheduled division line (Scheduled cutting line)
104 Back side 105 Dicing tape (holding member)
107 Cutting groove 107A Front surface 107B Back surface

Claims (4)

切削予定ラインを有した被加工物を切削ブレードで切削する切削方法であって、
被加工物の裏面に保持部材を配設する保持部材配設ステップと、
該保持部材を介して被加工物を保持テーブルで保持する保持ステップと、
該保持テーブルで保持された被加工物に対して該切削ブレードの先端が該保持部材に至るまで該切削ブレードを切り込ませ該切削予定ラインに沿って該切削ブレードで被加工物を切削して該保持部材に至る切削溝を形成する切削ステップと、
該切削ステップで形成された該切削溝を被加工物の表面側から撮像カメラで撮像して被加工物の該表面における該切削溝の撮像画像を形成する表面側切削溝撮像ステップと、
該切削溝を被加工物の該表面側から赤外線カメラで撮像して被加工物の該裏面における該切削溝の撮像画像を形成する裏面側切削溝撮像ステップと、
該表面と該裏面における該切削溝を確認する確認ステップと、を備え、
該表面側切削溝撮像ステップと該裏面側切削溝撮像ステップとでは、同一の座標位置における切削溝の表面及び裏面の撮像画像を得て、
該確認ステップでは、該切削溝の斜め切り又は先細りを検出することを特徴とする切削方法。 It is a cutting method that cuts a workpiece with a planned cutting line with a cutting blade.
A holding member disposing step for disposing a holding member on the back surface of the workpiece,
A holding step of holding the workpiece on the holding table via the holding member, and
The cutting blade is cut into the workpiece held by the holding table until the tip of the cutting blade reaches the holding member, and the workpiece is cut by the cutting blade along the scheduled cutting line. A cutting step that forms a cutting groove leading to the holding member,
A surface-side cutting groove imaging step in which the cutting groove formed in the cutting step is imaged from the surface side of the workpiece with an image pickup camera to form an image of the cutting groove on the surface of the workpiece.
And the back-side cutting groove imaging step of forming the captured image該切Kezumizo in back surface of imaging the workpiece with an infrared camera the cutting groove from the surface side of the workpiece,
A confirmation step for confirming the cutting groove on the front surface and the back surface thereof is provided.
In the front side cutting groove imaging step and the back surface side cutting groove imaging step, captured images of the front surface and the back surface of the cutting groove at the same coordinate position are obtained.
The confirmation step is a cutting method characterized by detecting diagonal cutting or tapering of the cutting groove. 該確認ステップでは、同一の座標位置における該表面側の切削溝の撮像画像と、該裏面側の該切削溝の撮像画像とを表示部に並べて表示する、請求項１に記載の切削方法。 The cutting method according to claim 1, wherein in the confirmation step, the captured image of the cutting groove on the front surface side and the captured image of the cutting groove on the back surface side at the same coordinate position are displayed side by side on the display unit. 該撮像カメラは、該赤外線カメラで兼用される、請求項２に記載の切削方法。 The cutting method according to claim 2 , wherein the image pickup camera is also used as the infrared camera. 該確認ステップでは、該赤外線カメラの焦点を被加工物の該表面に位置づけて該表面における該切削溝を撮像し、該赤外線カメラの該焦点を被加工物の該裏面に位置づけて該裏面における該切削溝を撮像する、請求項３に記載の切削方法。 In the confirmation step, the focus of the infrared camera is positioned on the front surface of the workpiece to image the cutting groove on the surface, and the focus of the infrared camera is positioned on the back surface of the workpiece and the back surface thereof. The cutting method according to claim 3 , wherein the cutting groove is imaged.
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JP6812079B2 (en) * 2017-03-13 2021-01-13 株式会社ディスコ Processing method of work piece
JP7184620B2 (en) * 2018-12-11 2022-12-06 株式会社ディスコ cutting equipment
JP7282461B2 (en) * 2019-04-16 2023-05-29 株式会社ディスコ Inspection equipment and processing equipment
JP7343293B2 (en) * 2019-04-18 2023-09-12 株式会社ディスコ Division processing device
JP7325897B2 (en) * 2019-04-18 2023-08-15 株式会社ディスコ Machining device and machining method of workpiece
JP7366637B2 (en) * 2019-08-16 2023-10-23 株式会社ディスコ Workpiece confirmation method and processing method
JP7382762B2 (en) * 2019-08-27 2023-11-17 株式会社ディスコ How to judge the quality of processing results of laser processing equipment
JP7430449B2 (en) * 2020-02-04 2024-02-13 株式会社ディスコ processing equipment
JP7430451B2 (en) * 2020-04-02 2024-02-13 株式会社ディスコ cutting equipment
JP2022010788A (en) * 2020-06-29 2022-01-17 株式会社ディスコ Processing apparatus
JP2022010789A (en) 2020-06-29 2022-01-17 株式会社ディスコ Processing apparatus
CN111761747B (en) * 2020-07-09 2022-07-29 深圳市佰创力科技有限公司 Perforating device is used in processing of IC semiconductor chip
JP2022038528A (en) * 2020-08-27 2022-03-10 株式会社ディスコ Processing apparatus
JP2022124134A (en) * 2021-02-15 2022-08-25 株式会社ディスコ Processing method for workpiece
CN114864750A (en) * 2022-05-17 2022-08-05 通威太阳能（合肥）有限公司 Battery piece slicing method, battery piece slicing system, storage medium and computer
CN114755814B (en) * 2022-06-13 2022-09-13 沈阳和研科技有限公司 Novel microscope structure capable of being used for back cutting of scribing machine and scribing machine

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3868056B2 (en) * 1997-05-07 2007-01-17 株式会社ディスコ Wafer chipping detection method
JPH10312979A (en) * 1997-05-12 1998-11-24 Disco Abrasive Syst Ltd Method for detecting cutting state of wafer
JP3813692B2 (en) * 1997-05-28 2006-08-23 株式会社ディスコ Method for detecting special pattern inside semiconductor wafer in dicing machine
JP2003203883A (en) * 2002-01-07 2003-07-18 Tokyo Seimitsu Co Ltd Microscope and observing method
JP4381755B2 (en) * 2003-09-09 2009-12-09 株式会社ディスコ Cutting equipment
JP2005129607A (en) * 2003-10-22 2005-05-19 Disco Abrasive Syst Ltd Method of dividing wafer
US7494900B2 (en) * 2006-05-25 2009-02-24 Electro Scientific Industries, Inc. Back side wafer dicing
JP2008112884A (en) * 2006-10-31 2008-05-15 Disco Abrasive Syst Ltd Processing method of wafer
JP4102842B1 (en) * 2006-12-04 2008-06-18 東京エレクトロン株式会社 Defect detection device, defect detection method, information processing device, information processing method, and program thereof
JP5134412B2 (en) 2008-03-28 2013-01-30 株式会社ディスコ Chipping detection method
JP2011033449A (en) * 2009-07-31 2011-02-17 Sumco Corp Method and apparatus for defect inspection of wafer
JP5508108B2 (en) * 2010-04-15 2014-05-28 株式会社ディスコ Manufacturing method of semiconductor device
JP5743958B2 (en) * 2012-05-30 2015-07-01 キヤノン株式会社 Measuring method, exposure method and apparatus
JP5995616B2 (en) * 2012-09-05 2016-09-21 株式会社ディスコ Wafer processing method
US8952497B2 (en) * 2012-09-14 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe lines in wafers
JP6184855B2 (en) * 2013-12-16 2017-08-23 株式会社ディスコ Package substrate division method
JP6465722B2 (en) * 2015-04-06 2019-02-06 株式会社ディスコ Processing equipment
US20180019139A1 (en) * 2016-07-12 2018-01-18 Ayar Labs, Inc. Wafer-Level Etching Methods for Planar Photonics Circuits and Devices

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