MY119984A - Lithography process. - Google Patents

Lithography process.

Info

Publication number
MY119984A
MY119984A MYPI93000202A MYPI9300202A MY119984A MY 119984 A MY119984 A MY 119984A MY PI93000202 A MYPI93000202 A MY PI93000202A MY PI9300202 A MYPI9300202 A MY PI9300202A MY 119984 A MY119984 A MY 119984A
Authority
MY
Malaysia
Prior art keywords
pattern
ch2ch2o
surfactant
resist
molecular weight
Prior art date
Application number
MYPI93000202A
Other languages
English (en)
Inventor
Tadahiro Ohmi
Hisayuki Shimada
Shigeki Shimomura
Akiyoshi Suzuki
Mamoru Miyawaki
Miyoko Noguchi
Original Assignee
Tadahiro Ohmi
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi, Canon Kk filed Critical Tadahiro Ohmi
Publication of MY119984A publication Critical patent/MY119984A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
MYPI93000202A 1992-02-10 1993-02-09 Lithography process. MY119984A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5752692 1992-02-10
JP4233083A JPH05303209A (ja) 1992-02-10 1992-08-07 リソグラフィ工程
JP4233081A JPH05308048A (ja) 1992-02-10 1992-08-07 リソグラフィ工程

Publications (1)

Publication Number Publication Date
MY119984A true MY119984A (en) 2005-08-30

Family

ID=13058195

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI93000202A MY119984A (en) 1992-02-10 1993-02-09 Lithography process.

Country Status (4)

Country Link
JP (2) JPH05308048A (ja)
KR (1) KR0123931B1 (ja)
MY (1) MY119984A (ja)
TW (1) TW233378B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4564186B2 (ja) * 2001-02-16 2010-10-20 株式会社東芝 パターン形成方法
KR100680401B1 (ko) * 2004-07-02 2007-02-08 주식회사 하이닉스반도체 이머젼 리소그래피용 액체 조성물 및 이를 이용한리소그래피 방법
JP2007150102A (ja) * 2005-11-29 2007-06-14 Fujitsu Ltd 露光装置及び光学素子の洗浄方法
WO2009150913A1 (ja) * 2008-06-12 2009-12-17 株式会社ニコン 照明装置、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
JPH05303209A (ja) 1993-11-16
TW233378B (ja) 1994-11-01
JPH05308048A (ja) 1993-11-19
KR0123931B1 (ko) 1997-11-20
KR930018679A (ko) 1993-09-22

Similar Documents

Publication Publication Date Title
TW353086B (en) Method for multistep coating of a surface
DE59504349D1 (de) Verfahren zur herstellung von wasch- oder reinigungsmitteltabletten
AU3478793A (en) Improved mask for photolithography
GR3020451T3 (en) Retroviral protease inhibitors
SG17088G (en) Stripping compositions and methods of stripping resists
BR0102599A (pt) Processo fotolitográfico para a formação de uma agulha de uma peça
DE69321627D1 (de) Lithographisches Verfahren
ES2093680T3 (es) Procedimiento de preparacion de 1,3-dioxolanos halogenados y productos obtenidos por este procedimiento.
MY119984A (en) Lithography process.
IL84388A0 (en) Stripping compositions and methods of stripping resists from substrates
EP0459655A3 (en) Photoresist process employing an i-line peak light source
EP0535229A4 (en) Mask for shifting phase
JPS5273853A (en) 9,10-dihydro-9,10-methanoanthracene-n-oxide derivatives and process fo r preparing them
NO911548D0 (no) Framgangsmaate for fjerning av fosfor og suspenderte komponenter fra avloepsvann.
GB2296577B (en) Light exposure mask for semiconductor devices
EP0338889A3 (en) Process for forming dicing lines on wafer
GB9515230D0 (en) Method of manufacturing a photo mask for manufacturing a semiconductor device
CO4560470A1 (es) Proceso para formar articulos directamente de una polimeri- zacion por fundicion
AU605777B2 (en) Substituted 2-aminotetralins
DK0431305T3 (da) Fremgangsmåde til fremstilling af molluskicide 2,4,5-tribrompyrrol-3-carbonitriler
JPS51130681A (en) A process for purification of malodorous gas and its apparatus
TH14929EX (th) กรรมวิธีการพิมพ์หิน
IT1255545B (it) Procedimento per la preparazione di diltiazem
EP0463445A3 (en) Process for making microstructures having a high aspect ratio by erosion lithography
TH14802EX (th) น้ำยาสร้างภาพลิโธกราฟิคและกรรมวิธีลิโธกราฟิค