MXPA05003154A - Molecular light emitting device. - Google Patents

Molecular light emitting device.

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Publication number
MXPA05003154A
MXPA05003154A MXPA05003154A MXPA05003154A MXPA05003154A MX PA05003154 A MXPA05003154 A MX PA05003154A MX PA05003154 A MXPA05003154 A MX PA05003154A MX PA05003154 A MXPA05003154 A MX PA05003154A MX PA05003154 A MXPA05003154 A MX PA05003154A
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MX
Mexico
Prior art keywords
molecule
channel
light
drain
source
Prior art date
Application number
MXPA05003154A
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Spanish (es)
Inventor
Chen-Hsiang Tsang James
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Ibm
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Application filed by Ibm filed Critical Ibm
Publication of MXPA05003154A publication Critical patent/MXPA05003154A/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure

Abstract

A light emitting device comprises a gate electrode (101), a channel (103) comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode (101), a source (104) coupled to a first end of the channel injecting electrons into the channel, and a drain (105) coupled to a second end of the channel injecting holes into the channel.

Description

SE, SI, SK, TR), OAPI patent (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Pubüshed: - without intemational search repon and to be republished upon receipt of that repo LIGHT EMITTER MOLECULAR DEVICE DESCRIPTION Background and field of the invention The present invention relates to light emitting devices (LEDs) and more particularly to a carbon nanotube LED. The economy has led to the integration of photon structures in wafers for some time. However, to take full advantage of the unique opportunities presented by the latest advances in the construction of photonic structures of forbidden energy levels, nano-scale devices need to be capable of optical emission when excited by electric currents as well as by light. Conventional silicon-based semiconductor photonic structures need either the integration of direct materials of forbidden energy levels or microporous silicon to provide a source of photons, both associated with important technical challenges and still have to be observed as practical. Therefore, there is a need for a molecular scale device capable of optical emission 1 electrically induced, where the device can be compatible with silicon technology.
BRIEF DESCRIPTION OF THE INVENTION In accordance with one embodiment of the present invention, a light emitting device comprising a gate electrode, a channel comprising a molecule for light emission electrically stimulated, wherein the molecule is placed within an effective range of the gate electrode , a source coupled to a first end of the channel that injects electrons into the channel and a drain coupled to a second end of the channel that injects holes in the channel. The molecule is one of a carbon nanotube and a boron-nitride nanotube. The gate electrode is formed inside a substrate. The gate electrode is a substrate. The molecule is substantially ambipolar. The molecule is a carbon rectification nanotube. The molecule is one of a single wall nanotube and a multiple wall nanotube. A charge density is around between 10 ° empires / cm2 and 109 Ampere / cm2. A drain voltage is approximately twice a gate voltage and 2 the source is close to the ground potential. The molecule is substantially uncontaminated. The first end of the molecule is contaminated. The channel comprises a molecule - arranged on the substrate for electrically stimulated optical emission. The channel comprises at least two molecules arranged on the substrate for electrically stimulated optical emission. In accordance with one embodiment of the present invention, there is provided a method for generating light that "comprises providing a field effect transistor comprising a source, a drain, a gate electrode and a channel comprising a molecule for stimulated light emission. electrically, the molecule has a diameter adapted to generate light of a desired wavelength.The method further comprises polarizing the gate electrode with a gate voltage, directly polarizing the channel by applying a voltage between the source and the drain, and recombining an electron and a hole, where "recombination generates light of the desired wavelength. The channel is one of a carbon nanotube and a boron-nitride nanotube. The gate voltage and the voltage applied to the drain produce a charge density through the channel adapted to cause optical emission from the channel. 3 The light of the desired wavelength is in a portion of a spectrum that includes infrared light and visible light. The method comprises impurifying a first portion of the channel with n dopants, wherein the first portion of the channel is close to the source. The channel comprises a molecule arranged on the substrate for electrically stimulated optical emission. The channel comprises at least two molecules arranged on the substrate for electrically stimulated optical emission. A light emitting device comprising a channel comprising a molecule for emission of electrically stimulated light, wherein the molecule comprises a n-type portion and a p-type portion that form a p-n junction within the molecule; a source coupled to the p-type portion of the molecule that injects electrons into the molecule, and a drain coupled to the n-type portion of the molecule that injects holes in the molecule. The molecule is one of a carbon nanotube and a boron-nitride nanotube. · The molecule is polarized directly. The molecule is intrinsically type p and one end of the molecule is chemically contaminated to form the n-type portion.
In accordance with one embodiment of the present invention, a method for generating light comprises providing a two-terminal device comprising a source, a drain and a channel comprising a molecule for electrically stimulated light emission, wherein the molecule includes a n-type portion and a p-type portion that forms a pn-type junction within the molecule, wherein the molecule has a diameter adapted to generate light of a desired wavelength. The method also includes direct polarization of the molecule by applying a voltage between the source and the drain, where the source is coupled to the p-type portion and the drain is coupled to the n-type portion and recombine an electron and a hole, where recombination generates light of the desired wavelength. The molecule is one of a carbon nanotube and a boron-nitride nanotube.
BRIEF DESCRIPTION OF THE DRAWINGS Preferred embodiments of the present invention will be described below in more detail, referring to the accompanying drawings. Fig. 1A is a diagram of an optical emission molecular device according to one embodiment of the present invention. 5 Fig. IB is a diagram of an optical emission molecular device in accordance with one embodiment of the present invention. Fig. 2 is a diagram of an optical emission molecular device according to one embodiment of the present invention. Fig. 3 is a diagram of a nanotube in accordance with one embodiment of the present invention. Fig. 4 is a graph of drainage current versus drain voltage in accordance with one embodiment of the present invention. Fig. 5 is a flowchart of a method according to an embodiment of the present invention.
Detailed description of the preferred modalities In accordance with one embodiment of the present invention, a single-molecule field effect device having a directly polarized and induced p-n junction is capable of electrically induced optical emission. The emission can be from a single 1-d molecule, for example, from a carbon nanotube or from a boron-nitride nanotube, offering high scaling for electrically pumped optical emission devices. 6 With reference to Fig.! ¾., A device comprising a gate electrode 101, for example, a silicon substrate, is shown. The gate electrode may be formed within the substrate or the gate electrode may be the substrate as shown in Fig. IB. The device further comprises a gate oxide 102, such as a silicon oxide layer or an aluminum oxide layer, on which a carbon nanotube 103 can be deposited. The carbon nanotube 103 is within an effective range of the gate electrode 101, such that the gate electrode can electrically stimulate the carbon nanotube 103 to produce an optical emission, for example, 100 nm. The carbon nanotube 103 can be, for example, a single-walled carbon nanotube having a chirality imparting a semiconductor characteristic. More than carbon nanotube can also be implemented. A source 104 and a drain 105 are formed at opposite ends of the carbon nanotube 103. A cap 106 such as a silicon oxide can be deposited on the device. A carbon nanotube molecule can be single wall or multiple wall. A multi-wall nanotube has a series of concentric nanotube cylinders. Both single-walled nanotubes and 7 Multiple wall can be metallic or semiconductor depending on the chirality (ie, conformation geometry). Metal nanotubes can carry high current densities with constant resistance. Semiconductor nanotubes can be electrically switched on and off at intervals as field effect transistors (FETs). The two types can be covalently linked (sharing electrons). Optical emission can be achieved from a molecular system based on carbon nanotubes through a polarized p-n junction directly into which holes and electrons are injected through the space charge region. The recombination of excess electrons and holes in the space charge region can lead to the emission of photons, as in semiconductor light-emitting diodes of conventional direct forbidden energy levels. In accordance with one embodiment of the present invention, however, the p and n regions are at opposite ends of a single molecule, as contrasted with previous work involving polymeric or organic films and crystals. With reference to Fig. 2, regions p and n can be created in a single molecule by selecting the contaminant. For example, a single intrinsically p-type carbon nanotube molecule 103 can be placed between the source 104 and the drain electrodes 105. One end of the molecule is masked 2Q1 using lithographic techniques, including for example, electron beam lithography. The exposed end can then be contaminated. The exposed end of the intrinsically p-type molecule is contaminated to create a n-type region in the exposed area, e. g., contaminating by potassium. Thus, a p-n type union is created within the molecule which is then directly polarized to create the recombination radiation. According to one embodiment of the present invention, a nanotube-based light-emitting device can be a two-terminal p-n device or a three-terminal device. With reference to Fig. 2, the two terminal p-n device comprising a source 104 and a drain 105 could be formed, wherein the nanotube 103 is chemically contaminated. The two-terminal device does not comprise a gate, and thus, a chemically contaminated nanotube can be implemented to produce a p-n junction. To generate light, a polarization voltage can be applied through the molecule 103, where a negative terminal is coupled to the n-type end of the molecule and a positive terminal is coupled to the p-type end of the molecule. The three terminal device comprising a source 104, a drain 9 105 and a .101 gate, and nanotube 103 may be chemically uncontaminated or chemically contaminated to increase field contamination. With reference to Fig. 3, a molecule 300 is placed which shows ambipolar behavior between drain 301 and source electrodes 302 in a field effect structure. The structure is then polarized with the value of the gate voltage between drain voltages 301 and source 302. The gate field allows the injection of holes in one end of the nanotube and thus behaves as contaminated p and alternately allows the injection of electrons at the other end of the nanotube and behaves well as n contaminated. Due to the opposite sign of the gate field at the ends of the molecule, one side of the molecule is p contaminated (h +) and the other side of the molecule is contaminated (e-). Since the contaminated p region is on the side that has the highest voltage, the p-n junction created in the molecule is directly polarized. In this way, a direct polarization p-n junction is created in a single molecule allowing recombination radiation (hv) to be created by the current. The recombination radiation occurs on the body of the nanotube in the region of the p and n regions as shown in Fig. 3. 10 A prototype lüz emitting device has been constructed using a carbon nanotube. This example uses the first modality described above. The prototype device comprises a simple carbon nanotube in a field effect structure. . { See, for example, Figs. 1A-B). This device showed ambipolar electrical conductivity. The voltages at the terminal of the device can be scaled with the thickness of the oxide. With a source voltage close to 0 (for example, +/- 1/2 volt), the drain voltage is twice the gate voltage. For example, optical emission of the device has been observed by grounding the source, fixing the gate to +5 volts, and polarizing to +10 V in the drain for a gate thickness of 100 nm. A charge density can be between 108 Amps / cm2 and 10 Amps / cm2, however this may vary with parameters and geometry of the device. A person with average knowledge in the art will appreciate it, considering the present description, that a voltage of operation of the device may depend on the parameters and the geometry of the device. For example, a thinner gate oxide involves a lower gate voltage operation. Near the source, the nanotube is contaminated due to field effect contamination. 11 With the opposite field in the nanotube near the drain, the nanotube is contaminated in this region. In Fig. 4, the drain current is plotted as a function of the drain voltage when it is swept from 0 to +10 volts with the damper voltage at +5 volts and the source to ground. ' Optical emission of the device is observed when operating in direct polarized junction mode. The emission is in the infrared, as expected from the small forbidden energy levels of the carbon nanotube. Since the forbidden energy levels of the 'semiconductor nanotube is scaled as 1 / d, where d is the diameter of the tube, the emission of the device can be adjusted within a range from infrared to visible light. With reference to Fig. 5, there is shown a method for generating light which comprises providing a field effect transistor comprising a source, a drain, a gate and a carbon nanotube channel having a diameter adapted to generate light of a desired wavelength 501. The gate can be polarized with a voltage of about plus 5 volts 502, while the carbon nanotube channel can be directly biased by applying a voltage of around more than 10 volts to draw 503. The recombination of a 12 electron and a gap generates light of the desired wavelength 504. Nanotubes can be used to generate light to a portion of a spectrum including infrared light and visible according to the diameter of the nanotube. An advantage of this device is to allow the electrically induced optical emission to be observed from a single molecule. Moreover, the carrier injection in this molecular device is highly efficient because the Schottky barrier is thin due to the one-dimensional electrostatic effects in the nanotubes, e. g., drilling speeds the filtering ratio in the contacts is quite high for contacts with Fermi level placed at half power level prohibited. The properties of the nanotube Schottky barriers in this one-dimensional system do not limit the current much and a high injection speed is obtained, which favors a higher efficiency for the emission. Therefore, this contact scheme does not need a specially designed contact with asymmetric injection as it is usually the case in photon sources. Having described preferred embodiments of a molecular scale device capable of electrically induced optical emission, it is noted that they can be performed 13 modifications and variations by people with average knowledge in the matter considering the previously described. It must therefore be understood that the changes can be made in the particular embodiments of the disclosed invention, which are within the scope and essence of the invention as defined by the appended claims. Having thus described the invention with the details and the particularity required by the patent law, it is claimed that it is protected by a patent document as established in the following claims. 14

Claims (26)

  1. CLAIMS 1. A light emitting device comprising: a gate electrode; a channel comprising a molecule for electrically stimulated light emission, wherein the molecule is placed within an effective range of the gate electrode; a source coupled to a first end of the channel that injects electrons into the channel; and a drain coupled to a second end of the channel that injects holes in the channel. 2. The device according to claim 1, characterized in that the molecule is one of a carbon nanotube and a boron-nitride nanotube. 3. The device according to claim 1, characterized in that the gate electrode is formed within a substrate. 4. The device according to claim 1, characterized in that the gate electrode is a substrate. 5. The device according to claim 1, characterized in that the molecule is substantially ambipolar. fifteen 6. The device according to claim 1, characterized in that the molecule is a carbon rectification nanotube. The device according to claim 1, characterized in that the molecule is one of a single-walled nanotube and a multiwall nanotube. 8. The device according to claim 1, characterized in that a charge density is around between 10d Amps / cm2 and 109 Amps / cm2. 9. The. device according to claim 1, characterized in that a drain voltage is approximately twice a gate voltage and the source is close to the ground potential. 10. The device according to claim 1, characterized in that the molecule is substantially uncontaminated. 11. The device according to claim 1, characterized in that the first end of the molecule is contaminated. The device according to claim 1, characterized in that the channel comprises a molecule arranged on the substrate for electrically stimulated optical emission. 16 13. The device according to claim 1, characterized in that the channel comprises at least two molecules arranged on the substrate for electrically stimulated optical emission. A method for generating light comprising the steps of: providing a field effect transistor comprising a source, a drain, a gate electrode and a channel comprising a molecule for light emission electrically stimulated, the molecule has a diameter adapted to generate light of a desired wavelength; polarize the gate electrode with a gate voltage; directly polarize the channel by applying a voltage between the source and the drain; and recombining an electron and a gap, where recombination generates light of the desired wavelength. 15. The method according to claim 14, characterized in that the channel is one of a carbon nanotube and a boron-nitride nanotube. The method according to claim 14, characterized in that the gate voltage and the voltage applied to the drain produce a charge density through the channel adapted to cause optical emission from the channel. 17 17. The method according to claim 14, characterized in that the light of the desired wavelength is in a portion of a spectrum that includes infrared light and visible light. 18. The method according to claim 14, characterized in that it further comprises the step of contaminating a first portion of the channel with contaminants n, wherein the first portion of the channel is close to the source. The method according to claim 14, characterized in that the channel comprises a molecule arranged on the substrate for electrically stimulated optical emission. The method according to claim 14, characterized in that the channel comprises at least two molecules arranged on the substrate for electrically stimulated optical emission. 21. A light emitting device comprising: a channel comprising a molecule for emission of electrically stimulated light, wherein the molecule comprises a n-type portion and a p-type portion forming a p-n-type junction within the molecule; a source attached to the p-type portion of the molecule that injects electrons into the molecule; Y 18 a drain coupled to the n-type portion of the molecule that injects holes in the molecule. 22. The device according to claim 21, characterized in that the molecule is one of a carbon nanotube and a boron-nitride nanotube. 23. The device according to claim 21, characterized in that the molecule is directly polarized. 24. The device according to claim 21, characterized in that the molecule is intrinsically p-type and one end of the molecule is chemically contaminated to form the n-type portion. 25. A method for generating light comprising the steps of: providing a two-terminal device comprising a source, a drain, and a channel comprising a molecule for light emission electrically stimulated, wherein the molecule includes a n-type portion and a p-type portion forming a pn-type junction within the molecule, wherein the molecule has a diameter adapted to generate light of a desired wavelength; directly polarizing the molecule by applying a voltage between the source and the drain, where the source is coupled to the p-type portion and the drain is coupled to the n-type portion; Y 19 recombine an electron and a hole, where recombination generates light of the desired wavelength. 26. The method according to claim 25, characterized in that the molecule is one of a carbon nanotube and a boron-nitride nanotube. twenty
MXPA05003154A 2002-09-26 2003-09-26 Molecular light emitting device. MXPA05003154A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/255,351 US7115916B2 (en) 2002-09-26 2002-09-26 System and method for molecular optical emission
PCT/US2003/030647 WO2004030043A2 (en) 2002-09-26 2003-09-26 Molecular light emitting device

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MXPA05003154A true MXPA05003154A (en) 2005-07-05

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US (1) US7115916B2 (en)
EP (1) EP1547165A4 (en)
JP (1) JP2006501654A (en)
KR (1) KR100646719B1 (en)
CN (1) CN1685528A (en)
AU (1) AU2003279724A1 (en)
IL (1) IL167667A (en)
MX (1) MXPA05003154A (en)
TW (1) TWI284912B (en)
WO (1) WO2004030043A2 (en)

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