CN102945905A - Visible light emitting diode based on boron carbon nitrogen nanometer tube - Google Patents
Visible light emitting diode based on boron carbon nitrogen nanometer tube Download PDFInfo
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- CN102945905A CN102945905A CN2012104924940A CN201210492494A CN102945905A CN 102945905 A CN102945905 A CN 102945905A CN 2012104924940 A CN2012104924940 A CN 2012104924940A CN 201210492494 A CN201210492494 A CN 201210492494A CN 102945905 A CN102945905 A CN 102945905A
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Abstract
The invention discloses a visible light emitting diode based on a boron carbon nitrogen nanometer tube. A boron-nitrogen-doped carbon nanometer tube is used as a lighting body, and the lighting body can emit light in a visible light wave band when forward bias is exerted on the lighting body. The boron-nitrogen-doped carbon nanometer tube is grown on an insulated substrate or transferred to the insulated substrate directly, and pn junctions are manufactured on the boron-nitrogen-doped carbon nanometer tube through asymmetric electrode technology or local area gate electrode technology. A pure semi-conductor characteristic of the boron-nitrogen-doped carbon nanometer tube solves the problem that pure carbon nanometer tubes are hard to be integrated due to the fact that metal tubes and semi-conductor tubes are mixed together. The visible light emitting diode can be highly integrated and is based on a one-dimensional nanometer structure.
Description
Technical field
The present invention relates to visible light emitting diode, particularly based on the visible light emitting diode of carbon nano-tube material.
Background technology
Carbon nano-tube is a kind of monodimension nanometer material, has very high mechanical strength, high electron mobility, and well thermal stability and chemical stability are the core materials that has the micro-nano device of future generation of hope.The carbon nano-tube of semiconductive is the direct band gap material, can be used for luminescent device and light-detecting device.But be based on pure nano-carbon tube and make two larger problems of photoelectric device existence.First: carbon nano-tube is the helical structure that metallicity or semiconductive depend on concrete every pipe, and directly synthetic carbon nano-tube sample all is mixtures of metallicity and semiconductive pipe.And metallic carbon nano-tube can not be used for making photoelectric device, and this is to bringing great difficulty based on the micro-nano device of carbon nano-tube integrated.Second: the band gap of semiconductive carbon nano tube is less, and experimentally the synthetic carbon nano-tube band gap of success all is in infrared band.Can't be applied to make the device of visible light wave range.
Summary of the invention
Be applied to the problem that luminescent device exists for pure nano-carbon tube, the object of the present invention is to provide a kind of visible light emitting diode based on boron-carbon nanotube that obtains high integrated level.
For achieving the above object, the present invention is based on the visible light emitting diode of boron-carbon nanotube, take the boron nitrogen-doped carbon nanometer pipe as luminous element, when it was applied forward bias, luminous element was luminous at visible light wave range; Wherein, the boron nitrogen-doped carbon nanometer pipe is grown directly upon dielectric substrate or transfers on the dielectric substrate, uses asymmetric electrode technology or local gate electrode technology to make the pn knot at the boron nitrogen-doped carbon nanometer pipe.
Further, when using the asymmetric electrode technology, select palladium scandium electrode pair or palladium yttrium electrode pair, wherein form p-type between palladium electrode and the nanotube and contact, the formation N-shaped contacts between scandium or yttrium electrode and the nanotube.
Further, when using local gate electrode technology, the source-drain electrode metal is selected titanium or aluminium, above source-drain electrode and the nanotube contact area or below making local gate electrode.
Further, the interior described boron nitrogen-doped carbon nanometer pipe as luminous element of device is single or many parallel arrays or many unordered random conductive networks.
Further, described boron nitrogen-doped carbon nanometer pipe is single-walled nanotube or many walls nanotube.
Further, the described boron nitrogen-doped carbon nanometer pipe length between two electrodes is regulated arbitrarily between tens nanometers to tens micron.
The characteristic of boron nitrogen-doped carbon nanometer pipe pure semiconductor has solved pure nano-carbon tube because metallic tubes and semiconductive pipe are mixed in together and has been difficult to integrated difficulty, and the present invention has realized a kind of nano luminescent device based on the visible light wave range of one-dimensional nano structure that can be highly integrated.
Description of drawings
Fig. 1 is single nanotube light-emitting diode asymmetric electrode device architecture schematic diagram;
Fig. 2 is many nanotube parallel array asymmetric electrode device architecture schematic diagrames;
Fig. 3 is the random conductive network asymmetric electrode of nanotube device architecture schematic diagram;
Fig. 4 is the light emitting diode (LED) light microphotograph of the nitrogen co-doped carbon nano-tube of boron of an actual fabrication;
Fig. 5 is the nitrogen co-doped carbon nano-tube light-emitting diode with scanning of boron electron micrograph shown in Figure 4;
Fig. 6 is the voltage-current curve of Fig. 4 and the nitrogen co-doped carbon nano-tube light-emitting diode of boron shown in Figure 5;
Fig. 7 is the emission spectrum of Fig. 4 and the nitrogen co-doped carbon nano-tube light-emitting diode of boron shown in Figure 5.
Embodiment
Below, with reference to the accompanying drawings, the present invention is more fully illustrated, shown in the drawings of exemplary embodiment of the present invention.Yet the present invention can be presented as multiple multi-form, and should not be construed as the exemplary embodiment that is confined to narrate here.But, these embodiment are provided, thereby make the present invention comprehensively with complete, and scope of the present invention is fully conveyed to those of ordinary skill in the art.
The present invention is based on the visible light emitting diode of boron-carbon nanotube, take the boron nitrogen-doped carbon nanometer pipe as luminous element, when it is applied forward bias, luminous element is luminous at visible light wave range, boron nitrogen-doped carbon nanometer pipe diameter can be little of 1 nanometer, make light-emitting diode with this monodimension nanometer material, can obtain high integrated level, or be applied to micro/nano-scale electro-optical system on the sheet.
The first step of making based on the light-emitting diode of the nitrogen co-doped carbon nano-tube of boron is that the nanotube sample that perhaps will synthesize is transferred to (transfer method) on the dielectric substrate with nanotube growth (direct growth method) on dielectric substrate.The growth in thickness method uses the surface that the monocrystalline silicon substrate of silicon dioxide layer is arranged usually, is needing the regional spreading catalyst of nanotube, then uses method direct growth nano-tube array or nanotube random network on silicon dioxide layer of chemical vapour deposition (CVD).Transfer method is that the nanotube that will be grown in other substrates utilizes the nano material transfer techniques to transfer on the element manufacturing substrate, perhaps nanotube is distributed in the volatile solution, then is applied on the element manufacturing substrate.
Need to make the pn knot on the nanotube.Can use and in pure nano-carbon tube, study ripe asymmetric electrode technology or local gate electrode technology.
When using the asymmetric electrode technology, with electron beam lithography or optical lithography techniques, make in two steps Metal Palladium electrode and metal scandium electrode, perhaps Metal Palladium electrode and metallic yttrium electrode.The Metal Palladium electrode contacts with nanotube interface formation p-type, when voltage adds by palladium electrode to nanotube injected hole charge carrier.Metal scandium (perhaps metallic yttrium) contacts with nanotube interface formation N-shaped, injects electronic carrier to nanotube when voltage adds.Palladium electrode and scandium electrode (perhaps yttrium electrode) form the pn knot at nanotube like this.When voltage was positive bias, two electrodes respectively injected holes and electronics were compound on nanotube, produce visible light luminous.
Also can use the method for local gate electrode commonly used in the pure nano-carbon tube nano-device in the method for nanotube making pn knot.Namely at first make source electrode and the drain electrode of same material at nanotube, available titanium electrode or aluminum metal.Then cover the contact area of nanotube and metal electrode with the insulating material of high-dielectric coefficient, the place over against nanotube and metal electrode contact area makes two local gate electrodes on this insulating barrier subsequently.When the local gate electrode added positive voltage, the metal electrode of this gate electrode below was to nanotube injected hole charge carrier; When the local gate electrode added negative voltage, the metal electrode of this gate electrode below injected electronic carrier to nanotube.Two local gate electrodes, one adds positive voltage, and one adds negative voltage, realizes the respectively injection of hole and electronics, reaches the effect that forms the pn knot at nanotube.
Requirement according to device size requirement and luminosity, the boron nitrogen-doped carbon nanometer pipe that uses in a LED device can be single or many parallel arrays or many unordered random conductive networks, can use single-walled nanotube or use many walls nanotube.The length of nanotube channel can be regulated arbitrarily between tens nanometers to tens micron.
The asymmetric electrode device architecture of palladium electrode scandium electrode is compared local gate electrode device architecture, manufacturing process steps is less, individual devices size less, can obtain higher make efficiency and device integrated level, be the preferred structure of the luminous diode device structure of the nitrogen co-doped carbon nano-tube of this boron.
Fig. 1 is single boron nitrogen-doped carbon nanometer pipe luminous diode device structure schematic diagram.Nanotube sample 4 is dispersed on the dielectric substrate 1, and the little machined metal electrodes manufacture craft of Application standard (comprising the processing steps such as photoetching, metal deposition, metal-stripping) is made respectively palladium electrode 2 and scandium electrode (perhaps yttrium electrode) 3 at single nanotube sample two ends.Palladium electrode 2 forms p-type with nanotube and contacts, and scandium electrode (perhaps yttrium electrode) 3 forms N-shaped with nanotube and contact.Therefore consist of based on the pn of single boron nitrogen-doped carbon nanometer pipe knot, add that the forward bias nanotube can launch visible light for this pn knot.As shown in Figure 2, also can be directly on dielectric substrate 1 with chemical gaseous phase depositing process growth parallel nanotubes array 5, make palladium electrode and scandium electrode (perhaps yttrium electrode) at nano-tube array.Be connected with many nanotubes between a pair of palladium scandium (yttrium) electrode.Perhaps as shown in Figure 3, growth or transfer nanotube form nanotube conduction random network 6, make palladium scandium (yttrium) electrode pair thereon.The nanotube that participates in conduction in device is more, and its device operation current is also larger, and luminous intensity is also larger.
Fig. 4 has shown the light emitting diode (LED) light microphotograph of a nitrogen co-doped carbon nano-tube of boron of making, and this device uses palladium scandium asymmetric electrode technology.The scandium electrode presents different colors from palladium electrode under the light microscope.Fig. 5 has shown light-emitting diode with scanning electron micrograph shown in Figure 4.Can see parallel nanotubes arrays of conductive passage is arranged between the palladium scandium electrode pair.Fig. 6 is the voltage-current curve of Fig. 4 and light-emitting diode shown in Figure 5, and device shows the unilateral conduction of typical of diodes.Fig. 7 is for to add forward bias to this device, and detects the emission spectrum of this device with spectrometer.Emission spectrum when having shown respectively bias voltage Vb=2V and bias voltage Vb=5V among the figure, bias voltage is larger, and glow peak intensity is larger.
Claims (6)
1. based on the visible light emitting diode of boron-carbon nanotube, it is characterized in that, this visible light emitting diode is take the boron nitrogen-doped carbon nanometer pipe as luminous element, and when it was applied forward bias, luminous element was luminous at visible light wave range; Wherein, the boron nitrogen-doped carbon nanometer pipe is grown directly upon dielectric substrate or transfers on the dielectric substrate, uses asymmetric electrode technology or local gate electrode technology to make the pn knot at the boron nitrogen-doped carbon nanometer pipe.
2. the visible light emitting diode based on boron-carbon nanotube as claimed in claim 1, it is characterized in that, when using the asymmetric electrode technology, select palladium scandium electrode pair or palladium yttrium electrode pair, wherein form p-type between palladium electrode and the nanotube and contact, the formation N-shaped contacts between scandium or yttrium electrode and the nanotube.
3. the visible light emitting diode based on boron-carbon nanotube as claimed in claim 1, it is characterized in that, when using local gate electrode technology, the source-drain electrode metal is selected titanium or aluminium, above source-drain electrode and the nanotube contact area or below making local gate electrode.
4. the visible light emitting diode based on boron-carbon nanotube as claimed in claim 1, it is characterized in that, the interior described boron nitrogen-doped carbon nanometer pipe as luminous element of device is single or many parallel arrays or many unordered random conductive networks.
5. the visible light emitting diode based on boron-carbon nanotube as claimed in claim 1 is characterized in that, described boron nitrogen-doped carbon nanometer pipe is single-walled nanotube or many walls nanotube.
6. the visible light emitting diode based on boron-carbon nanotube as claimed in claim 1 is characterized in that, the described boron nitrogen-doped carbon nanometer pipe length between two electrodes is regulated arbitrarily between tens nanometers to tens micron.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018215892A1 (en) * | 2017-05-23 | 2018-11-29 | International Business Machines Corporation | Semiconductor device |
| CN111537578A (en) * | 2020-04-20 | 2020-08-14 | 兰州大学 | Electrochemical sensor material for detecting L-cysteine and preparation method thereof |
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| US20040061422A1 (en) * | 2002-09-26 | 2004-04-01 | International Business Machines Corporation | System and method for molecular optical emission |
| CN101281933A (en) * | 2008-04-29 | 2008-10-08 | 北京大学 | Photoelectric device based on carbon nano-tube, optoelectronic integrated circuit unit and circuit |
| CN101450799A (en) * | 2007-11-29 | 2009-06-10 | 索尼株式会社 | Nitrogen doped carbon nanotube and preparation method thereof, and carbon nanotube element |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040061422A1 (en) * | 2002-09-26 | 2004-04-01 | International Business Machines Corporation | System and method for molecular optical emission |
| CN101450799A (en) * | 2007-11-29 | 2009-06-10 | 索尼株式会社 | Nitrogen doped carbon nanotube and preparation method thereof, and carbon nanotube element |
| CN101281933A (en) * | 2008-04-29 | 2008-10-08 | 北京大学 | Photoelectric device based on carbon nano-tube, optoelectronic integrated circuit unit and circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018215892A1 (en) * | 2017-05-23 | 2018-11-29 | International Business Machines Corporation | Semiconductor device |
| GB2577208A (en) * | 2017-05-23 | 2020-03-18 | Ibm | Semiconductor device |
| CN111537578A (en) * | 2020-04-20 | 2020-08-14 | 兰州大学 | Electrochemical sensor material for detecting L-cysteine and preparation method thereof |
| CN111537578B (en) * | 2020-04-20 | 2022-12-13 | 兰州大学 | Electrochemical sensor material for detecting L-cysteine and preparation method thereof |
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Application publication date: 20130227 |