MX2009007270A - Sistema y metodo para utilizar la refraccion de portador de carga balistica equilibrado previamente. - Google Patents
Sistema y metodo para utilizar la refraccion de portador de carga balistica equilibrado previamente.Info
- Publication number
- MX2009007270A MX2009007270A MX2009007270A MX2009007270A MX2009007270A MX 2009007270 A MX2009007270 A MX 2009007270A MX 2009007270 A MX2009007270 A MX 2009007270A MX 2009007270 A MX2009007270 A MX 2009007270A MX 2009007270 A MX2009007270 A MX 2009007270A
- Authority
- MX
- Mexico
- Prior art keywords
- charge carrier
- solid
- effective mass
- state
- state electric
- Prior art date
Links
- 239000002800 charge carrier Substances 0.000 title abstract 6
- 239000000463 material Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Hybrid Cells (AREA)
Abstract
Un método y sistema para utilizar un método de portador de refracción de carga balística equilibrados previamente comprende fabricar uno o más generadores eléctricos de estado sólido; los generadores eléctricos de estado sólido incluyen uno o más generadores eléctricos de estado sólido energizados en forma química y un generador eléctrico de estado sólido termiónico; un primer material que tiene un primer portador de carga de masa efectiva se utiliza como una unión de estado sólido; un segundo material que tiene un segundo portador de carga de masa efectiva mayor que el primer portador de carga de masa efectiva se utiliza en la unión de estado sólido; la proporción de masa efectiva del portador de carga entre la segunda masa efectiva y la primera masa efectiva es mayor que o igual a dos.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88374807P | 2007-01-05 | 2007-01-05 | |
US11/762,864 US7663053B2 (en) | 2007-01-05 | 2007-06-14 | System and method for using pre-equilibrium ballistic charge carrier refraction |
PCT/US2007/088972 WO2008085757A2 (en) | 2007-01-05 | 2007-12-27 | A system and method for using pre-equilibrium ballistic charge carrier refraction |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2009007270A true MX2009007270A (es) | 2009-09-04 |
Family
ID=39593488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2009007270A MX2009007270A (es) | 2007-01-05 | 2007-12-27 | Sistema y metodo para utilizar la refraccion de portador de carga balistica equilibrado previamente. |
Country Status (9)
Country | Link |
---|---|
US (3) | US7663053B2 (es) |
EP (2) | EP2624301B1 (es) |
JP (2) | JP5437076B2 (es) |
KR (2) | KR101461839B1 (es) |
CN (2) | CN103500791B (es) |
BR (1) | BRPI0720751B1 (es) |
CA (1) | CA2674337C (es) |
MX (1) | MX2009007270A (es) |
WO (1) | WO2008085757A2 (es) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160211435A9 (en) | 2007-01-05 | 2016-07-21 | Neokismet, Llc | System and Method for Using Pre-Equilibrium Ballistic Charge Carrier Refraction |
US8828325B2 (en) * | 2007-08-31 | 2014-09-09 | Caterpillar Inc. | Exhaust system having catalytically active particulate filter |
US20090194741A1 (en) * | 2008-01-31 | 2009-08-06 | Caterpillar Inc. | Exhaust system having a carbon oxide catalyst |
AU2014232443B2 (en) * | 2013-03-15 | 2018-08-30 | Edward J. Britt | Energy conversion device and method for making and using same |
EP3896764A1 (en) * | 2013-10-29 | 2021-10-20 | Quswami, Inc. | Pre-equilibrium system and method using solid-state devices as energy converters using nano-engineered porous network materials |
US10291156B2 (en) | 2015-10-30 | 2019-05-14 | Ge Aviation Systems Llc | Combined hybrid thermionic and thermoelectric generator |
US10109781B1 (en) * | 2017-04-10 | 2018-10-23 | Face International Corporation | Methods for fabrication, manufacture and production of an autonomous electrical power source |
US10271129B2 (en) * | 2017-03-20 | 2019-04-23 | Bose Corporation | Acoustic device having an electro-acoustic transducer mounted to a passive radiator diaphragm |
US10841989B2 (en) * | 2018-08-22 | 2020-11-17 | Inovl, Inc. | Gaseous-phase ionizing radiation generator |
JP2023524283A (ja) | 2020-05-06 | 2023-06-09 | スパーク サーミオニックス,インコーポレイテッド | 熱電子エネルギー変換システムおよび方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5955772A (en) * | 1996-12-17 | 1999-09-21 | The Regents Of The University Of California | Heterostructure thermionic coolers |
JP3186659B2 (ja) * | 1997-09-03 | 2001-07-11 | ダイキン工業株式会社 | 熱電変換材料の製造方法および熱電変換材料 |
US6121539A (en) * | 1998-08-27 | 2000-09-19 | International Business Machines Corporation | Thermoelectric devices and methods for making the same |
EP1131842A2 (en) * | 1998-11-20 | 2001-09-12 | The Regents Of The University Of California | High-efficiency heterostructure thermionic coolers |
US7109408B2 (en) * | 1999-03-11 | 2006-09-19 | Eneco, Inc. | Solid state energy converter |
US6396191B1 (en) * | 1999-03-11 | 2002-05-28 | Eneco, Inc. | Thermal diode for energy conversion |
US6114620A (en) * | 1999-05-04 | 2000-09-05 | Neokismet, L.L.C. | Pre-equilibrium chemical reaction energy converter |
US7371962B2 (en) * | 1999-05-04 | 2008-05-13 | Neokismet, Llc | Diode energy converter for chemical kinetic electron energy transfer |
US7223914B2 (en) * | 1999-05-04 | 2007-05-29 | Neokismet Llc | Pulsed electron jump generator |
US6649823B2 (en) * | 1999-05-04 | 2003-11-18 | Neokismet, L.L.C. | Gas specie electron-jump chemical energy converter |
US6916451B1 (en) * | 1999-05-04 | 2005-07-12 | Neokismet, L.L.C. | Solid state surface catalysis reactor |
IL149220A0 (en) * | 1999-10-20 | 2002-11-10 | Neokismet Llc | Solid state surface catalysis reactor |
US6903433B1 (en) * | 2000-01-19 | 2005-06-07 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
RU2275713C2 (ru) * | 2000-06-22 | 2006-04-27 | Инеко, Инк. | Термоэлектрический преобразователь и способ преобразования тепловой энергии |
AU2002236994A1 (en) * | 2001-01-17 | 2002-07-30 | Neokismet, L.L.C. | Electron-jump chemical energy converter |
US6774300B2 (en) * | 2001-04-27 | 2004-08-10 | Adrena, Inc. | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure |
WO2002091479A1 (en) * | 2001-05-10 | 2002-11-14 | Neokismet L.L.C. | Gas specie electron-jump chemical energy converter |
US7122735B2 (en) * | 2001-06-29 | 2006-10-17 | Neokismet, L.L.C. | Quantum well energizing method and apparatus |
AU2004220800B2 (en) * | 2003-03-13 | 2009-06-11 | Micropower Global Limited | Solid state energy converter |
-
2007
- 2007-06-14 US US11/762,864 patent/US7663053B2/en active Active
- 2007-12-27 KR KR1020137009064A patent/KR101461839B1/ko not_active IP Right Cessation
- 2007-12-27 CN CN201310287471.0A patent/CN103500791B/zh not_active Expired - Fee Related
- 2007-12-27 CN CN2007800492945A patent/CN101622726B/zh not_active Expired - Fee Related
- 2007-12-27 WO PCT/US2007/088972 patent/WO2008085757A2/en active Application Filing
- 2007-12-27 BR BRPI0720751A patent/BRPI0720751B1/pt not_active IP Right Cessation
- 2007-12-27 MX MX2009007270A patent/MX2009007270A/es active IP Right Grant
- 2007-12-27 CA CA2674337A patent/CA2674337C/en not_active Expired - Fee Related
- 2007-12-27 EP EP13157846.0A patent/EP2624301B1/en not_active Not-in-force
- 2007-12-27 EP EP07869983.2A patent/EP2108197B1/en not_active Not-in-force
- 2007-12-27 KR KR1020097016315A patent/KR101461691B1/ko active IP Right Grant
- 2007-12-27 JP JP2009544897A patent/JP5437076B2/ja not_active Expired - Fee Related
-
2009
- 2009-12-31 US US12/650,841 patent/US8378207B2/en active Active
-
2012
- 2012-02-15 US US13/397,618 patent/US8829325B2/en active Active
-
2013
- 2013-12-11 JP JP2013256148A patent/JP5816252B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2674337A1 (en) | 2008-07-17 |
US8378207B2 (en) | 2013-02-19 |
US7663053B2 (en) | 2010-02-16 |
US8829325B2 (en) | 2014-09-09 |
EP2108197A2 (en) | 2009-10-14 |
CN103500791B (zh) | 2016-12-28 |
US20120160289A1 (en) | 2012-06-28 |
JP5437076B2 (ja) | 2014-03-12 |
US20100132754A1 (en) | 2010-06-03 |
BRPI0720751A2 (pt) | 2014-01-14 |
KR20130056324A (ko) | 2013-05-29 |
BRPI0720751B1 (pt) | 2019-09-03 |
KR20090113843A (ko) | 2009-11-02 |
JP5816252B2 (ja) | 2015-11-18 |
EP2624301A2 (en) | 2013-08-07 |
CN101622726A (zh) | 2010-01-06 |
US20080164459A1 (en) | 2008-07-10 |
CN103500791A (zh) | 2014-01-08 |
WO2008085757A3 (en) | 2008-11-06 |
CN101622726B (zh) | 2013-10-30 |
EP2624301A3 (en) | 2014-04-30 |
EP2108197A4 (en) | 2012-03-07 |
EP2108197B1 (en) | 2015-05-27 |
EP2624301B1 (en) | 2016-11-09 |
CA2674337C (en) | 2017-01-10 |
JP2010516046A (ja) | 2010-05-13 |
WO2008085757A2 (en) | 2008-07-17 |
JP2014116606A (ja) | 2014-06-26 |
KR101461691B1 (ko) | 2014-11-13 |
KR101461839B1 (ko) | 2014-11-13 |
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